Alicia Ann Novak

US Patent:

8591856, Nov 26, 2013

Filed:

Mar 29, 2006

Appl. No.:

11/277866

Inventors:

Patrick J. Doering - Holliston MA, US
Robert C. Linares - Wellifleet MA, US
Alicia E. Novak - Denver CO, US
John M. Abrahams - Scarsdale NY, US
Michael Murray - Mountain View CA, US

Assignee:

SCIO Diamond Technology Corporation - Greer SC

International Classification:

C30B 29/04

US Classification:

423446, 117 94, 117 95, 117104, 117 15, 117929

Abstract:

An electrolytic cell includes a container for holding an electrolyte. A conductively doped single crystal diamond anode electrode is positioned to be disposed within the electrolyte, as is a conductive cathode electrode. Conductors are coupled to the electrodes for coupling to a power supply. An electrolyte inlet and an electrolyte outlet are coupled to the container for causing electrolyte to flow past the electrodes. The anode electrode is downstream from the cathode electrode in one embodiment, such that an electrolyte comprising water is purified by generation of oxygen and/or ozone.

US Patent:

20060234419, Oct 19, 2006

Filed:

Jan 11, 2006

Appl. No.:

11/329959

Inventors:

Robert Linares - Sherborn MA, US
Patrick Doering - Holliston MA, US
Bryant Linares - Sherborn MA, US
Alfred Genis - East Douglas MA, US
William Dromeshauser - Norwell MA, US
Michael Murray - Mountain View CA, US
Alicia Novak - Denver CO, US
John Abrahams - Scarsdale NY, US

International Classification:

H01L 21/00

US Classification:

438105000

Abstract:

Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.

US Patent:

20110054450, Mar 3, 2011

Filed:

Nov 3, 2010

Appl. No.:

12/938766

Inventors:

Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
William W. Dromeshauser - Norwell MA, US
Michael Murray - Mountain View CA, US
Alicia E. Novak - Denver CO, US
John M. Abrahams - Scarsdale NY, US

Assignee:

Apollo Diamond, Inc - Framingham MA

International Classification:

A61B 17/00
A61F 2/06
A61F 2/64

US Classification:

606 1, 623 124, 623 27

Abstract:

Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.