Yong Yong Lin

US Patent:

8246933, Aug 21, 2012

Filed:

Nov 26, 2008

Appl. No.:

12/324318

Inventors:

Xingmao Jiang - Albuquerque NM, US
C. Jeffrey Brinker - Albuquerque NM, US
Yong Lin - Albuquerque NM, US
Yung-Sung Cheng - Albuquerque NM, US

Assignee:

STC.UNM - Albuquerque NM

International Classification:

A61K 9/14
A01N 59/16

US Classification:

424 46, 424489, 424618, 977810, 977906, 977915

Abstract:

A method of forming and resulting nano-structured composite includes atomizing a mixture of an amount of each of aminopropyltriethoxysilane, AgNO, DI water, and ethanol in a carrier gas; heating the atomized droplets at a selected temperature for a time sufficient to reduce the Ag to its elemental form in a silica matrix; and outputting the nano structured composite particles. A predetermined heating time is from about 0. 01 to about 40 seconds and a selected heating temperature is from about 200 to about 800 C. The nano structured composite includes a plurality of nano particles at a contact surface of the composite, dispersed throughout and at a contact surface of the composite, or dispersed throughout the composite.

US Patent:

20130256751, Oct 3, 2013

Filed:

Dec 1, 2010

Appl. No.:

13/990756

Inventors:

Aaron Joseph Ptak - Littleton CO, US
Yong Lin - Albuquerque NM, US
Andrew Norman - Evergreen CO, US
Kirstin Alberi - Denver CO, US

Assignee:

ALLIANCE FOR SUSTAINABLE ENERGY, LLC - Golden CO

International Classification:

H01L 21/02
H01L 29/04

US Classification:

257190, 438479

Abstract:

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

US Patent:

20150090321, Apr 2, 2015

Filed:

Oct 2, 2013

Appl. No.:

14/044147

Inventors:

- Albuquerque NM, US
Yong Lin - Albuquerque NM, US
Pravin Patel - Albuquerque NM, US
Mark A. Stan - Albuquerque NM, US
Arthur Cornfeld - Sandia Park NM, US
Daniel McGlynn - Albuquerque NM, US
Fred Newman - Albuquerque NM, US

Assignee:

Emcore Solar Power, Inc. - Albuquerque NM

International Classification:

H01L 31/0687
H01L 31/18

US Classification:

136255, 438 74

Abstract:

A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.

US Patent:

20140182667, Jul 3, 2014

Filed:

Jan 3, 2013

Appl. No.:

13/733362

Inventors:

Benjamin C. Richards - Albuquerque NM, US
Yong Lin - Albuquerque NM, US
Paul R. Sharps - Albuquerque NM, US
Pravin Patel - Albuquerque NM, US

International Classification:

H01L 31/0304
H01L 31/18
H01L 31/0725

US Classification:

136255, 438 69

Abstract:

A multijunction photovoltaic cell including a top subcell; a second subcell disposed immediately adjacent to the top subcell and producing a first photo-generated current; and including a sequence of first and second different semiconductor layers with different lattice constant; and a lower subcell disposed immediately adjacent to the second subcell and producing a second photo-generated current substantially equal in amount to the first photo-generated current density.