Yuchun A Wang

US Patent:

6435944, Aug 20, 2002

Filed:

Oct 27, 1999

Appl. No.:

09/428304

Inventors:

Yuchun Wang - Cupertino CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 100

US Classification:

451 41, 451 60, 451446, 51309, 106 3, 438692, 438693, 252 792

Abstract:

A CMP slurry is formulated with a single component oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. Embodiments include CMP Cu with a fixed abrasive pad or an abrasive containing slurry, employing a peroxy acid, e. g. , peroxy benzoic acid, or a polyethylene glycol peroxy acid. In another embodiment, a single component is employed which dissociates in the slurry into an oxidizer and complexing agent, such as an amine-peroxy acid, e. g. , urea peroxy acid.

US Patent:

6520840, Feb 18, 2003

Filed:

Oct 19, 2000

Appl. No.:

09/692723

Inventors:

Yuchun Wang - San Jose CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 100

US Classification:

451 41, 451 60, 451446, 51309, 106 3, 438692, 438693, 252 792

Abstract:

A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

US Patent:

6537144, Mar 25, 2003

Filed:

Feb 17, 2000

Appl. No.:

09/505899

Inventors:

Stan D. Tsai - Fremont CA
Yuchun Wang - Cupertino CA
Kapila Wijekoon - Santa Clara CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24D 1100

US Classification:

451526, 451533, 451538, 451539

Abstract:

Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

US Patent:

6561873, May 13, 2003

Filed:

Mar 8, 2002

Appl. No.:

10/093897

Inventors:

Stan D. Tsai - Fremont CA
Yuchun Wang - Cupertino CA
Kapila Wijekoon - Santa Clara CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 100

US Classification:

451 36, 451 41, 451533

Abstract:

Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

US Patent:

6569349, May 27, 2003

Filed:

Oct 23, 2000

Appl. No.:

09/694866

Inventors:

Yuchun Wang - San Jose CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C09K 1300

US Classification:

252 791, 252 792, 252 794, 252 795

Abstract:

A method and composition for planarizing a substrate. The composition includes one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, a polar solvent, and deionized water. The composition may further comprise one or more surfactants, one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including a polar solvent.

US Patent:

6572453, Jun 3, 2003

Filed:

May 18, 2000

Appl. No.:

09/575218

Inventors:

Kapila Wijekoon - Santa Clara CA
Stan D. Tsai - Fremont CA
Yuchun Wang - Cupertino CA
Doyle E. Bennett - Santa Clara CA
Fred C. Redeker - Fremont CA
Madhavi Chandrachood - Sunnyvale CA
Brian J. Brown - Palo Alto CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 100

US Classification:

451 56, 451443

Abstract:

A polishing method is provided which simultaneously supplies both a polishing fluid and a conditioning fluid to a polishing pad, while a substrate is in moving contact with the polishing pad.

US Patent:

6638143, Oct 28, 2003

Filed:

Dec 14, 2000

Appl. No.:

09/737414

Inventors:

Yuchun Wang - San Jose CA
Stan D. Tsai - Fremont CA
Kapila Wijekoon - Palo Alto CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 100

US Classification:

451 41

Abstract:

Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

US Patent:

6657726, Dec 2, 2003

Filed:

Aug 18, 2000

Appl. No.:

09/643830

Inventors:

Yuchun Wang - San Jose CA
Boguslaw Swedek - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01N 2159

US Classification:

356436, 356246, 356440

Abstract:

A method and apparatus for measuring a slurry distribution. A slurry solution is doped with a light absorbing dye having an absorptivity sensitive to a physical parameter such as acidity, temperature or pressure. The solution is delivered between a platen and substrate in a first physical state where it absorbs light. A laser beam is generated, transmitted through the slurry layer, reflected off of the substrate, and detected by a photodetector. The thickness of the slurry is measured from its absorptivity and the transmittance of the laser beam. A relative motion between the light source and substrate allows the slurry layer thickness to be measured as a function of distance from the center of the substrate. A final water rinse removes the slurry and brings any residual slurry to a/second physical state where it does not absorb light.