Chau M Nguyen

US Patent:

6354241, Mar 12, 2002

Filed:

Jul 15, 1999

Appl. No.:

09/354925

Inventors:

Tsutomu Tanaka - Santa Clara CA
Chau Nguyen - San Jose CA
Hari Ponnekanti - Santa Clara CA
Kevin Fairbairn - Saratoga CA
Mark Fodor - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118723E, 118715

Abstract:

An apparatus and method for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor-processing device. The apparatus includes a vessel chamber having an inlet, an outlet and a fluid conduit between the two that fluidly couples the outlet with the inlet. The fluid conduit includes first and second collection sections. The first collection section includes a first plurality of electrodes aligned parallel to a first plane and the second collection section includes a second plurality of electrodes aligned parallel to a second plane that is substantially perpendicular to the first plane. The electrodes are connected to a voltage differential to form an electrostatic particle collector that traps electrically charged particles and particulate matter flowing through the fluid conduit. Particles are collected on the electrodes within the fluid conduit during substrate processing operations such as CVD deposition steps. Then, during a chamber clean operation, unreacted etchant gases used to clean the substrate processing chamber are exhausted through the foreline and into the apparatus of the present invention where they react with the collected particles and powder to convert the solid material into gaseous matter that can be pumped through the foreline without damaging the vacuum pump or other processing equipment.

US Patent:

6616973, Sep 9, 2003

Filed:

Nov 12, 1998

Appl. No.:

09/190961

Inventors:

Chau Nguyen - San Jose CA
Visweswaren Sivaramakrishnan - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

42725538, 4272481, 118715, 118726, 148325, 261 38, 261 62, 261 781, 261 782, 2611211, 261128, 137561 R, 392400

Abstract:

The present invention recognizes that the build-up of residue in a metal alloy injection valve used to inject a liquid phosphorous precursor compound is due to the nickel in the alloy affecting the liquid phosphorous precursor compound. The invention thus provides components manufactured of an alloy having a low nickel content, preferably less than 5% nickel, and more preferably less than 1%. In an additional aspect of the invention, the alloy is provided with a higher chromium content, preferably at least 15% chromium, more preferably 16-27%.

US Patent:

20040020601, Feb 5, 2004

Filed:

Jul 29, 2003

Appl. No.:

10/631303

Inventors:

Jun Zhao - Cupertine CA, US
Farhad Moghadam - Saratoga CA, US
Tim Weidman - Sunnyvale CA, US
Rick Roberts - Sunnyvale CA, US
Hari Ponnekanti - San Jose CA, US
Chau Nguyen - San Jose CA, US
Satish Sundar - Milpitas CA, US
David Quach - San Jose CA, US
Sasson Somekh - Los Altos Hills CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L021/306
C23C016/00

US Classification:

156/345320, 118/72300E

Abstract:

A series of modular apparatuses for processing substrates using a unique combinations of a substrate coating subsystem, a substrate curing subsystem and a PECVD-based capping subsystem. The individual subsystems are capable of being combined with one another for creating unique integrated substrate processing apparatuses that enable combined processing by the coating, curing and capping subsystems in an integrated and controlled environment, thus enabling the processing of substrates in an efficient manner, while minimizing the exposure of the substrates to an external environment and minimizing the condensation of vapors while the substrate is processed by the cure and capping subsystems.

US Patent:

61630071, Dec 19, 2000

Filed:

Mar 19, 1999

Appl. No.:

9/272898

Inventors:

Tsutomu Tanaka - Santa Clara CA
Thomas Nowak - Sunnyvale CA
Chau Nguyen - San Jose CA
Hari Ponnekanti - Fremont CA
Kevin Fairbairn - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B23K 900

US Classification:

21912148

Abstract:

Apparatus for dissociating cleaning gas such as NF. sub. 3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.

US Patent:

59251891, Jul 20, 1999

Filed:

Dec 6, 1995

Appl. No.:

8/568193

Inventors:

Chau Nguyen - San Jose CA
Visweswaren Sivaramakrishnan - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118726

Abstract:

The present invention recognizes that the build-up of residue in a metal alloy injection valve used to inject a liquid phosphorous precursor compound is due to the nickel in the alloy affecting the liquid phosphorous precursor compound. The invention thus provides components manufactured of an alloy having a low nickel content, preferably less than 5% nickel, and more preferably less than 1%. In an additional aspect of the invention, the alloy is provided with a higher chromium content, preferably at least 15% chromium, more preferably 16-27%.