Zhigang Chen from Arlington, VA, age 52

Name / Title

Company / Classification

Phones & Addresses

Zhigang Chen
Principal

BAY1ST Realty & Mortgage Inc
Mortgage Banker/Correspondent

270 Emaron Dr, San Bruno, CA 94066

Zhigang Chen

Bay 1st Realty Mortgage Inc
Mortgage Banker/Correspondent

1499 Bayshore Hwy, Burlingame, CA 94010
6506523983

Resumes

Zhigang Chen

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Location:

Washington, DC

Industry:

Investment Banking

Work:

Columbia University In the City of New York
Master of Public Adminsitration
Trustees Columbia University
Master of Public Adminsitration

Zhigang Chen

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Us Patents

Optical Metrology Using A Photonic Nanojet
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US Patent:

7394535, Jul 1, 2008
Filed:

Mar 20, 2007
Appl. No.:

11/726083
Inventors:

Zhigang Chen - San Jose CA, US
Hanyou Chu - Palo Alto CA, US
Shifang Li - Pleasanton CA, US
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

G01N 21/00
US Classification:

3562374, 3562372, 3562373, 356445, 356342
Abstract:

An inspection area on a semiconductor wafer can be examined using a photonic nanojet. The photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. The inspection area is scanned with the photonic nanojet. A measurement is obtained of the retroreflected light from the dielectric microsphere as the photonic nanojet scans the inspection area. The existence of a structure in the inspection area is determined with the obtained measurement of the retroreflected light.

Automated Process Control Using Optical Metrology With A Photonic Nanojet
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US Patent:

7639351, Dec 29, 2009
Filed:

Mar 20, 2007
Appl. No.:

11/726076
Inventors:

Zhigang Chen - San Jose CA, US
Hanyou Chu - Palo Alto CA, US
Shifang Li - Pleasanton CA, US
Manuel Madriaga - San Jose CA, US
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

G01N 21/00
US Classification:

3562374, 3562372, 356445, 356342
Abstract:

A fabrication cluster can be controlled using optical metrology. A fabrication process is performed on a wafer using a fabrication cluster. A photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. An inspection area on the wafer is scanned with the photonic nanojet. A measurement is obtained of the retroreflected light from the dielectric microsphere as the photonic nanojet scans the inspection area. The existence of a structure in the inspection area is determined with the obtained measurement of the retroreflected light. One or more process parameters of the fabrication cluster is adjusted based on the determination of the existence of the structure in the inspection area.

Efficient And Accurate Method For Real-Time Prediction Of The Self-Bias Voltage Of A Wafer And Feedback Control Of Esc Voltage In Plasma Processing Chamber
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US Patent:

8313664, Nov 20, 2012
Filed:

Nov 20, 2009
Appl. No.:

12/623243
Inventors:

Zhigang Chen - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
Walter R. Merry - Sunnyvale CA, US
Leonid Dorf - Santa Clara CA, US
Kartik Ramaswamy - San Jose CA, US
Kenneth S. Collins - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

G01L 21/30
US Classification:

216 59, 361234
Abstract:

In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.

Rf Power Delivery System In A Semiconductor Apparatus
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US Patent:

8206552, Jun 26, 2012
Filed:

Jun 25, 2008
Appl. No.:

12/146189
Inventors:

Zhigang Chen - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
Kartik Ramaswamy - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23F 1/00
H01L 21/306
C23C 16/00
US Classification:

15634544, 15634551, 118723 E, 118728
Abstract:

Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.

Rf Feed Structure For Plasma Processing
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US Patent:

20110094683, Apr 28, 2011
Filed:

Jun 23, 2010
Appl. No.:

12/821626
Inventors:

ZHIGANG CHEN - Campbell CA, US
SHAHID RAUF - Pleasanton CA, US
KENNETH S. COLLINS - San Jose CA, US
MARTIN JEFF SALINAS - San Jose CA, US
SAMER BANNA - San Jose CA, US
VALENTIN N. TODOROW - Palo Alto CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

H05H 1/24
H01P 5/12
US Classification:

15634535, 333100
Abstract:

Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto.

Inductively Coupled Plasma Apparatus
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US Patent:

20110094994, Apr 28, 2011
Filed:

Jun 23, 2010
Appl. No.:

12/821609
Inventors:

VALENTIN N. TODOROW - Palo Alto CA, US
SAMER BANNA - San Jose CA, US
ANKUR AGARWAL - Mountain View CA, US
ZHIGANG CHEN - San Jose CA, US
ANDREW NGUYEN - San Jose CA, US
MARTIN JEFF SALINAS - San Jose CA, US
SHAHID RAUF - Pleasanton CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

C23F 1/08
C23F 1/00
US Classification:

216 68, 15634548
Abstract:

Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Dual Mode Inductively Coupled Plasma Reactor With Adjustable Phase Coil Assembly
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US Patent:

20110097901, Apr 28, 2011
Filed:

Jun 23, 2010
Appl. No.:

12/821636
Inventors:

SAMER BANNA - San Jose CA, US
VALENTIN N. TODOROW - Palo Alto CA, US
KENNETH S. COLLINS - San Jose CA, US
ANDREW NGUYEN - San Jose CA, US
MARTIN JEFF SALINAS - San Jose CA, US
ZHIGANG CHEN - San Jose CA, US
ANKUR AGARWAL - Mountain View CA, US
ANNIRUDDHA PAL - Santa Clara CA, US
SHAHID RAUF - Pleasanton CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

H01L 21/465
H01L 21/46
US Classification:

438710, 15634548, 15634537, 118723 I, 438758, 257E21482, 257E21485
Abstract:

Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils.

Plasma Processing Apparatus And Liner Assembly For Tuning Electrical Skews
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US Patent:

20120018402, Jan 26, 2012
Filed:

Jul 17, 2011
Appl. No.:

13/184562
Inventors:

James D. Carducci - Sunnyvale CA, US
Zhigang Chen - Campbell CA, US
Shahid Rauf - Pleasanton CA, US
Kenneth S. Collins - San Jose CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

C23F 1/00
B32B 3/24
C23C 14/48
B32B 1/08
C23F 1/08
H05H 1/24
US Classification:

216 67, 15634548, 427569, 427523, 118723 I, 428 341
Abstract:

The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.