Robert H Small

US Patent:

6498131, Dec 24, 2002

Filed:

Aug 7, 2000

Appl. No.:

09/632899

Inventors:

Robert J. Small - Dublin CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C11D 168

US Classification:

510175, 510178, 510505

Abstract:

The present invention relates to chemical compositions and methods of use for cleaning CMP equipment, including the interiors of delivery conduits carrying CMP slurry to the necessary sites. The chemical compositions of the present invention are also useful for post-CMP cleaning of the wafer itself. Three classes of cleaning compositions are described, all of which are aqueous solutions. One class operates in a preferable pH range from about 11 to about 12 and preferably contains one or more non-ionic surfactants, one or more simple amines, a surfactant or sticking agent, such as one or more soluble dialcohol organic compounds, and one or more quaternary amines. A second class of cleaning composition operates in a preferable pH range of approximately 8. 5 and contains one or more of citric acid, lactic acid, and oxalic acid. A third class of compositions is acidic, having a preferable pH range from about 1.

US Patent:

6546939, Apr 15, 2003

Filed:

Nov 3, 2000

Appl. No.:

09/704688

Inventors:

Robert J. Small - Dublin CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

B08B 304

US Classification:

134 13, 134 12, 134 3, 134 39, 510175, 510176, 510178, 510499, 510504, 510245, 510254, 438692

Abstract:

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3. 5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.

US Patent:

6635186, Oct 21, 2003

Filed:

Jan 7, 1999

Appl. No.:

09/226996

Inventors:

Robert J. Small - Dublin CA
Laurence McGhee - Duntocher, GB
David J. Maloney - Livermore CA
Maria L. Peterson - Menlo Park CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 21302

US Classification:

216 88, 216 89, 216 99, 216100, 216108, 252 791, 252 792, 438692, 438693

Abstract:

A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material.

US Patent:

6638326, Oct 28, 2003

Filed:

Sep 25, 2001

Appl. No.:

09/965233

Inventors:

Robert J. Small - Dublin CA
Maria Peterson - Belmont CA
Tuan Truong - San Jose CA
Melvin Keith Carter - Los Gatos CA
Lily Yao - Newark CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C09G 102

US Classification:

51307, 51308, 51309, 106 3, 252 792, 252 794, 510175, 510397, 510402

Abstract:

The present invention relates to compositions for the chemical mechanical planarization (âCMPâ) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

US Patent:

6756308, Jun 29, 2004

Filed:

Feb 13, 2001

Appl. No.:

09/783069

Inventors:

Robert J. Small - Dublin CA
Xiaowei Shang - Sunnyvale CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 21302

US Classification:

438692, 438691

Abstract:

The present invention relates to the use of ozone (O ) as a reagent in chemical mechanical planarization either in aqueous solution or as a gas directly impinging on the surface to be planarized. An aqueous solution containing ozone may optionally contain abrasive particles and/or additional CMP reagents co-dissolved with the ozone including carbonate and bicarbonate anions, and organic acids such as formic, oxalic, acetic and glycol. Abrasives that may be added include alumina, silica, spinel, ceria, zirconia. Typical concentrations of ozone aqueous solution are in the range from approximately 1 part-per-million up to saturation. Ammonium salts, particularly ammonium carbonate, facilitate planarization in cooperation with ozone-containing aqueous solution. Low k dielectric materials, organic as well as inorganic, and difficult to oxidize metals can be planarized with ozone reagents pursuant to the present invention.

US Patent:

6777380, Aug 17, 2004

Filed:

Jul 10, 2001

Appl. No.:

09/903064

Inventors:

Robert J. Small - Dublin CA
Bakul P. Patel - Pleasanton CA
Wai Mun Lee - Fremont CA
Douglas Holmes - Bridge of Weir, GB
Jerome Daviot - Glasgow, GB
Chris Reid - Glasgow, GB

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

G03C 500

US Classification:

510176, 510175, 510245, 430329, 134 13, 252 791

Abstract:

A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0. 01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

US Patent:

6852682, Feb 8, 2005

Filed:

Oct 16, 2002

Appl. No.:

10/273100

Inventors:

Robert J. Small - Dublin CA, US

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C11D001/68

US Classification:

510175, 510178, 510505

Abstract:

The present invention relates to chemical compositions and methods of use for cleaning CMP equipment, including the interiors of delivery conduits caring CMP slurry to the necessary sites. The chemical compositions of the present invention are also useful for post-CMP cleaning of the wafer itself. Three classes of cleaning compositions are described, all of which are aqueous solutions. One class operates in a preferable pH range from about 11 to about 12 and preferably contains one or more non-ionic surfactants, one or more simple amines, a surfactant or sticking agent, such as one or more soluble dialcohol organic compounds, and one or more quaternary amines. A second class of cleaning composition operates in a preferable pH range of approximately 8. 5 and contains one or more of citric acid, lactic acid, and oxalic acid. A third class of compositions is acidic, having a preferable pH range from about 1.

US Patent:

6866792, Mar 15, 2005

Filed:

Dec 12, 2001

Appl. No.:

10/017934

Inventors:

Robert J. Small - Dublin CA, US
Maria Peterson - Belmont CA, US
Tuan Truong - San Jose CA, US
Melvin Keith Carter - Los Gatos CA, US
Lily Yao - Newark CA, US

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C09K013/00
C09K013/06

US Classification:

252 791, 252 794, 438692

Abstract:

The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4] nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.