Eugene Smargiassi - San Jose CA Aaron Hunter - Santa Cruz CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
F27B 514
US Classification:
219390, 219405, 219411, 118724, 118 501, 392416
Abstract:
An apparatus and method for thermally processing a substrate employs lift pin for supporting or contacting the substrate while conveying radiation from the substrate to a detector and/or processor through a hollow member. The lift pin comprises a contact member flexibly mounted on the hollow member to adjust to the angle of the substrate. By conforming the orientation of the contact member to the angle of the substrate, accurate detection and processing of the substrate may be performed.
Thermally Matched Support Ring For Substrate Processing Chamber
Joseph M. Ranish - San Jose CA, US Aaron Muir Hunter - Santa Cruz CA, US Balasubramanian Ramachandran - Santa Clara CA, US Jallepally Ravi - Santa Clara CA, US Sundar Ramamurthy - Fremont CA, US Vedapuram S. Achutharaman - San Jose CA, US Khurshed Sorabji - San Jose CA, US
A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass T, and the radiation absorption surface has an absorptivity A and a surface area S, such that the ratio (A×S)/Tis from about 4×10mK/J to about 9×10mK/J.
Dean Jennings - San Ramon CA, US Joseph M. Ranish - San Jose CA, US Brian Haas - San Jose CA, US Ajit Balakrishna - Sunnyvale CA, US Sundar Ramamurthy - Fremont CA, US Aaron Hunter - Santa Cruz CA, US Mark Yam - Monte Sereno CA, US
In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.
Balasubramanian Ramachandran - Santa Clara CA, US Joseph Michael Ranish - San Jose CA, US Sundar Ramamurthy - Fremont CA, US Raman Achutharaman - San Jose CA, US Brian Haas - San Jose CA, US Aaron Hunter - Santa Cruz CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01K 5/00 G01K 7/00 G01K 11/00
US Classification:
702130
Abstract:
Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
Adaptive Control Method For Rapid Thermal Processing Of A Substrate
Joseph Michael Ranish - San Jose CA, US Tarpan Dixit - San Francisco CA, US Dean Jennings - Beverly MA, US Balasubramanian Ramachandran - Santa Clara CA, US Aaron Hunter - Santa Cruz CA, US Wolfgang Aderhold - Cupertino CA, US Bruce Adams - Portland CA, US Wen Teh Chang - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01L 9/06
US Classification:
73727, 734321
Abstract:
The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
Backside Rapid Thermal Processing Of Patterned Wafers
Wolfgang Aderhold - Cupertino CA, US Sundar Ramamurthy - Fremont CA, US Aaron Hunter - Santa Cruz CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
F27B 5/14 A21B 2/00
US Classification:
219390, 392416
Abstract:
Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
Lamp Array For Thermal Processing Exhibiting Improved Radial Uniformity
Joseph M. Ranish - San Jose CA, US Corina E. Tanasa - Mountain View CA, US Sundar Ramamurthy - Fremont CA, US Claudia Lai - Sunnyvale CA, US Ramachandran Balasubramanian - Santa Clara CA, US Aaron M. Hunter - Santa Cruz CA, US Agus Tjandra - San Jose CA, US Norman Tam - San Jose CA, US
A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.
Film Formation Apparatus And Methods Including Temperature And Emissivity/Pattern Compensation
A film formation system has a processing chamber bounded by sidewalls and a top cover. In one embodiment, the top cover has a reflective surface for reflecting radiant energy back onto a substrate , pyrometers for measuring the temperature of the substrate across a number of zones, and at least one emissometer for measuring the actual emissivity of the substrate. In another embodiment, a radiant heating system is disposed under the substrate support. The temperature of the substrate is obtained from pyrometric data from the pyrometers , and the emissometer.
Name / Title
Company / Classification
Phones & Addresses
Mr. Aaron Hunter President
Accurate Painting Service, LLC Painting Contractors
1137 W. Taylor St., Suite 166, Chicago, IL 60607-4380 8554937686, 8554937686
Utica, MIOwner at One Contact Consulting I've been at Telegration Inc now for 10+ years, and continue to build and improve my own company on the side called One Contact Consulting. I like to consider... I've been at Telegration Inc now for 10+ years, and continue to build and improve my own company on the side called One Contact Consulting. I like to consider myself a one-stop shop and cost-cutter for many individuals and businesses. Also, I dabble in music and have 3 songs that I've recorded and...
Parkway Elementary School Clarkston WA 1988-1990, Orchards Elementary School Lewiston ID 1990-1995, Sacajawea Junior High School Lewiston ID 1995-1998, Tammany Elementary School Lewiston ID 1998-2001