David L French

US Patent:

20220375719, Nov 24, 2022

Filed:

Oct 27, 2020

Appl. No.:

17/774521

Inventors:

- Fremont CA, US
Karl Frederick LEESER - West Linn OR, US
David FRENCH - Fort Myers FL, US
Jin Jimmy WANG - Oakland CA, US
Brandt HENRI - Vancouver, CA

International Classification:

H01J 37/32
H03H 7/38
H01L 21/683

Abstract:

A substrate processing system for processing a substrate within a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from a RF generator and impedance matches an input of the matching network to an output of the RF generator. The tuning circuit is distinct from the matching network and includes a circuit component having a first impedance. The tuning circuit receives an output of the matching network and outputs a second RF signal to a first electrode in a substrate support. The controller determines a target impedance for the circuit component, and based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency to alter the first impedance of the circuit component to match the target impedance.

US Patent:

20220361298, Nov 10, 2022

Filed:

Jun 29, 2022

Appl. No.:

17/853343

Inventors:

- Kirtland AFB NM, US
David Michael French - Portland OR, US

International Classification:

H05B 6/02
H05B 6/46
H05B 6/68
H05B 6/00
H05B 6/64

Abstract:

An electrode is embedded in a piece of ceramic material having a population of conduction band electrons. Applying a voltage bias to the electrode causes electrons to flow towards or away from the electrode to form a positively charged sheath either a distance apart from or adjacent the electrode, depending the polarity of the bias. The electron flow also forms a negatively charged sheath lying opposite the positively charged sheath, and an electrically neutral region lying between the two sheaths. Electromagnetic radiation impinging the ceramic material heats the ceramic where the radiation is absorbed by the electron population. As the incident radiation is absorbed in proportion to the electron density, heating is increased in the negatively charged sheath, relative to the other parts of the ceramic material. The location of heating is controlled by controlling the magnitude and polarity of the voltage bias.

US Patent:

20220216037, Jul 7, 2022

Filed:

May 28, 2020

Appl. No.:

17/595505

Inventors:

- Fremont CA, US
Pramod Subramonium - Beaverton OR, US
Ragesh Puthenkovilakam - Portland OR, US
Rujun Bai - Tigard OR, US
David French - Fort Myers FL, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01J 37/32
H01L 21/027
C23C 16/517
C23C 16/52
H01L 21/311
H01L 21/3213

Abstract:

Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

US Patent:

20210302478, Sep 30, 2021

Filed:

Mar 27, 2020

Appl. No.:

16/832961

Inventors:

- Fremont CA, US
David French - Portland OR, US

International Classification:

G01R 19/25
G01R 15/16
G01R 15/18
H01J 37/32
H01L 21/67

Abstract:

An apparatus to estimate parameters of a radio frequency (RF) signal may include a voltage sensor configured to provide an indication of a voltage of the RF signal as well as a current sensor configured to provide an indication of current conducted by the RF signal. The apparatus may additionally include an analog-to-digital conversion module coupled to an output port of the voltage sensor and the current sensor, wherein the analog-to-digital converter is configured to provide digital representations of an instantaneous voltage and an instantaneous current of the RF signal. The apparatus may additionally include one or more processors configured to transform the digital representations of the instantaneous voltage and current into frequency domain representations of a complex voltage and complex current.

US Patent:

20200118856, Apr 16, 2020

Filed:

Dec 16, 2019

Appl. No.:

16/715926

Inventors:

- Fremont CA, US
David French - Lake Oswego OR, US
Sunil Kapoor - Vancouver WA, US
Yukinori Sakiyama - West Linn OR, US
George Thomas - Fremont CA, US

International Classification:

H01L 21/67
H01J 37/32
H01L 21/687

Abstract:

A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

US Patent:

20200075289, Mar 5, 2020

Filed:

Sep 4, 2018

Appl. No.:

16/121408

Inventors:

- Fremont CA, US
Karl Frederick Leeser - West Linn OR, US
David French - Portland OR, US
Sunil Kapoor - Vancouver WA, US
Aaron Bingham - Newberg OR, US
David Alan Metz - McMinnville OR, US
Brett Herzig - San Jose CA, US
Jacob L. Hiester - Newberg OR, US
Brian Knight - Beaverton OR, US

International Classification:

H01J 37/32
H01L 21/687

Abstract:

A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.

US Patent:

20180025930, Jan 25, 2018

Filed:

Jun 30, 2017

Appl. No.:

15/640053

Inventors:

- Fremont CA, US
David French - Lake Oswego OR, US
Sunil Kapoor - Vancouver WA, US
Yukinori Sakiyama - West Linn OR, US
George Thomas - Fremont CA, US

International Classification:

H01L 21/67
H01J 37/32

Abstract:

A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.