Tom H Yu

US Patent:

6468404, Oct 22, 2002

Filed:

Jan 23, 2001

Appl. No.:

09/768863

Inventors:

Jean Qing Lu - Palo Alto CA
Tom Yu - San Leandro CA
Jeffrey Tobin - Mountain View CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C 1435

US Classification:

2041923, 20429816, 20419212, 20419215, 20419222

Abstract:

A PVD system comprises a hollow cathode magnetron with a capability of producing a high magnetic field for PVD and a low magnetic field for pasting. The high magnetic field is used for PVD and causes an optimal uniform film to form on a substrate but redeposits some metals onto a top portion of a target within the magnetron. The low magnetic field erodes redeposited materials from a top portion of a target within the magnetron.

US Patent:

6471831, Oct 29, 2002

Filed:

Jan 9, 2001

Appl. No.:

09/757552

Inventors:

Jean Qing Lu - Palo Alto CA
Tom Yu - San Leandro CA
Linda Stenzel - Mt. Hermon CA
Jeffrey Tobin - Mountain View CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C 1435

US Classification:

20419212, 20429812, 20429814, 20429816, 20429817, 20429818, 2042982, 20429821, 20429822, 20429811

Abstract:

A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

US Patent:

7645696, Jan 12, 2010

Filed:

Jun 22, 2006

Appl. No.:

11/473618

Inventors:

Alexander Dulkin - Sunnyvale CA, US
Anil Vijayendran - San Jose CA, US
Tom Yu - Santa Clara CA, US
Daniel R. Juliano - Santa Clara CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/00

US Classification:

438637, 438653, 438672, 438687, 438695, 438760, 257E21169, 257E21171, 257E21582, 257E21584, 257E21592

Abstract:

Methods of depositing thin seed layers that improve continuity of the seed layer as well as adhesion to the barrier layer are provided. According to various embodiments, the methods involve performing an etchback operation in the seed deposition chamber prior to depositing the seed layer. The etch step removes barrier layer overhang and/or oxide that has formed on the barrier layer. It some embodiments, a small deposition flux of seed atoms accompanies the sputter etch flux of argon ions, embedding metal atoms into the barrier layer. The embedded metal atoms create nucleation sites for subsequent seed layer deposition, thereby promoting continuous seed layer film growth, film stability and improved seed layer-barrier layer adhesion.