Hoon Min Kim

US Patent:

8637390, Jan 28, 2014

Filed:

May 26, 2011

Appl. No.:

13/116794

Inventors:

Seshadri Ganguli - Sunnyvale CA, US
Sang Ho Yu - Cupertino CA, US
Wei Ti Lee - San Jose CA, US
Hoon Kim - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Yu Lei - San Jose CA, US
Kevin Moraes - Fremont CA, US
Xianmin Tang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438591, 438592

Abstract:

Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

US Patent:

8642468, Feb 4, 2014

Filed:

Apr 25, 2011

Appl. No.:

13/093710

Inventors:

Seshadri Ganguli - Sunnyvale CA, US
Srinivas Gandikota - Santa Clara CA, US
Yu Lei - San Jose CA, US
Xinliang Lu - Fremont CA, US
Sang Ho Yu - Cupertino CA, US
Hoon Kim - Santa Clara CA, US
Paul F. Ma - Santa Clara CA, US
Mei Chang - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Patricia M. Liu - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438648, 438582, 438595, 438656, 438683, 438685, 42724919, 257407, 257761, 257E2119

Abstract:

Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

US Patent:

20110312148, Dec 22, 2011

Filed:

Jun 8, 2011

Appl. No.:

13/155520

Inventors:

HOON KIM - San Jose CA, US
SANG HO YU - Cupertino CA, US
WEI TI LEE - San Jose CA, US
SESHADRI GANGULI - Sunnyvale CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/02
B82Y 40/00

US Classification:

438381, 977890, 257E21008

Abstract:

Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.

US Patent:

20120012465, Jan 19, 2012

Filed:

Jun 23, 2011

Appl. No.:

13/167001

Inventors:

HOON KIM - San Jose CA, US
WEI TI LEE - San Jose CA, US
SANG HO YU - Cupertino CA, US
SESHADRI GANGULI - Sunnyvale CA, US
SANG HYEOB LEE - Fremont CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C25D 5/02

US Classification:

205131

Abstract:

Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).

US Patent:

20120141667, Jun 7, 2012

Filed:

Dec 9, 2011

Appl. No.:

13/315906

Inventors:

HOON KIM - San Jose CA, US
SANG HO YU - Cupertino CA, US
SESHADRI GANGULI - Sunnyvale CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C23C 16/06
C25D 5/02

US Classification:

427123, 205131

Abstract:

Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and the bottom surface of the opening, the layer having a first surface adjacent to the sidewall and bottom surface of the opening and a second surface opposite the first surface, wherein the second surface comprises predominantly at least one of ruthenium (Ru) or cobalt (Co) and wherein a predominant quantity of manganese (Mn) in the layer is not disposed proximate the second surface; and depositing a conductive material on the layer to fill the opening.

US Patent:

20130146468, Jun 13, 2013

Filed:

Dec 8, 2011

Appl. No.:

13/314926

Inventors:

HOON KIM - Santa Clara CA, US
SANG HYEOB LEE - Fremont CA, US
WEI TI LEE - San Jose CA, US
SESHADRI GANGULI - Sunnyvale CA, US
SANG HO YU - Cupertino CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C23C 28/02
C23C 16/56
B05D 5/12
C23C 16/44

US Classification:

205186, 4272481, 4272557, 427123

Abstract:

Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.

US Patent:

20220388276, Dec 8, 2022

Filed:

Apr 8, 2022

Appl. No.:

17/716911

Inventors:

- Cupertino CA, US
Hoon Sik Kim - San Jose CA, US
Yuxi Zhao - Sunnyvale CA, US
Terry C Lam - Mountain View CA, US
Yasmin F Afsar - San Jose CA, US
Supriya Goyal - San Jose CA, US
Paul S Drzaic - Morgan Hill CA, US

International Classification:

B32B 7/12
H05K 5/00
H05K 5/03
C09J 9/00
C09J 7/00

Abstract:

In devices with flexible displays, multilayer adhesive stacks may be included. A multilayer adhesive may attach a flexible display panel to the display cover layer in an electronic device. Including multiple layers of adhesive in the adhesive stack (as opposed to a single layer) provides more degrees of freedom for the tuning and optimization of the properties of the adhesive stack. The multilayer adhesive stack therefore has better performance than if only a single layer of adhesive is used. The multilayer adhesive stack may include one or more layers of soft adhesive, hard adhesive, hard elastomer, hard polymer, and/or glass to optimize the mechanical and optical performance of the multilayer adhesive stack. Soft adhesive layers may be included to optimize lateral decoupling (e.g., during folding and unfolding) of the adhesive stack. Harder layers may be included to provide rigidity and prevent denting during impact events.

US Patent:

20220375388, Nov 24, 2022

Filed:

May 3, 2022

Appl. No.:

17/735843

Inventors:

- Cupertino CA, US
Hyunwoo Nho - Palo Alto CA, US
Hoon Sik Kim - Los Gatos CA, US
Shatam Agarwal - San Jose CA, US
Mahdi Farrokh Baroughi - Santa Clara CA, US

International Classification:

G09G 3/20
G09G 3/00

Abstract:

The present disclosure relates to systems and methods to control brightness and color output in foldable displays. A foldable electronic display may, when folded, includes a first part in a first plane and a second part in a second plane different from the first plane. A brightness or color setting of the first part may be controlled independently of a brightness or color setting of the second part.