Yizhen Lin

age ~52

from Cohoes, NY

Also known as:
  • Yi Zhen Lin
  • Yighen Lin
  • Lin Yizhen
  • Linyi Zhen
  • N Lin
Phone and address:
9 Dutch Meadows Dr, Dunsbach Ferry, NY 12047

Yizhen Lin Phones & Addresses

  • 9 Dutch Meadows Dr, Cohoes, NY 12047
  • Fishers, IN
  • Niskayuna, NY
  • 658 Poplar Ct, Chandler, AZ 85226
  • 1038 S Oak St, Gilbert, AZ 85233
  • San Jose, CA
  • Washington, DC
  • Hyattsville, MD
  • Maricopa, AZ
  • Holly Springs, GA

Resumes

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Yizhen Lin

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Location:
United States
Yizhen Lin Photo 2

Yizhen Lin

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Name / Title
Company / Classification
Phones & Addresses
Yizhen Lin
THE BEIRC FOUNDATION

Us Patents

  • Differential Capacitive Sensor And Method Of Making Same

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  • US Patent:
    7610809, Nov 3, 2009
  • Filed:
    Jan 18, 2007
  • Appl. No.:
    11/655557
  • Inventors:
    Andrew C. McNeil - Chandler AZ, US
    Yizhen Lin - Gilbert AZ, US
    Todd F. Miller - Scottsdale AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    G01P 15/125
  • US Classification:
    7351432
  • Abstract:
    A differential capacitive sensor () includes a movable element () pivotable about a rotational axis (). The movable element () includes first and second sections (). The first section () has an extended portion () distal from the rotational axis (). A static layer () is spaced away from a first surface () of the moveable element (), and includes a first actuation electrode (), a first sensing electrode (), and a third sensing electrode (). A static layer () is spaced away from a second surface () of the moveable element () and includes a second actuation electrode (), a second sensing electrode (), and a fourth sensing electrode (). The first and second electrodes () oppose the first section (), the third and fourth electrodes () oppose the second section (), and the first and second electrodes () oppose the extended portion ().
  • Transducer With Decoupled Sensing In Mutually Orthogonal Directions

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  • US Patent:
    8020443, Sep 20, 2011
  • Filed:
    Oct 30, 2008
  • Appl. No.:
    12/262042
  • Inventors:
    Yizhen Lin - Gilbert AZ, US
    Andrew C. McNeil - Chandler AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    G01P 15/125
  • US Classification:
    7351432
  • Abstract:
    A microelectromechanical systems (MEMS) transducer () is adapted to sense acceleration in mutually orthogonal directions (). The MEMS transducer () includes a proof mass () suspended above a substrate () by an anchor system (). The anchor system () pivotally couples the proof mass () to the substrate () at a rotational axis () to enable the proof mass () to rotate about the rotational axis () in response to acceleration in a direction (). The proof mass () has an opening () extending through it. Another proof mass () resides in the opening (), and another anchor system () suspends the proof mass () above the surface () of the substrate (). The anchor system () enables the proof mass () to move substantially parallel to the surface () of the substrate () in response to acceleration in at least another direction ().
  • Capacitive Sensor With Stress Relief That Compensates For Package Stress

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  • US Patent:
    8096182, Jan 17, 2012
  • Filed:
    May 29, 2008
  • Appl. No.:
    12/129548
  • Inventors:
    Yizhen Lin - Gilbert AZ, US
    Andrew C. McNeil - Chandler AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    G01P 15/125
  • US Classification:
    7351432, 295921
  • Abstract:
    A microelectromechanical systems (MEMS) capacitive sensor () includes a movable element () pivotable about a rotational axis () offset between ends () thereof. A static conductive layer () is spaced away from the movable element () and includes electrode elements (). The movable element () includes a section () between the rotational axis () and one end () that exhibits a length (). The movable element () further includes a section () between the rotational axis () and the other end () that exhibits a length () that is less than the length () of the section (). The section () includes slots () extending through movable element () from the end () toward the rotational axis (). The slots () provide stress relief in section () that compensates for package stress to improve sensor performance.
  • Accelerometer With Over-Travel Stop Structure

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  • US Patent:
    8186220, May 29, 2012
  • Filed:
    Mar 9, 2009
  • Appl. No.:
    12/400441
  • Inventors:
    Aaron A. Geisberger - Phoenix AZ, US
    Yizhen Lin - Gilbert AZ, US
    Andrew C. McNeil - Chandler AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    G01P 15/125
  • US Classification:
    7351432, 7351438
  • Abstract:
    An accelerometer () includes a substrate () and a proof mass () spaced apart from a surface () of the substrate (). Compliant members () are coupled to the proof mass () and enable the proof mass () to move parallel to the surface () of the substrate () in a sense direction (). Proof mass anchors () interconnect the compliant members () with the surface (). The accelerometer () includes an over-travel stop structure () having stop anchors () coupled to the substrate (). The stop anchors () are coupled to the substrate () at positions () on the surface () residing at least partially within an anchor attach area () bounded in the sense direction () by locations () of the proof mass anchors () on the surface ().
  • Vertically Integrated Mems Acceleration Transducer

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  • US Patent:
    8186221, May 29, 2012
  • Filed:
    Mar 24, 2009
  • Appl. No.:
    12/409920
  • Inventors:
    Yizhen Lin - Gilbert AZ, US
    Todd F. Miller - Scottsdale AZ, US
    Woo Tae Park - Chandler AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    G01P 15/125
    G01P 3/04
    G01P 1/02
  • US Classification:
    7351432, 73510, 73493
  • Abstract:
    A transducer () includes sensors () that are bonded to form a vertically integrated configuration. The sensor () includes a proof mass () movably coupled to and spaced apart from a surface () of a substrate (). The sensor () includes a proof mass () movably coupled to and spaced apart from a surface () of a substrate (). The substrates () are coupled with the surface () of substrate () facing the surface () of substrate (). Thus, the proof mass () faces the proof mass (). The sensors () are fabricated separately and can be formed utilizing differing micromachining techniques. The sensors () are subsequently coupled () utilizing a wafer bonding technique to form the transducer (). Embodiments of the transducer () may include sensing along one, two, or three orthogonal axes and may be adapted to detect movement at different acceleration sensing ranges.
  • Method Of Producing A Microelectromechanical (Mems) Sensor Device

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  • US Patent:
    8216882, Jul 10, 2012
  • Filed:
    Aug 23, 2010
  • Appl. No.:
    12/861509
  • Inventors:
    Yizhen Lin - Gilbert AZ, US
    Woo Tae Park - Singapore, SG
    Mark E. Schlarmann - Chandler AZ, US
    Hemant D. Desai - Gilbert AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    H01L 21/44
    H01L 21/48
    H01L 21/50
  • US Classification:
    438113, 438114, 257E29001
  • Abstract:
    A device () includes sensors () that sense different physical stimuli. A pressure sensor () includes a reference element () and a sense element (), and an inertial sensor () includes a movable element (). Fabrication () entails forming () a first substrate structure () having a cavity (), forming a second substrate structure () to include the sensors (), and coupling () the substrate structures so that the first sensor () is aligned with the cavity () and the second sensor () is laterally spaced apart from the first sensor (). Forming the second structure () includes forming () the sense element () from a material layer () of the second structure () and following coupling () of the substrate structures, concurrently forming () the reference element () and the movable element () in a wafer substrate () of the second structure ().
  • Vertically Integrated Mems Sensor Device With Multi-Stimulus Sensing

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  • US Patent:
    8220330, Jul 17, 2012
  • Filed:
    Oct 30, 2009
  • Appl. No.:
    12/609332
  • Inventors:
    Todd F. Miller - Scottsdale AZ, US
    Yizhen Lin - Gilbert AZ, US
    David J. Monk - Mesa AZ, US
    Woo Tae Park - Chandler AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    G01P 15/125
    G01P 3/04
    G01P 1/02
  • US Classification:
    7351432, 73510, 73493
  • Abstract:
    A microelectromechanical systems (MEMS) sensor device () includes a sensor portion () and a sensor portion () that are coupled together to form a vertically integrated configuration having a hermetically sealed chamber (). The sensor portions () can be formed utilizing different micromachining techniques, and are subsequently coupled utilizing a wafer bonding technique to form the sensor device (). The sensor portion () includes one or more sensors (), and the sensor portion () includes one or more sensors (). The sensors () are located inside the chamber () facing the sensors () also located inside the chamber (). The sensors () are configured to sense different physical stimuli, such as motion, pressure, and magnetic field.
  • Mems Device Assembly And Method Of Packaging Same

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  • US Patent:
    8304275, Nov 6, 2012
  • Filed:
    Aug 31, 2010
  • Appl. No.:
    12/873195
  • Inventors:
    Mark E. Schlarmann - Chandler AZ, US
    Yizhen Lin - Gilbert AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    H01L 29/96
  • US Classification:
    438 52, 438 51, 257415, 257E29324, 7351416
  • Abstract:
    A MEMS device assembly () includes a MEMS die () and an integrated circuit (IC) die (). The MEMS die () includes a MEMS device () formed on a substrate () and a cap layer (). A packaging process () entails forming the MEMS device () on the substrate () and removing a material portion of the substrate () surrounding the device () to form a cantilevered substrate platform () at which the MEMS device () resides. The cap layer () is coupled to the substrate () overlying the MEMS device (). The MEMS die () is electrically interconnected with the IC die (). Molding compound () is applied to substantially encapsulate the MEMS die (), the IC die (), and interconnects () that electrically interconnect the MEMS device () with the IC die (). The cap layer () prevents the molding compound () from contacting the MEMS device ().

Googleplus

Yizhen Lin Photo 3

Yizhen Lin

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Facebook

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Yizhen Lin

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Friends:
Carol Wong, Tam Jessie, Man Hei Man, Sharon Yao, Chan Wai Nam
Yizhen Lin Photo 6

Yizhen Lin

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Friends:
Hou Man Wong, Johnson Tong, Gloria Chuang, SaSa Lin
Yizhen Lin Photo 7

Lin Yizhen

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Friends:
Gustavo Rocque, Jen Hui, Cherie Eng Hui Xuan, Nicia Tee, Benson Lim Lim
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Charmaine Lin Yizhen

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Yizhen Lin Yizhen

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Mylife

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Yizhen Lin Chandler AZ

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Other Social Networks

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Yizhen Lin

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Network:
Friendster
Friendster: ; location: Indonesia, ID; Selatpanjang; PT. SIm Metal Batam.

Youtube

[EN SUB] 20210627 Lin Nansheng & Zhu Yizhe...

Cr: Weibo CCTV8 Please DO NOT reupload the video or subtitles. ... #.....

  • Duration:
    1m 32s

[EN SUB] 20210626 Lin Nansheng & Zhu Yizhe...

Cr: Weibo CCTV8 Please DO NOT reupload the video or subtitles. ... #.....

  • Duration:
    1m 44s

[EN SUB] 20210608 Lin Nansheng, Zhu Yizhen ...

Cr: Weibo CCTV Please DO NOT reupload the video or subtitles. ... ...

  • Duration:
    1m 54s

Sun Yingsha vs Sun Yizhen | 2021 Chinese WTT ...

Groups stage. #tabletennis #pingpong With 36 men's and women's singles...

  • Duration:
    6m 13s

Chen Meng/Sun Yizhen vs Chen Xingtong/Qian Ti...

Shenzhen University vs Shandong Luneng | Match1 #tabletennis #pingpong...

  • Duration:
    7m 9s

The Rebel 2021- Mv - Zhu Yi long and Tong Ya...

The Rebel 2021, it's amazing Drama, I finally made this video and soon...

  • Duration:
    3m 28s

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