Jong S Lee

US Patent:

6728140, Apr 27, 2004

Filed:

Dec 5, 2001

Appl. No.:

10/011157

Inventors:

Kyung Joon Han - Palo Alto CA
Joo Weon Park - Pleasanton CA
Dung Tran - San Jose CA
Steve K. Hsia - San Jose CA
Jong Seuk Lee - Palo Alto CA
Dae Hyun Kim - Fremont CA

Assignee:

NexFlash Technologies, Inc. - San Jose CA

International Classification:

G11C 1604

US Classification:

36518524, 36518526, 3651853, 36518529

Abstract:

A convergence signal includes a series of voltage pulses used to perform a convergence procedure in one or more flash EEPROM memory cells (transistors). In one instance subsequent voltage pulses in the convergence signal each have a higher voltage than the preceding pulse. In another instance, subsequent voltage pulses in the convergence signal each have a longer duration than the preceding pulse. An integrated circuit includes an array of memory cells and an erase control unit which controls the application of the convergence signal to one or more memory cells. The integrated circuit may be either serial or parallel flash EEPROM in which bulk, sector, or page mode erasing is used.

US Patent:

6873004, Mar 29, 2005

Filed:

Feb 4, 2003

Appl. No.:

10/358645

Inventors:

Kyung Joon Han - Palo Alto CA, US
Steve K. Hsia - San Jose CA, US
Joo Weon Park - Pleasanton CA, US
Jong Seuk Lee - Palo Alto CA, US

Assignee:

NexFlash Technologies, Inc. - San Jose CA

International Classification:

H01L029/788

US Classification:

257315, 257E293, 257 6, 438266, 438286, 438302, 438525

Abstract:

An asymmetrical virtual ground single transistor floating gate memory cell has a floating gate that overlies a channel region in a p-well, the channel region lying between a heavily doped n+ drain region and a lightly doped n− source region. A heavily doped p+ region known as a “halo” is disposed in the channel adjacent the heavily doped n+ drain. The floating gate is spaced away from the channel region by a generally thin tunnel oxide. A lightly doped source with a graded source/channel junction reduces source side CHE generation. In one variation, a thicker oxide between the source and the floating gate reduces CHE injection from the source side. A heavily doped drain with a halo implant in the channel adjacent the drain enhances drain side CHE generation.

US Patent:

7094089, Aug 22, 2006

Filed:

Mar 12, 2004

Appl. No.:

10/799403

Inventors:

Bartley K. Andre - Menlo Park CA, US
Jonathan P. Ive - San Francisco CA, US
Jong Min Lee - San Francisco CA, US
Kan Lim - Sunnyvale CA, US

Assignee:

Apple Computer, Inc. - Cupertino CA

International Classification:

H01R 21/00

US Classification:

439218, 439607

Abstract:

A DC connector arrangement is disclosed. The DC connector arrangement includes a DC plug and a DC receptacle that are configured to engage one another at more than one position. The DC plug and DC receptacle are also configured with a small contact distance to minimize the insertion and extraction forces that occur between the DC plug and the DC receptacle.

US Patent:

8093576, Jan 10, 2012

Filed:

Nov 30, 2009

Appl. No.:

12/627128

Inventors:

Jong Won Lee - San Francisco CA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 47/00

US Classification:

257 4, 257 5, 257 42, 257E45002, 438102, 438 95, 438626

Abstract:

A method of forming a semiconductor device may comprise forming a memory portion, forming a carbon film, depositing insulation to at least partially cover the carbon film, and terminating patterned removal of the insulation at the carbon film during a fabrication process.

US Patent:

8581475, Nov 12, 2013

Filed:

Oct 24, 2012

Appl. No.:

13/659875

Inventors:

In Seo Kim - Yangjoo-si, KR
Gui Hyeon Moon - Torrance CA, US
Jong Ho Lee - Torrance CA, US
Young Il Jung - Torrance CA, US
Sok Hwan Han - Torrance CA, US

International Classification:

H01L 41/113

US Classification:

310339

Abstract:

Provided is a power generating apparatus using piezoelectric elements, which can increase an amount of electricity generated in the piezoelectric elements and can extend the life of the piezoelectric elements. The power generating apparatus includes: a plurality of piezoelectric elements; a main body in which the piezoelectric elements are received and fixed, with spaced apart from one another, so as to protect the piezoelectric elements; a piezoelectric element support reciprocatingly installed in the main body to support the piezoelectric elements such that the piezoelectric elements are deformed by a reciprocating motion of the piezoelectric element support; a driving unit provided in the main body to operate the piezoelectric element support; and a power transmission unit connecting the driving unit to the piezoelectric element support, such that the piezoelectric element support is reciprocated by a driving force of the driving unit.

US Patent:

20080222349, Sep 11, 2008

Filed:

Mar 6, 2008

Appl. No.:

12/043628

Inventors:

Jong Kook Lee - Simi Valley CA, US
Franz Michael Schuette - Sunnyvale CA, US

Assignee:

OCZ TECHNOLOGY GROUP INC. - Sunnyvale CA

International Classification:

G06F 12/00

US Classification:

711103

Abstract:

A flash drive and method of transferring data from a system to a flash drive. The flash drive includes a casing, a plurality of flash memory devices within the casing, each of the flash memory devices having multilevel cells, an IEEE 1394 interface controller within the casing, coupled to the flash memory devices, and interfacing with the flash memory devices for interleaved multichannel access to and from at least two of the flash memory devices, and at least one IEEE 1394 interface connector projecting from the casing for interfacing the flash memory devices with a system through the controller. The method entails coupling a plurality of multilevel cell flash memory devices to a system through an IEEE 1394 interface controller and at least one IEEE 1394 interface connector, and performing interleaved multichannel access to and from at least two of the flash memory devices.

US Patent:

20100327413, Dec 30, 2010

Filed:

May 2, 2008

Appl. No.:

12/595234

Inventors:

Jong Pil Lee - San Ramon CA, US
Seiji Kawaguchi - San Jose CA, US
Camelia Rusu - Fremont CA, US
Zhisong Huang - Fremont CA, US
Mukund Srinivasan - Fremont CA, US
Eric Hudson - Berkeley CA, US
Aaron Eppler - Fremont CA, US

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

H01L 29/00
H01L 21/3065
C23F 1/08
H01L 21/306

US Classification:

257618, 438710, 438725, 15634524, 257E21218, 257E29001

Abstract:

A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O.

US Patent:

20120223621, Sep 6, 2012

Filed:

Jun 29, 2011

Appl. No.:

13/172377

Inventors:

Ki Il KIM - Los Angeles CA, US
Young K. Kim - Los Angeles CA, US
Jong Ho Lee - Cerritos CA, US
Tae Wook Kwon - Rowland Heights CA, US
Gui Hyeon Moon - Buena Park CA, US

International Classification:

H02N 2/18

US Classification:

310339

Abstract:

Provided is a system for producing electricity, the system having an object configured to move in at least one of, an upward direction, a downward direction, a left direction, a right direction, an eccentric motion, a straight line, or a circular motion; and at least one piezoelectric element attached to the object, wherein, when the object is moving, the object is configured to apply a pressing force to the at least one piezoelectric element to produce the electricity.

Address:

449 S Kingsley Dr APT 113, Los Angeles, CA 90020

Phone:

2133691972

VIN:

JTHBK1EG2C2506628

Make:

LEXUS

Model:

ES 350

Year:

2012

Address:

3311 W 3 St APT 218, Los Angeles, CA 90020

Phone:

2132208301

VIN:

2T3ZF4DV1AW052382

Make:

TOYOTA

Model:

RAV4

Year:

2010

Address:

830 S Hl St STE M112, Los Angeles, CA 90014

VIN:

KMHGC4DE4AU095851

Make:

HYUNDAI

Model:

GENESIS

Year:

2010

Address:

818 S Lucerne Blvd APT 302, Los Angeles, CA 90005

VIN:

JTHBK1EGXA2370746

Make:

LEXUS

Model:

ES 350

Year:

2010

Address:

1819 S Soto St, Los Angeles, CA 90023

VIN:

WDDNG71X57A104029

Make:

MERCEDES-BENZ

Model:

S-CLASS

Year:

2007