Zhihong Chen

US Patent:

7776444, Aug 17, 2010

Filed:

Oct 19, 2006

Appl. No.:

11/583545

Inventors:

Andrew G. Rinzler - Newberry FL, US
Zhihong Chen - Gainesville FL, US

Assignee:

University of Florida Research Foundation, Inc. - Gainesville FL

International Classification:

B32B 9/00

US Classification:

428408, 977742

Abstract:

An optically transparent and electrically conductive single walled carbon nanotube (SWNT) film comprises a plurality of interpenetrated single walled carbon nanotubes, wherein for a 100 nm film the film has sufficient interpenetration to provide a 25 C. sheet resistance of less than 200 ohm/sq. The film also provides at least 20% optical transmission throughout a wavelength range from 0. 4 μm to 5 μm.

US Patent:

7972699, Jul 5, 2011

Filed:

Jul 7, 2010

Appl. No.:

12/831798

Inventors:

Andrew G. Rinzler - Newberry FL, US
Zhihong Chen - Valhalla NY, US

Assignee:

University of Florida Research Foundation, Inc. - Gainesville FL

International Classification:

B32B 9/00

US Classification:

428408, 977742, 4234471

Abstract:

An optically transparent and electrically conductive single walled carbon nanotube (SWNT) film comprises a plurality of interpenetrated single walled carbon nanotubes, wherein for a 100 nm film the film has sufficient interpenetration to provide a 25 C. sheet resistance of less than 200 ohm/sq. The film also provides at least 20% optical transmission throughout a wavelength range from 0. 4 μm to 5 μm.

US Patent:

8124463, Feb 28, 2012

Filed:

Sep 21, 2009

Appl. No.:

12/563553

Inventors:

Zhihong Chen - Yorktown Heights NY, US
Aaron D. Franklin - Yorktown Heights NY, US
James B. Hannon - Yorktown Heights NY, US
George S. Tulevski - Yorktown Heights NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00
H01L 21/84

US Classification:

438149, 438151, 438479

Abstract:

Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided.

US Patent:

8193032, Jun 5, 2012

Filed:

Jun 29, 2010

Appl. No.:

12/826221

Inventors:

Zhihong Chen - Valhalla NY, US
Dechao Guo - Wappingers Falls NY, US
Shu-jen Han - Cortlandt Manor NY, US
Kai Zhao - Fishkill NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438105, 438151, 438585, 438643, 438E21438, 257 24, 257314, 257635, 257411

Abstract:

A method for formation of a carbon-based field effect transistor (FET) includes depositing a first dielectric layer on a carbon layer located on a substrate; forming a gate electrode on the first dielectric layer; etching an exposed portion of the first dielectric layer to expose a portion of the carbon layer; depositing a second dielectric layer over the gate electrode to form a spacer, wherein the second dielectric layer is deposited by atomic layer deposition (ALD), and wherein the second dielectric layer does not form on the exposed portion of the carbon layer; forming source and drain contacts on the carbon layer and forming a gate contact on the gate electrode to form the carbon-based FET.

US Patent:

8274072, Sep 25, 2012

Filed:

Feb 22, 2012

Appl. No.:

13/401967

Inventors:

Zhihong Chen - Valhalla NY, US
Dechao Guo - Wappingers Falls NY, US
Shu-jen Han - Cortlandt Manor NY, US
Kai Zhao - Fishkill NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/76

US Classification:

257 27, 257 29, 257365, 257E21395, 257E29255

Abstract:

A carbon-based field effect transistor (FET) includes a substrate; a carbon layer located on the substrate, the carbon layer comprising a channel region, and source and drain regions located on either side of the channel region; a gate electrode located on the channel region in the carbon layer, the gate electrode comprising a first dielectric layer, a gate metal layer located on the first dielectric layer, and a nitride layer located on the gate metal layer; and a spacer comprising a second dielectric layer located adjacent to the gate electrode, wherein the spacer is not located on the carbon layer.

US Patent:

8288759, Oct 16, 2012

Filed:

Aug 4, 2010

Appl. No.:

12/850095

Inventors:

Zhihong Chen - Valhalla NY, US
Aaron Daniel Franklin - Croton on Hudson NY, US
Shu-Jen Han - Wappingers Falls NY, US

International Classification:

H01L 29/06

US Classification:

257 24, 257365, 257E5104, 257E29264, 257E21421, 438283, 977742, 977938

Abstract:

Transistor devices having vertically stacked carbon nanotube channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; a bottom gate embedded in the substrate with a top surface of the bottom gate being substantially coplanar with a surface of the substrate; a stack of device layers on the substrate over the bottom gate, wherein each of the device layers in the stack includes a first dielectric, a carbon nanotube channel on the first dielectric, a second dielectric on the carbon nanotube channel and a top gate on the second dielectric; and source and drain contacts that interconnect the carbon nanotube channels in parallel. A method of fabricating a transistor device is also provided.

US Patent:

8587065, Nov 19, 2013

Filed:

Feb 1, 2012

Appl. No.:

13/364273

Inventors:

Zhihong Chen - West Lafayette IN, US
Aaron D. Franklin - Croton on Hudson NY, US
James B. Hannon - Mahopac NY, US
George S. Tulevski - White Plains NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 27/01
H01L 27/12
H01L 31/0392

US Classification:

257347, 257 24

Abstract:

Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided.

US Patent:

7261852, Aug 28, 2007

Filed:

Jul 18, 2003

Appl. No.:

10/622818

Inventors:

Andrew G. Rinzler - Newberry FL, US
Zhihong Chen - Gainesville FL, US

Assignee:

University of Florida Research Foundation, Inc. - Gainesville FL

International Classification:

B05D 1/12

US Classification:

264317, 264 11, 4234471

Abstract:

A method of forming optically transparent and electrically conductive SWNT films includes the steps of providing a porous membrane and dispersing a plurality of SWNTs into a solution, the solution including at least one surface stabilizing agent for preventing the SWNTs from flocculating out of suspension. The solution is then applied to the membrane. The solution is then removed, wherein the SWNTs are forced onto the surface of the porous membrane to form a SWNT film on the membrane. The method can include the step of separating the SWNT film from the porous membrane, such as by dissolving the membrane. An electrically conducting and optically transparent single wall carbon nanotube (SWNT) film provides a sheet resistance of less than 200 ohm/sq and at least 30% transmission at a wavelength of 3 μm.