Yu Tsung Matthew Wang

US Patent:

6432546, Aug 13, 2002

Filed:

Jul 24, 2000

Appl. No.:

09/624527

Inventors:

Yu Wang - Greenbelt MD
Jeffrey M. Finder - Chandler AZ
Kurt Eisenbeiser - Tempe AZ
Zhiyi Yu - Gilbert AZ
Ravindranath Droopad - Chandler AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

B32B 900

US Classification:

428448, 428446, 428469, 428472, 428697, 428688, 428699, 428700, 428701, 428702

Abstract:

A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

US Patent:

6750067, Jun 15, 2004

Filed:

Apr 19, 2002

Appl. No.:

10/126772

Inventors:

Yu Wang - Greenbelt MD
Jeffrey M. Finder - Chandler AZ
Kurt Eisenbeiser - Tempe AZ
Zhiyi Yu - Gilbert AZ
Ravindranath Droopad - Chandler AZ

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 2100

US Classification:

438 3, 438 96, 438480

Abstract:

A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

US Patent:

7472238, Dec 30, 2008

Filed:

Nov 7, 2005

Appl. No.:

11/269515

Inventors:

Parag Gokhale - Ocean NJ, US
Jun Lu - Ocean NJ, US
Yanhui Lu - Chester Springs PA, US
Yu Wang - Edison NJ, US
Rajiv Kottomtharayil - Marlboro NJ, US

Assignee:

CommVault Systems, Inc. - Oceanport NJ

International Classification:

G06F 12/02

US Classification:

711159, 711112, 711161, 711162

Abstract:

In one embodiment of the invention, a method is provided for retrieving certain electronic information previously stored on certain storage media after a threshold set in the storage retention criteria has been exceeded in an electronic information storage system that stores electronic information on storage media in accordance with a storage retention criteria is provided. The method includes storing a record in a memory associated with a system manager that assigns the storage retention criteria to the certain electronic data, designating the storage media available for overwrite after the threshold set in the storage retention policy has been exceeded, identifying the certain storage media available for overwrite, and retrieving information from the certain media after the threshold set in the storage retention policy has been exceeded.

US Patent:

7632733, Dec 15, 2009

Filed:

Apr 29, 2006

Appl. No.:

11/413248

Inventors:

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Assignee:

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

International Classification:

H01L 21/336

US Classification:

438270, 257E2153

Abstract:

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.

US Patent:

7633267, Dec 15, 2009

Filed:

Jul 5, 2005

Appl. No.:

11/175555

Inventors:

Keith Douglas Kepler - Belmont CA, US
Yu Wang - Foster City CA, US

Assignee:

Farasis Energy, Inc. - Hayward CA

International Classification:

H01M 10/46

US Classification:

320150

Abstract:

A high throughput combinatorial screening method and apparatus for the evaluation of electrochemical materials using a single voltage source () is disclosed wherein temperature changes arising from the application of an electrical load to a cell array () are used to evaluate the relative electrochemical efficiency of the materials comprising the array. The apparatus may include an array of electrochemical cells () that are connected to each other in parallel or in series, an electronic load () for applying a voltage or current to the electrochemical cells (), and a device (), external to the cells, for monitoring the relative temperature of each cell when the load is applied.

US Patent:

7710371, May 4, 2010

Filed:

Dec 16, 2004

Appl. No.:

11/014490

Inventors:

Ping Mei - Palo Alto CA, US
Jurgen Daniel - Mountain View CA, US
James B. Boyce - Los Altos CA, US
Jackson Ho - Palo Alto CA, US
Rachel Lau - San Jose CA, US
Yu Wang - Union City CA, US

Assignee:

Xerox Corporation - Norwalk CT

International Classification:

G09G 3/34
C25B 9/00
F04B 17/00
B41J 2/14
G02F 1/153
H04R 19/00

US Classification:

345 85, 204253, 204255, 204257, 204252, 4174131, 347 49, 359267, 359291, 381176, 381399

Abstract:

Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume.

US Patent:

7873802, Jan 18, 2011

Filed:

Nov 24, 2008

Appl. No.:

12/276868

Inventors:

Parag Gokhale - Ocean NJ, US
Jun Lu - Ocean NJ, US
Yanhui Lu - Acton MA, US
Yu Wang - Edison NJ, US
Rajiv Kottomtharayil - Marlboro NJ, US

Assignee:

CommVault Systems, Inc. - Oceanport NJ

International Classification:

G06F 12/02

US Classification:

711159, 711112, 711161, 711162

Abstract:

In one embodiment of the invention, a method is provided for retrieving certain electronic information previously stored on certain storage media after a threshold set in the storage retention criteria has been exceeded in an electronic information storage system that stores electronic information on storage media in accordance with a storage retention criteria is provided. The method includes storing a record in a memory associated with a system manager that assigns the storage retention criteria to the certain electronic data, designating the storage media available for overwrite after the threshold set in the storage retention policy has been exceeded, identifying the certain storage media available for overwrite, and retrieving information from the certain media after the threshold set in the storage retention policy has been exceeded.

US Patent:

7928507, Apr 19, 2011

Filed:

Dec 9, 2009

Appl. No.:

12/653130

Inventors:

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Assignee:

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

International Classification:

H01L 29/66
H01L 29/06

US Classification:

257330, 257622, 257E2153, 257E21585

Abstract:

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.