Steven Leslie Roberts

US Patent:

6830650, Dec 14, 2004

Filed:

Jul 12, 2002

Appl. No.:

10/194526

Inventors:

Gregory A. Roche - Fort Collins CO
Leonard J. Mahoney - Fort Collins CO
Daniel C. Carter - Fort Collins CO
Steven J. Roberts - Severance CO

Assignee:

Advanced Energy Industries, Inc. - Fort Collins CO

International Classification:

H05H 100

US Classification:

15634524, 15634528, 118712

Abstract:

There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

US Patent:

7192505, Mar 20, 2007

Filed:

Sep 27, 2004

Appl. No.:

10/951162

Inventors:

Gregory A. Roche - Fort Collins CO, US
Leonard J. Mahoney - Fort Collins CO, US
Daniel C. Carter - Fort Collins CO, US
Steven J. Roberts - Severance CO, US

Assignee:

Advanced Plasma, Inc. - Santa Clara CA

International Classification:

H01L 21/00
C23C 16/00

US Classification:

15634528, 15634524, 15634525, 15634526, 118712, 118713, 118714, 118715, 438 7, 438 9, 438 10, 438 11, 438 16, 438 18, 216 59, 216 67, 31511101, 20429803, 20419213

Abstract:

There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

US Patent:

20050011611, Jan 20, 2005

Filed:

Aug 17, 2004

Appl. No.:

10/920138

Inventors:

Leonard Mahoney - Fort Collins CO, US
Daniel Carter - Fort Collins CO, US
Steven Roberts - Severance CO, US
Gregory Roche - Fort Collins CO, US

International Classification:

C23F001/00

US Classification:

156345240

Abstract:

There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, optical emission sensors, or other sensors of plasma or surface properties. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

US Patent:

20050039852, Feb 24, 2005

Filed:

Sep 27, 2004

Appl. No.:

10/951084

Inventors:

Gregory Roche - Fort Collins CO, US
Leonard Mahoney - Fort Collins CO, US
Daniel Carter - Fort Collins CO, US
Steven Roberts - Severance CO, US

International Classification:

C23F001/00
H01L021/306

US Classification:

156345240

Abstract:

There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

US Patent:

20050284570, Dec 29, 2005

Filed:

Jun 24, 2004

Appl. No.:

10/875954

Inventors:

Daniel Doran - Fort Collins CO, US
Leonard Mahoney - Fort Collins CO, US
Steven Roberts - Severance CO, US
Gregory Roche - Fort Collins CO, US

International Classification:

C23F001/00
G01L021/30

US Classification:

156345240, 216059000

Abstract:

A diagnostic plasma measurement device is provided having sensors and features disposed using pattern transfer fabrication techniques. A measurement device comprises a primary substrate with sensors for measuring plasma or surface properties disposed by a stepped pattern transfer technique, such as step-and-repeat photolithography, about the surface of the probe. Sensor fields include sensors that measure physical and electrical properties of a plasma, as well as sensors that measure properties of the wafer surface. Fields or components for processing electronics, electrical interconnections, memory, photovoltaic power, and wireless communication are also provided. By utilizing pattern transfer fabrication techniques, the invention generally provides for reduced risks of contamination of a plasma processing environment and increased manufacturability and reliability of the completed sensor device.

Address:

6576 Woodsworth Ave, Las Vegas, NV 89108

VIN:

5NMSH73E37H019220

Make:

HYUNDAI

Model:

SANTA FE

Year:

2007