Hongxing Tang

age ~53

from Orange, CT

Also known as:
  • Hong X Tang
  • Tang Hongxing
  • Xing Tang Hong
  • G Tang
Phone and address:
221 Mulberry Ln, Orange, CT 06477

Hongxing Tang Phones & Addresses

  • 221 Mulberry Ln, Orange, CT 06477
  • North Haven, CT
  • New Haven, CT
  • Pasadena, CA
  • Danbury, CT

Us Patents

  • Sensors Based On Giant Planar Hall Effect In Dilute Magnetic Semiconductors

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  • US Patent:
    6910382, Jun 28, 2005
  • Filed:
    Jun 23, 2003
  • Appl. No.:
    10/602548
  • Inventors:
    Hongxing Tang - Pasadena CA, US
    Michael L. Roukes - Pasadena CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    G01L009/14
  • US Classification:
    73722, 73728, 73735, 257421, 365200
  • Abstract:
    Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.
  • On-Chip Magnetic Force Actuation Of Microcantilevers By Coplanar Coils

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  • US Patent:
    7191639, Mar 20, 2007
  • Filed:
    Apr 1, 2004
  • Appl. No.:
    10/815517
  • Inventors:
    Hongxing Tang - Pasadena CA, US
    Michael L. Roukes - Pasadena CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    G01N 29/02
  • US Classification:
    73 2406, 73 5441, 73 6149, 73 6179, 73 6453
  • Abstract:
    An on-chip coil is provided in a micromachined device for magnetic actuation of a nanoelectromechanical microcantilever. The novel geometry involves a three dimensional solenoid or planar coil carrying high current that generates a large enough magnetic field in its close proximity to a permalloy thin film patch or columnar magnet disposed on the distal end of the piezoresistive microcantilever to effectively interacts with the magnetic thin film deposited on the microcantilever. The device comprises an effective actuators which can be integrated with biofunctionalized cantilever arrays in hybrid semiconductor-microfluidics devices for the analysis and detection of biological analytes.
  • Sensors Based On Giant Planar Hall Effect In Dilute Magnetic Semiconductors

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  • US Patent:
    7249518, Jul 31, 2007
  • Filed:
    Feb 3, 2005
  • Appl. No.:
    11/049104
  • Inventors:
    Hongxing Tang - Pasadena CA, US
    Michael L. Roukes - Pasadena CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    G01L 9/10
  • US Classification:
    73722
  • Abstract:
    Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.
  • Strain Sensors Based On Nanowire Piezoresistor Wires And Arrays

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  • US Patent:
    7302856, Dec 4, 2007
  • Filed:
    Apr 16, 2004
  • Appl. No.:
    10/826007
  • Inventors:
    Hongxing Tang - Pasadena CA, US
    Michael L. Roukes - Pasadena CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    G01B 7/16
  • US Classification:
    73777
  • Abstract:
    A highly sensitive and ultra-high density array of electromechanical nanowires is fabricated. Nanowires are extremely sensitive to the strain induced by the attachment of biological and chemical species. Real-time detection is realized through piezoresistive transduction from the specially designed materials that form the nanowires. These specially designed materials include doped silicon or germanium, doped III-V semiconductors such as GaAs, GaN and InAs systems, and ultra-thin metal films.
  • Metallic Thin Film Piezoresistive Transduction In Micromechanical And Nanomechanical Devices And Its Application In Self-Sensing Spm Probes

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  • US Patent:
    7434476, Oct 14, 2008
  • Filed:
    Dec 14, 2004
  • Appl. No.:
    11/010578
  • Inventors:
    Hongxing Tang - Pasadena CA, US
    Mo Li - Pasadena CA, US
    Michael L. Roukes - Pasadena CA, US
  • Assignee:
    Califronia Institute of Technology - Pasadena CA
  • International Classification:
    G01B 7/16
  • US Classification:
    73777
  • Abstract:
    Thin metallic films are used as the piezoresistive self-sensing element in microelectromechanical and nanoelectromechanical systems. The specific application to AFM probes is demonstrated.
  • Metallic Thin Film Piezoresistive Transduction In Micromechanical And Nanomechanical Devices And Its Application In Self-Sensing Spm Probes

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  • US Patent:
    7617736, Nov 17, 2009
  • Filed:
    Jun 30, 2008
  • Appl. No.:
    12/164620
  • Inventors:
    Hongxing Tang - Pasadena CA, US
    Mo Li - Pasadena CA, US
    Michael L. Roukes - Pasadena CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    G01B 7/16
  • US Classification:
    73777, 73760
  • Abstract:
    Thin metallic films are used as the piezoresistive self-sensing element in microelectromechanical and nanoelectromechanical systems. The specific application to AFM probes is demonstrated.
  • Microscale Calorimeter

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  • US Patent:
    7762719, Jul 27, 2010
  • Filed:
    Apr 20, 2005
  • Appl. No.:
    11/578675
  • Inventors:
    Chung-Wah Fon - Pasadena CA, US
    Michael L. Roukes - Pasadena CA, US
    Wonhee Lee - Pasadena CA, US
    Hongxing Tang - Pasadena CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    G01K 17/00
  • US Classification:
    374 31, 422 51, 374208
  • Abstract:
    Microcalorimeters having low addendum heat capacities and attojoule/Kscale resolutions are provided. These microcalorimeters make use of very small calorimeter bodies composed of materials with very low heat capacities. Also provided are polymer-based microcalorimeters with thermally isolated reagent chambers. These microcalorimeters use a multi-layered polymer membrane structure to provide improved thermal isolation of a reagent chamber.
  • Biological Detection Based On Differentially Coupled Nanomechanical Systems Using Self-Sensing Cantilevers With Attonewton Force Resolution

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  • US Patent:
    7959873, Jun 14, 2011
  • Filed:
    Jul 20, 2006
  • Appl. No.:
    11/491394
  • Inventors:
    Michael Roukes - Pasadena CA, US
    Hongxing Tang - Pasadena CA, US
    Jessica Arlett - S Pasadena CA, US
    James Maloney - Pasadena CA, US
    Benjamin Gudlewski - Pasadena CA, US
  • Assignee:
    California Institute of Technology - Pasadena CA
  • International Classification:
    G01N 33/00
  • US Classification:
    422400, 422402, 422 681, 422 8205
  • Abstract:
    A biosensor is comprised of a free and a biofunctionalized recognition self-sensing nanocantilever, a dock adjacent to the ends of the nanocantilevers, and a gap between the nanocantilevers and dock. The self-sensing cantilevers each include a semiconductor piezoresistor defined in a pair of legs about which the cantilevers flex. A bias power or current is applied to the piezoresistor. The sensitivity of the cantilevers is optimized for a given ambient temperature and geometry of the cantilevers and dock by minimizing the force spectral density, S, of the cantilevers to determine the optimum bias power, P. A sub-aN/√Hz force sensitivity is obtained by scaling down the dimensions of the cantilevers and supplying an optimum bias power as a function of temperature and geometry.

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