Robin W Scott

US Patent:

7871937, Jan 18, 2011

Filed:

Dec 9, 2008

Appl. No.:

12/331322

Inventors:

Robin Charis Scott - Chandler AZ, US
Matt Johnson - Tucson AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

H01L 21/31

US Classification:

438759, 438660, 438680, 438723, 257E21002

Abstract:

Methods and systems are provided for low pressure baking to remove impurities from a semiconductor surface prior to deposition. Advantageously, the short, low temperature processes consume only a small portion of the thermal budget, while still proving effective at removing interfacial oxygen from the semiconductor surface. The methods and systems are particularly well suited for treating semiconductor surfaces before epitaxy.

US Patent:

20130164874, Jun 27, 2013

Filed:

Dec 19, 2012

Appl. No.:

13/720524

Inventors:

Chantal Arena - Mesa AZ, US
Robin Scott - Chandler AZ, US
Claudio Canizares - Chandler AZ, US

Assignee:

Soitec - Crolles Cedex

International Classification:

H01L 31/18
H01L 33/00
H01L 21/36

US Classification:

438 47, 438478, 438 94

Abstract:

Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.

US Patent:

20130181308, Jul 18, 2013

Filed:

Dec 19, 2012

Appl. No.:

13/720284

Inventors:

Chantal Arena - Mesa AZ, US
Robin Scott - Chandler AZ, US
Claudio Canizares - Chandler AZ, US

Assignee:

Soitec - Crolles Cedex

International Classification:

H01L 33/32

US Classification:

257431, 438 93

Abstract:

Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a vapor phase epitaxy (HVPE) chamber.

US Patent:

20220352006, Nov 3, 2022

Filed:

Apr 27, 2022

Appl. No.:

17/730967

Inventors:

- Almere, NL
Junwei Su - Tempe AZ, US
Xing Lin - Chandler AZ, US
Alexandros Demos - Scottsdale AZ, US
Rutvij Naik - Tempe AZ, US
Wentao Wang - Chandler AZ, US
Matthew Goodman - Chandler AZ, US
Robin Scott - Phoenix AZ, US
Robinson James - Phoenix AZ, US
Caleb Miskin - Mesa AZ, US

International Classification:

H01L 21/687
C23C 16/52
C23C 16/458

Abstract:

A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.