Chung Hsin Chen from Elmhurst, NY, age 72

Resumes

Chung Chen Fresh Meadows, NY

view source

Work:

International Shoppes in JFK

Sep 2012 to 2000
Sales Representative Chinese School of Queens Music School

2007 to 2008
Bible Teacher Chinese School of Reformed Church of Newtown

1999 to 2005
Chinese Teacher Chinese School of Faith Bible Church

1998 to 1999
Chinese & after School Teacher; Pianist Immigration and Investment LLC

1993 to 1996
Leader ELLE Taipei Edition

1992 to 1993
Translator and Editor Quanta Foods

1991 to 1992
Secretary in Department of Real Estate Development

Education:

Tankang University
1987 to 1991
Bachelor of Art in French

Medicine Doctors

Chung Q. Chen

view source

Specialties:

Diagnostic Radiology

Work:

Apex Radiology Medical Group
890 W Stetson Ave STE B, Hemet, CA 92543
9515376002 (phone), 9515376013 (fax)

Hemet Valley Imaging
1001 E Latham Ave STE G, Hemet, CA 92543
9516589243 (phone), 9517655415 (fax)

Education:

Medical School
Taipei Med Coll, Taipei, Taiwan (385 04 Prior 1/71)
Graduated: 1970

Languages:

Chinese
English
Spanish

Description:

Dr. Chen graduated from the Taipei Med Coll, Taipei, Taiwan (385 04 Prior 1/71) in 1970. He works in Hemet, CA and 1 other location and specializes in Diagnostic Radiology. Dr. Chen is affiliated with Hemet Valley Medical Center, Kaiser Medical Center Moreno Valley, Menifee Valley Medical Center and Victor Valley Global Medical Center.

License Records

Chung Kuang Chen Md

License #:

29403 - Active

Category:

Medicine

Issued Date:

Jul 15, 2016

Effective Date:

Jul 15, 2016

Expiration Date:

Oct 1, 2018

Type:

Physician

Name / Title

Company / Classification

Phones & Addresses

Chung C. Chen
Owner

Cyril Dental Lab
Dental Laboratory

18 Columbia Ave, Bergenfield, NJ 07621
2014390026

Chung Chen
President

Hin Han Restaurant Inc
Eating Place

46 Watchung Ave, Plainfield, NJ 07060
9087568367

Chung C. Chen
President

Titan Implant Inc
Dentist's Office · Alterations

18 Columbia Ave, Bergenfield, NJ 07621
2014390026, 2017711122

Chung Chen
Owner

LSW Laundromat
Coin-Operated Laundry

6407 Broadway, Flushing, NY 11377
7185330350

Chung Chen
Partner

Modern Bagel Cafe
Retail Bakery

23-59 Fair Lawn Ave, Fair Lawn, NJ 07410
2017940049

Chung Chen
Principal

Top Tutoring Office
School/Educational Services

45 Riv Dr S, Jersey City, NJ 07310

Chung C. Chen
Principal

Proswingez LLC
Business Services at Non-Commercial Site

85 E Madison Ave, Dumont, NJ 07628

Chung M. Chen
Chairman of the Board, Chb

GOLDEN PROFIT TRADING, INC
Whol Nondurable Goods · Gift Shops

147 Mott St, New York, NY 10013
2129650503

Us Patents

Majority Carrier Photodetector
view source
US Patent:

44713703, Sep 11, 1984
Filed:

Apr 24, 1981
Appl. No.:

6/257355
Inventors:

Chung Y. Chen - Scotch Plains NJ
Alfred Y. Cho - Summit NJ
Assignee:

AT&T Bell Laboratories - Murray Hill NJ
International Classification:

H01L 29161
H01L 2714
H01L 2912
US Classification:

357 30
Abstract:

A majority carrier photodetector has high sensitivity and fast response times. The photodetector comprises a thin highly doped layer surrounded on either side by two nominally undoped layers which are completely depleted at thermal equilibrium.

High Speed Bias-Free Photodetector
view source
US Patent:

45531552, Nov 12, 1985
Filed:

Mar 22, 1984
Appl. No.:

6/592724
Inventors:

Chung Y. Chen - Scotch Plains NJ
Alfred Y. Cho - Summit NJ
Assignee:

AT&T Bell Laboratories - Murray Hill NJ
International Classification:

H01L 2714
US Classification:

357 30
Abstract:

A high speed bias-free photodetector which capacitively couples the output signal to an external circuit is described.

Mesfet Using A Shallow Junction Gate Structure On Gainas
view source
US Patent:

44713673, Sep 11, 1984
Filed:

Dec 4, 1981
Appl. No.:

6/327551
Inventors:

Chung Y. Chen - Scotch Plains NJ
Alfred Y. Cho - Summit NJ
Assignee:

AT&T Bell Laboratories - Murray Hill NJ
International Classification:

H01L 2980
H01L 2956
US Classification:

357 22
Abstract:

A thin and highly doped Ga. sub. 47 In. sub. 53 As layer disposed on a Ga. sub. 47 In. sub. 53 As layer increases the barrier height and produces useful device characteristics. For example, the structure may be used as the gate electrode in an InGaAs field effect transistor.

Modulation-Doped Photodetector
view source
US Patent:

47393858, Apr 19, 1988
Filed:

Jan 12, 1987
Appl. No.:

7/005357
Inventors:

Clyde G. Bethea - Plainfield NJ
Chung Y. Chen - Scotch Plains NJ
Alfred Y. Cho - Summit NJ
Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:

H01L 2980
H01L 3110
H01L 2940
H01L 2914
US Classification:

357 30
Abstract:

A modulation-doped field effect photodetector has a fast response time.

Integrated Devices Including Cleaved Semiconductor Lasers
view source
US Patent:

47072199, Nov 17, 1987
Filed:

May 14, 1985
Appl. No.:

6/733868
Inventors:

Chung Y. Chen - New Providence NJ
Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506
US Classification:

156644
Abstract:

A new technique called stop cleaving permits semiconductor lasers having etched mirrors to be fabricated on a common substrate with other optical or electronic components such as photodetectors and field-effect transistors.

Gallium Arsenide On Gallium Indium Arsenide Schottky Barrier Device
view source
US Patent:

47454474, May 17, 1988
Filed:

Jun 14, 1985
Appl. No.:

6/745294
Inventors:

Chung Y. Chen - New Providence NJ
Alfred Y. Cho - Summit NJ
Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:

H01L 29201
H01L 2956
H01L 2980
US Classification:

357 22
Abstract:

Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.

Depletion Stop Transistor
view source
US Patent:

47500255, Jun 7, 1988
Filed:

Jan 30, 1986
Appl. No.:

6/823985
Inventors:

Chung Y. Chen - Scotch Plains NJ
Alfred Y. Cho - Summit NJ
Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:

H01L 29205
H01L 2970
US Classification:

357 34
Abstract:

We have found that transistors have desirable device characteristics when the base region is composed of a lightly doped layer near the emitter junction and a heavily doped layer near the collector junction. The edge of the depletion region at the emitter-base junction is designed to stop in the lightly doped base region.