Aaron M Hunter

US Patent:

7112763, Sep 26, 2006

Filed:

Oct 26, 2004

Appl. No.:

10/974003

Inventors:

Aaron Hunter - Santa Cruz CA, US
Rajesh S. Ramanujam - Cupertino CA, US
Balasubramanian Ramachandran - Santa Clara CA, US
Corina Elena Tanasa - Mountain View CA, US
Tarpan Dixit - San Francisco CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27D 11/00

US Classification:

219411, 219390, 219405, 392416, 392418, 118724, 118725, 118 501

Abstract:

A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500 C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

US Patent:

7813895, Oct 12, 2010

Filed:

Jul 27, 2007

Appl. No.:

11/829762

Inventors:

Aaron Hunter - Santa Cruz CA, US
Joseph Ranish - San Jose CA, US
Johanes Swenberg - Los Gatos CA, US
Robert M. Haney - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G06F 11/30

US Classification:

702182, 702 81, 439 9

Abstract:

Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.

US Patent:

7860379, Dec 28, 2010

Filed:

Jan 15, 2007

Appl. No.:

11/623238

Inventors:

Aaron Muir Hunter - Santa Cruz CA, US
Bruce E. Adams - Portland OR, US
Mehran Behdjat - San Jose CA, US
Rajesh S. Ramanujam - San Jose CA, US
Joseph M. Ranish - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

A21B 2/00
A21B 1/00
C23C 16/00

US Classification:

392416, 118725, 219411

Abstract:

The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.

US Patent:

8247317, Aug 21, 2012

Filed:

Apr 21, 2010

Appl. No.:

12/764723

Inventors:

Stephen Moffatt - St. Lawrence, JE
Aaron Muir Hunter - Santa Cruz CA, US
Bruce E. Adams - Portland OR, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/20

US Classification:

438487, 257E21133

Abstract:

Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.

US Patent:

8254767, Aug 28, 2012

Filed:

Aug 26, 2009

Appl. No.:

12/547605

Inventors:

Aaron M. Hunter - Santa Cruz CA, US
Jiping Li - Palo Alto CA, US
Rajesh S. Ramanujam - Cupertino CA, US
Thomas Haw - Portland OR, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

A21B 2/00

US Classification:

392416, 392407, 392418

Abstract:

Embodiments of the invention are directed to methods and apparatus for rapid thermal processing of a substrate over an extended temperature range, including low temperatures. Systems and methods for using an extended temperature pyrometry system employing a transmitted radiation detector system are disclosed. Systems combining transmitted radiation detector systems and emitted radiation detector systems are also described.

US Patent:

8314369, Nov 20, 2012

Filed:

Sep 17, 2008

Appl. No.:

12/212214

Inventors:

Stephen Moffatt - Channel Islands, GB
Abhilash J. Mayur - Salinas CA, US
Sundar Ramamurthy - Fremont CA, US
Joseph Ranish - San Jose CA, US
Aaron Hunter - Santa Cruz CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/26
F27B 5/14
F27D 13/00

US Classification:

219411, 2504922, 25049223, 438795, 438799

Abstract:

A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

US Patent:

20100068898, Mar 18, 2010

Filed:

Sep 17, 2008

Appl. No.:

12/212157

Inventors:

STEPHEN MOFFATT - Jersey, Channel Islands, GB
Abhilash J. Mayur - Salinas CA, US
Sundar Ramamurthy - Fremont CA, US
Joseph Ranish - San Jose CA, US
Aaron Hunter - Santa Cruz CA, US

International Classification:

H01L 21/00
F27D 11/00

US Classification:

438799, 219385, 257E21211

Abstract:

A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

US Patent:

20110089166, Apr 21, 2011

Filed:

Dec 20, 2010

Appl. No.:

12/973112

Inventors:

AARON MUIR HUNTER - Santa Cruz CA, US
Bruce E. Adams - Portland OR, US
Mehran Behdjat - San Jose CA, US
Rajesh S. Ramanujam - San Jose CA, US
Joseph M. Ranish - San Jose CA, US

International Classification:

H05B 6/02
F27D 11/12
H05B 6/64
B23K 26/12

US Classification:

219647, 392416, 219685, 219441, 21912186

Abstract:

The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.