Yong Chen
age ~59
from Lexington, MA
Yong Chen Phones & Addresses
- Lexington, MA
- Cupertino, CA
- Santa Clara, CA
Lawyers & Attorneys
Yong Chen - Lawyer
view sourceAddress:
Shanghai Guohe Capital
2128931938 (Office)
2128931938 (Office)
Licenses:
New York - Currently registered 2009
Education:
Columbia Law School
Amazon
The Wenchuan Earthquake of 2008: Anatomy of a Disaster
view source"The Wenchuan Earthquake of 2008: Anatomy of a Disaster" gives a detailed account of the damage, seismology and tectonics of the event and discusses earthquake prediction, seismic hazard and risk management, the creation and implementation of building codes, and new practices used in rescue, relief ...
Author
Yong Chen, David C. Booth
Binding
Hardcover
Pages
280
Publisher
Springer
ISBN #
3642211585
EAN Code
9783642211584
ISBN #
6
Chen Yongkeng - Selection of Chinese Modern Masters Works (Chinese Edition)
view sourceAuthor
Chen Yong Qiang
Binding
Paperback
Pages
56
Publisher
Peoples Fine Arts Publishing House
ISBN #
7102042442
EAN Code
9787102042442
ISBN #
9
Introduction guide [paperback]
view sourceAuthor
CHEN YONG FA
Binding
Paperback
Publisher
Unknown
ISBN #
7542612476
EAN Code
9787542612472
ISBN #
5
Additions and Corrections of the Chronic of Li Taibais Life (Chinese Edition)
view sourceAuthor
lv hua ming. chen an yong. liu jin ping. zhu
Binding
Paperback
Pages
199
Publisher
Zhonghua Book Company
ISBN #
7101074529
EAN Code
9787101074529
ISBN #
4
Swimming with Sharks (Trophy Chapter Books)
view sourceNo TV, no friends, and a grandfather struggling with retirement from marine biology--Sarah's sure her stay in the Florida Keys will be the most boring summer of her life.That is, until she begins to take notice of the unusual-looking fish that visits her grandparents' dock every day. When Sarah disc...
Author
Twig C. George
Binding
Paperback
Pages
128
Publisher
HarperCollins
ISBN #
0060277572
EAN Code
9780060277574
ISBN #
10
A Gift
view sourceA gift has come for Amy, all the way from China. The package has arrived just in time for Chinese New Year, the most important holiday in the Chinese culture. At this time of year, it's tradition to spend time with friends and family. Since Amy's aunt and uncles live China, and are unable to make a ...
Author
Yong Chen
Binding
Hardcover
Pages
32
Publisher
Boyds Mills Pr
ISBN #
1590786106
EAN Code
9781590786109
ISBN #
3
Chinese San Francisco, 1850-1943: A Trans-Pacific Community (Asian America)
view sourceFounded during the Gold Rush years, the Chinese community of San Francisco became the largest and most vibrant Chinatown in America. For those Chinese traveling between the Old World and the New, San Francisco was a port of entry and departure. Many Chinese settled there, forming one of the oldest c...
Author
Yong Chen
Binding
Paperback
Pages
432
Publisher
Stanford University Press
ISBN #
0804745501
EAN Code
9780804745505
ISBN #
1
CHINESE IDIOMS AND THEIR ENGLISH EQUIVALENTS
view sourceAuthor
Chen and Dr. Spring Chen Yong-Zhen
Binding
Hardcover
Publisher
Altai House
ISBN #
9620700430
EAN Code
9789620700439
ISBN #
8
Us Patents
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Vertical Cavity Surface Emitting Laser (Vcsel) Using Buried Bragg Reflectors And Method For Producing Same
view source -
US Patent:6376269, Apr 23, 2002
-
Filed:Feb 2, 1999
-
Appl. No.:09/243184
-
Inventors:Yong Chen - Mountain View CA
Shin-Yuan Wang - Palo Alto CA -
Assignee:Agilent Technologies, Inc. - Palo Alto CA
-
International Classification:H01L 2100
-
US Classification:438 29, 438 45, 438 46, 438 47, 372 45, 372 50, 372 98, 372 99
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Abstract:A current confinement region located proximate to a pair of Bragg reflectors in a semiconductor laser and an epitaxial lateral overgrowth layer grown through an aperture in the current confinement region allows a desirable current flow in the laser. The placement of the current confinement region having an aperture formed therein allows the desired current flow through an active layer of the laser. This current flow allows the laser to achieve a single spatial mode output. Furthermore, the ability to place a pair of Bragg reflectors in close proximity to each other achieves a short optical cavity resulting in a single longitudinal mode output. Together, the single spatial mode and single longitudinal mode result in a desired single frequency output. The single frequency output is particularly useful for high speed, high rate optical and telecommunications.
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Nanoscale Patterning For The Formation Of Extensive Wires
view source -
US Patent:6407443, Jun 18, 2002
-
Filed:Jun 20, 2001
-
Appl. No.:09/886355
-
Inventors:Yong Chen - Palo Alto CA
R. Stanley Williams - Mountain View CA -
Assignee:Hewlett-Packard Company - Palo Alto CA
-
International Classification:H01L 21336
-
US Classification:257616, 257624, 257635, 257768
-
Abstract:A method for forming a platen useful for forming nanoscale wires for device applications comprises: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on the substrate to form a stack having a major surface parallel to that of the substrate; (c) cleaving the stack normal to its major surface to expose the plurality of alternating layers; and (d) etching the exposed plurality of alternating layers to a chosen depth using an etchant that etches one material at a different rate than the other material to thereby provide the surface with extensive strips of indentations and form the platen useful for molding masters for nano-imprinting technology. The pattern of the platen is then imprinted into a substrate comprising a softer material to form a negative of the pattern, which is then used in further processing to form nanowires. The nanoscale platen thus comprises a plurality of alternating layers of the two dissimilar materials, with the layers of one material etched relative the layers of the other material to form indentations of the one material.
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Integrated Circuit Substrate That Accommodates Lattice Mismatch Stress
view source -
US Patent:6429466, Aug 6, 2002
-
Filed:Jan 29, 2001
-
Appl. No.:09/774199
-
Inventors:Yong Chen - Mountain View CA
Scott W. Corzine - Sunnyvale CA
Theodore I. Kamins - Palo Alto CA
Michael J. Ludowise - San Jose CA
Pierre H. Mertz - Mountain View CA
Shih-Yuan Wang - Palo Alto CA -
Assignee:Agilent Technologies, Inc. - Palo Alto CA
-
International Classification:H01L 31072
-
US Classification:257183, 257184, 257185, 438309
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Abstract:A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated in the substrate such that the buried layer isolates a layer of the substrate that includes the growth surface from the remainder of the substrate. The second material is then deposited on the growth surface at a growth temperature. The isolated layer of the substrate has a thickness that is less than the thickness at which defects are caused in the crystalline lattice of the first material by the second material crystallizing thereon. The buried layer is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layer without deforming the remainder of the substrate. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates. In the case of silicon-based substrates, the buried layer is preferably SiO that is sufficiently malleable at the growth temperature to allow the deformation of the isolated substrate layer.
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Fabrication Of Molecular Electronic Circuit By Imprinting
view source -
US Patent:6432740, Aug 13, 2002
-
Filed:Jun 28, 2001
-
Appl. No.:09/895601
-
Inventors:Yong Chen - Palo Alto CA
-
Assignee:Hewlett-Packard Company - Palo Alto CA
-
International Classification:H01L 5140
-
US Classification:438 99, 438703
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Abstract:A method of fabricating a molecular electronic device or crossbar memory device is provided. The device comprises at least one pair of crossed wires and a molecular switch film therebetween. The method comprises: (a) forming at least one bottom electrode on a substrate by first forming a first layer on the substrate and patterning the first layer to form the bottom electrode by an imprinting technique; (b) forming the molecular switch film on top of the bottom electrode; (c) optionally forming a protective layer on top of the molecular switch film to avoid damage thereto during further processing; (d) coating a polymer layer on top of the protective layer and patterned the polymer layer by the imprinting method to form openings that expose portions of the protective layer; and (e) forming at least one top electrode on the protective layer through the openings in the polymer layer by first forming a second layer on the polymer layer and patterning the second layer. The imprinting method can be used to fabricate nanoscale patterns over a large area at high speeds acceptable in industrial standards. Consequently, it can be used to fabricate nanoscale molecular devices, e. g.
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Epitaxial Material Grown Laterally Within A Trench And Method For Producing Same
view source -
US Patent:6500257, Dec 31, 2002
-
Filed:Apr 17, 1998
-
Appl. No.:09/062028
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Inventors:Shih-Yuan Wang - Palo Alto CA
Changhua Chen - San Jose CA
Yong Chen - Mountain View CA
Scott W. Corzine - Sunnyvale CA
R. Scott Kern - San Jose CA -
Assignee:Agilent Technologies, Inc. - Palo Alto CA
-
International Classification:C30B 2300
-
US Classification:117 95, 438479
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Abstract:An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.
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Configurable Nanoscale Crossbar Electronic Circuits Made By Electrochemical Reaction
view source -
US Patent:6518156, Feb 11, 2003
-
Filed:Apr 25, 2000
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Appl. No.:09/558955
-
Inventors:Yong Chen - Palo Alto CA
R. Stanley Williams - Mountain View CA -
Assignee:Hewlett-Packard Company - Palo Alto CA
-
International Classification:H01L 2144
-
US Classification:438597, 438598, 438957
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Abstract:Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a configurable layer between the lines. Methods are provided for altering the thickness and/or resistance of the configurable layer by oxidation or reduction methods, employing a solid material as the configurable layer. Specifically a method is provided for configuring nanoscale devices in a crossbar array of configurable devices comprising arrays of cross-points of a first layer of nanoscale lines comprising a first metal or a first semiconductor material crossed by a second layer of nanoscale lines comprising a second metal or a second semiconductor material. The method comprises: (a) forming the first layer on a substrate; (b) forming a solid phase of a configurable material on the first layer at least in areas where the second layer is to cross the first layer; (c) forming the second layer on the configurable material, over the first layer; and (d) changing a property of the configurable material to thereby configure the nanoscale devices.
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Fabricating A Molecular Electronic Device Having A Protective Barrier Layer
view source -
US Patent:6541309, Apr 1, 2003
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Filed:Mar 21, 2001
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Appl. No.:09/815844
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Inventors:Yong Chen - Redwood City CA
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Assignee:Hewlett-Packard Development Company LP - Houston TX
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International Classification:H01L 2144
-
US Classification:438118, 438939, 438951, 365151
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Abstract:A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular layer sandwiched between a bottom wire layer and a top wire layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.
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Molecular Memory Systems And Methods
view source -
US Patent:6542400, Apr 1, 2003
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Filed:Mar 27, 2001
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Appl. No.:09/819402
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Inventors:Yong Chen - Redwood City CA
Robert G. Walmsley - Palo Alto CA -
Assignee:Hewlett-Packard Development Company LP - Houston TX
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International Classification:G11C 1100
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US Classification:365151, 365118, 365217
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Abstract:A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct electrical contact without substantial risk of damage to either the scanning probe or the molecular recording medium. In this way, the invention avoids the high emission currents, which may damage the probe electrode or the recording media, or both, and avoids other difficulties often associated molecular memory systems with non-contacting probe electrodes.
Name / Title
Company / Classification
Phones & Addresses
President
SU'S RESTAURANT CORPORATION
Dba Oriental House 3704 Washington St, Jamaica Plain, MA 02130
Boston, MA 02124
Boston, MA 02124
President
Entholpy Emc, Inc
4675 Stevens Crk Blvd, Santa Clara, CA 95051
President
M&M CHEN FAMILY FOUNDATION
4675 Stevens Crk Blvd, Santa Clara, CA 95051
President
VIADOR INC
Information Retrieval Services · Prepackaged Software Svc Computer Related Svcs Data Processing School
Information Retrieval Services · Prepackaged Software Svc Computer Related Svcs Data Processing School
1515 S El Camino Real #200, San Mateo, CA 94402
4677 Old Ironsides Dr, Santa Clara, CA 95054
4677 Old Ironsides Dr, Santa Clara, CA 95054
Principal
Chens Construction Co
Single-Family House Construction
Single-Family House Construction
3255 Revere Ave, Oakland, CA 94605
M
Mirai LLC
Half Moon Bay Garden Supplies LLC
Retail - Garden Decoration Supplies
Retail - Garden Decoration Supplies
501 San Mateo Rd, Princeton by the Sea, CA 94019
NEW PEKING EXPRESS INC
Medicine Doctors
Yong Chen
view sourceSpecialties:
Internal Medicine
Work:
Bon Secours Charity Health System Medical GroupHudson Valley Medical Associates
26 Firemens Memorial Dr STE 215, Pomona, NY 10970
8453540011 (phone), 8453540147 (fax)
26 Firemens Memorial Dr STE 215, Pomona, NY 10970
8453540011 (phone), 8453540147 (fax)
Education:
Medical School
Suzhou Med Coll, Suzhou City, Jiangsu, China
Graduated: 1982
Suzhou Med Coll, Suzhou City, Jiangsu, China
Graduated: 1982
Procedures:
Electrocardiogram (EKG or ECG)
Vaccine Administration
Vaccine Administration
Conditions:
Acute Sinusitis
Acute Upper Respiratory Tract Infections
Anemia
Anxiety Dissociative and Somatoform Disorders
Anxiety Phobic Disorders
Acute Upper Respiratory Tract Infections
Anemia
Anxiety Dissociative and Somatoform Disorders
Anxiety Phobic Disorders
Languages:
Chinese
English
Russian
Spanish
English
Russian
Spanish
Description:
Dr. Chen graduated from the Suzhou Med Coll, Suzhou City, Jiangsu, China in 1982. He works in Pomona, NY and specializes in Internal Medicine. Dr. Chen is affiliated with Good Samaritan Regional Medical Center.
Yong Y. Chen
view sourceSpecialties:
Internal Medicine
Work:
Cleveland ClinicChagrin Falls Family Health Center
551 Washington St, Chagrin Falls, OH 44022
4408939393 (phone), 4408936365 (fax)
551 Washington St, Chagrin Falls, OH 44022
4408939393 (phone), 4408936365 (fax)
Education:
Medical School
Shanghai Second Med Univ, Shanghai City, Shanghai, China
Graduated: 1982
Shanghai Second Med Univ, Shanghai City, Shanghai, China
Graduated: 1982
Procedures:
Arthrocentesis
Bone Marrow Biopsy
Destruction of Benign/Premalignant Skin Lesions
Varicose Vein Procedures
Bone Marrow Biopsy
Destruction of Benign/Premalignant Skin Lesions
Varicose Vein Procedures
Conditions:
Diabetes Mellitus (DM)
Gastroesophageal Reflux Disease (GERD)
Hypothyroidism
Osteoporosis
Abdominal Hernia
Gastroesophageal Reflux Disease (GERD)
Hypothyroidism
Osteoporosis
Abdominal Hernia
Languages:
Chinese
English
English
Description:
Dr. Chen graduated from the Shanghai Second Med Univ, Shanghai City, Shanghai, China in 1982. She works in Chagrin Falls, OH and specializes in Internal Medicine. Dr. Chen is affiliated with Cleveland Clinic and Hillcrest Hospital.
Yong Chen
view sourceSpecialties:
Preventive Medicine
Occupational Medicine
General Preventive Medicine
Occupational Medicine
General Preventive Medicine
Education:
Tianjin Med Coll, Tianjin, Tianjin, China (1983)
Yong Shin Chen
view sourceSpecialties:
Anesthesiology
Surgery
Surgery
Education:
Chung Shan Medical University (1969)
Isbn (Books And Publications)
Chinese San Francisco, 1850-1943: A Trans-Pacific Community
view sourceAuthor
Yong Chen
ISBN #
0804736057
Chinese San Francisco, 1850-1943: A Trans-Pacific Community
view sourceAuthor
Yong Chen
ISBN #
0804745501
Yong Thau Chen
view source
Yong Huang Chen
view source
Yong Voon Chen
view source
Yong Xiang Chen
view source
Yong Shui Chen
view source
Yong Cong Chen
view source
Yong Jiam Chen
view source
Yong Kuan Chen
view sourceYoutube
Plaxo
Yong Chen
view sourceNashua, NH
Classmates
Yong Chen
view sourceSchools:
Rippling Woods Elementary School Glen Burnie MD 1982-1986
Yong Chen
view sourceSchools:
university of illinois at champaign Champaign IL 1997-2001
Community:
Thomas Hayes, Jim Slagle, Richard Ghetzler, Thomas Liss
Yong Hai Chen
view sourceSchools:
Xiangmin High School Shanghai China 1978-1982
Community:
Glenda Case, Raazia Bokhari
Yong Chen
view sourceSchools:
Lower East Side Preparatory New York NY 2001-2003
Community:
Jeffery Hartley, Kevin Warren, Linlin Huang, Rodney Stafford, Maria Lomax
Yong Chen
view sourceSchools:
Brooklyn Studio High School Brooklyn NY 2000-2004
Community:
Theresa Chapman
Rippling Woods Elementary...
view sourceGraduates:
jAZMIN Simmons (1995-1999),
Mallory Benfield (1996-2000),
Cherkea Henson (1997-2000),
Thomas Neubauer (1995-2001),
Yong Chen (1982-1986)
Mallory Benfield (1996-2000),
Cherkea Henson (1997-2000),
Thomas Neubauer (1995-2001),
Yong Chen (1982-1986)
Lower East Side Preparato...
view sourceGraduates:
Robert Chen (1974-1975),
Yong Chen (2001-2003),
David Pellot (1972-1974),
Anthony Alvarino (1973-1974)
Yong Chen (2001-2003),
David Pellot (1972-1974),
Anthony Alvarino (1973-1974)
Xiangmin High School, Sha...
view sourceGraduates:
Yong Hai Chen (1978-1982),
Helen Zhao (1993-1997),
Lei Feng (1983-1987)
Helen Zhao (1993-1997),
Lei Feng (1983-1987)
Myspace
Flickr
Googleplus
Yong Chen
Work:
Pangkalrejo - Owner
Education:
UKSW - Elektro
Tagline:
Be your self
Yong Chen
Yong Chen
Work:
Windriver - Program Manager
Yong Chen
Work:
Oracle Corporation
Yong Chen
Work:
247Garden.com
Yong Chen
Work:
VISTA COMMUNICATIONS GROUP INC. - PRESIDENT ^& CEO
Yong Chen
Yong Chen
Get Report for Yong Chen from Lexington, MA, age ~59