Yu H Chang

US Patent:

6423949, Jul 23, 2002

Filed:

May 19, 1999

Appl. No.:

09/314845

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

US Patent:

6646235, Nov 11, 2003

Filed:

Oct 19, 2001

Appl. No.:

10/037151

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

US Patent:

8334662, Dec 18, 2012

Filed:

Sep 11, 2009

Appl. No.:

12/558275

Inventors:

Xuecheng Jin - Palo Alto CA, US
Yu Cheng Chang - Cupertino CA, US
Yang Li - Santa Clara CA, US
Maofeng Lan - Palo Alto CA, US
John W. Kesterson - San Jose CA, US
Xiaoyan Wang - Milpitas CA, US
Chenghung Pan - Palo Alto CA, US

Assignee:

iWatt Inc. - Campbell CA

International Classification:

G05F 1/00
H05B 37/02
H05B 39/04
H05B 41/36

US Classification:

315299, 315291, 315294, 315300, 315301

Abstract:

An adaptive switch mode LED driver provides an intelligent approach to driving multiple strings of LEDs. The LED driver determines an optimal current level for each LED channel from a limited set of allowed currents. The LDO driver then determines a PWM duty cycle for driving the LEDs in each LED channel to provide precise brightness control over the LED channels. Beneficially, the LED driver minimizes the power dissipation in the LDO circuits driving each LED string, while also ensuring that the currents in each LED string are maintained within a limited range. A sample and hold LDO allows PWM control over extreme duty cycles with very fast dynamic response. Furthermore, fault protection circuitry ensures fault-free startup and operation of the LED driver.

US Patent:

20080202425, Aug 28, 2008

Filed:

Jan 29, 2008

Appl. No.:

12/021825

Inventors:

Avgerinos V. Gelatos - Redwood City CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US

International Classification:

C23C 16/06

US Classification:

118724

Abstract:

Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120 C. to about 180 C., preferably, from about 140 C. to about 160 C., more preferably, from about 145 C. to about 155 C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

US Patent:

20080206987, Aug 28, 2008

Filed:

Jan 29, 2008

Appl. No.:

12/021798

Inventors:

Avgerinos V. Gelatos - Redwood City CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US

International Classification:

H01L 21/44

US Classification:

438654, 257E21476

Abstract:

Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120 C. to about 180 C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

US Patent:

20130127344, May 23, 2013

Filed:

Nov 13, 2012

Appl. No.:

13/675515

Inventors:

Xuecheng Jin - Palo Alto CA, US
Yu Chong Chang - Cupertino CA, US
Yang Li - Los Altos CA, US
Maofeng Lan - Palo Alto CA, US
John W. Kesterson - Seaside CA, US
Xiaoyan Wang - Milpitas CA, US
Chenghung Pan - Palo Alto CA, US

International Classification:

H05B 33/08

US Classification:

315122, 315186, 438 17

Abstract:

An adaptive switch mode LED driver provides an intelligent approach to driving multiple strings of LEDs. The LED driver determines an optimal current level for each LED channel from a limited set of allowed currents. The LDO driver then determines a PWM duty cycle for driving the LEDs in each LED channel to provide precise brightness control over the LED channels. Beneficially, the LED driver minimizes the power dissipation in the LDO circuits driving each LED string, while also ensuring that the currents in each LED string are maintained within a limited range. A sample and hold LDO allows PWM control over extreme duty cycles with very fast dynamic response. Furthermore, fault protection circuitry ensures fault-free startup and operation of the LED driver.