Young A Jung

US Patent:

7032157, Apr 18, 2006

Filed:

Mar 17, 2003

Appl. No.:

10/390317

Inventors:

Young Dug Jung - San Jose CA, US
Yeong Kyun Lee - San Jose CA, US
Chin Won Cho - San Jose CA, US

Assignee:

Samsung Electronics, Co., Ltd. - Suwon

International Classification:

H03M 13/00

US Classification:

714758, 360 31

Abstract:

A method for optimizing UDMA transfer signals parameter that functions independently of a computer system is provided. The method of the invention utilizes UDMA CRC errors to adjust an optimized UDMA transfer signal parameter. A total error rate is logged for each selected parameter for determining the parameter with the lowest total error rate. The method functions continuously, to provide reduced CRC error generation and data corruption, and enhanced UDMA transfer signal integrity.

US Patent:

20050280914, Dec 22, 2005

Filed:

Jun 21, 2004

Appl. No.:

10/873658

Inventors:

Yeong Lee - San Jose CA, US
Gyu Kim - San Jose CA, US
Young Jung - San Jose CA, US
Kang Lee - San Jose CA, US

International Classification:

G11B027/36
G11B005/09

US Classification:

360031000, 360053000

Abstract:

A hard disk drive that updates a retry look-up table to be commensurate with a successful retry read operation. The drive may contain a retry look-up table that contains a plurality of retry steps. Each retry step may have a different read parameter that is changed in an attempt to read data that initially created an error. The controller will reset the look-up table by swapping an N retry step with a N-1 retry step if the N step is successful in reading the data greater than a predetermined number of times. In the next retry cycle the drive will reach the N step sooner in the cycle than before the steps were swapped, thus possibly reducing the time required to successfully read the data.

US Patent:

20130253181, Sep 26, 2013

Filed:

Mar 11, 2013

Appl. No.:

13/793900

Inventors:

Leonid Beigelman - San Mateo CA, US
Young Chun Jung - Lexington MA, US

Assignee:

VERTEX PHARMACEUTICALS INC. - Cambridge MA
ALIOS BIOPHARMA, INC. - South San Francisco CA

International Classification:

C07H 19/10
C07F 9/26

US Classification:

536 268, 558138

Abstract:

Disclosed herein are methods of preparing a phosphorothioate nucleotide analog, which are useful in treating diseases and/or conditions such as viral infections.

US Patent:

20130281687, Oct 24, 2013

Filed:

Mar 18, 2013

Appl. No.:

13/845415

Inventors:

ALIOS BIOPHARMA, INC. - , US
VERTEX PHARMACEUTICALS INC. - , US
Leonid Beigelman - San Mateo CA, US
Young Chun Jung - Lexington MA, US

International Classification:

C07H 19/10

US Classification:

536 2853, 548111, 558200

Abstract:

Disclosed herein are methods of preparing a phosphorothioate nucleotide analog, which are useful in treating diseases and/or conditions such as viral infections.

US Patent:

20220246656, Aug 4, 2022

Filed:

Apr 22, 2022

Appl. No.:

17/727247

Inventors:

- Santa Clara CA, US
Young Woo Jung - Campbell CA, US

Assignee:

OMNIVISION TECHNOLOGIES, INC. - Santa Clara CA

International Classification:

H01L 27/146

Abstract:

Methods of forming transistors include providing a substrate material, forming a recess to a first depth in the substrate material, the recess corresponding to a gate region and extending in a channel length direction and a channel width direction that is perpendicular to the channel length direction, forming a trench structure in the substrate material by deepening the recess to a second depth using an isotropic process, forming an isolation layer on the substrate material, forming a gate portion of the isolation layer on the substrate material such that the gate portion of the isolation layer extends into the trench structure, and forming a gate on the isolation layer such that the gate extends into the trench structure.

US Patent:

20220207245, Jun 30, 2022

Filed:

Mar 24, 2021

Appl. No.:

17/211014

Inventors:

- San Jose CA, US
Jin Hyung PARK - Seoul, KR
Young Hoon JUNG - San Jose CA, US

International Classification:

G06F 40/58
G06F 40/279
G06F 3/0482

Abstract:

Proposed are a machine translation apparatus and a machine translation method for displaying a translation result through a user interface. The machine translation method may include: display an initial machine translation result for a first translation target sentence; correcting the initial machine translation result according to a manipulation result of a user on the user interface unit, and displaying the corrected machine translation result; and analyzing a difference between the corrected machine translation result and the initial machine translation result, and reflecting the analysis result to perform machine translation on a second translation target sentence. The machine translation apparatus and the method can be used to efficiently acquire a high-quality translation within a short time while minimizing time, cost and effort of a user, which used to be required for a conventional machine translation process.

US Patent:

20190165016, May 30, 2019

Filed:

Nov 30, 2017

Appl. No.:

15/828217

Inventors:

- Santa Clara CA, US
Young Woo Jung - San Jose CA, US
Chih-Wei Hsiung - San Jose CA, US
Dyson Tai - San Jose CA, US
Lindsay Grant - Los Gatos CA, US

International Classification:

H01L 27/146
H04N 5/3745
H01L 29/10

Abstract:

An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.