Aaron Richard Wilson

US Patent:

6350388, Feb 26, 2002

Filed:

Aug 19, 1999

Appl. No.:

09/377256

Inventors:

Eric J. Knappenberger - Meridian ID
Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

B44C 122

US Classification:

216 42, 216 2, 216 11, 216 24, 216 67, 216 79, 438717, 438719, 438725

Abstract:

A method of forming a pattern in a layer of material on a substrate, comprising providing a plurality of spheres, covering the layer on the substrate with the plurality of spheres to form a mask, reducing the diameter of at least one sphere of the plurality of spheres, etching the layer on the substrate using the at least one sphere having a reduced diameter as a mask, and etching the substrate.

US Patent:

6358763, Mar 19, 2002

Filed:

Apr 10, 2000

Appl. No.:

09/545978

Inventors:

David H. Wells - Boise ID
Aaron R. Wilson - Boise ID
John J. Michiels - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2100

US Classification:

438 20, 427180, 427184, 427194, 427 77, 427355, 427359, 216 11

Abstract:

Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comprising material joined with the first layer. The mixture, as applied, leaves an undesirable distribution of mask particles over the first surface. After application of the mixture to the second surface, the mask particles are laterally distributed over the first surface, into a desirable distribution by placing a particle-dispersing structure directly into the mixture on the second surface and moving the particle-dispersing structure laterally through the mixture on the second surface. In another embodiment, a mixture is formed on the substrates second surface and includes a liquid component and a plurality of solid mask-forming components. A mixture-thinning structure is positioned over the substrate and separated from the second surface thereof only by the mixture.

US Patent:

6391670, May 21, 2002

Filed:

Apr 29, 1999

Appl. No.:

09/303091

Inventors:

David H. Wells - Boise ID
Ji Ung Lee - Cohoes NY
Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2100

US Classification:

438 20, 445 49, 445 50, 445 51

Abstract:

A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (âtopographic selectivityâ) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid. Accordingly, such formation of the extraction grid is self-aligned to its associated emitter tip structures.

US Patent:

6416376, Jul 9, 2002

Filed:

Mar 29, 2000

Appl. No.:

09/537525

Inventors:

Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01J 904

US Classification:

445 50, 445 24

Abstract:

A method of forming emitter tips for use in a field emission array is disclosed. The tips are formed by utilizing a polymer residue that forms during the dry etch sharpening step to hold the mask caps in place on the emitter tips. The residue polymer continues to support the mask caps as the tips are over-etched, enabling the tips to be etched past sharp without losing their shape and sharpness. The dry etch utilizes an etchant comprised of fluorine and chlorine gasses. The mask caps and residue polymer are easily removed after etching by washing the wafers in a wash of deionized water, or Buffered Oxide Etch.

US Patent:

6461526, Oct 8, 2002

Filed:

Aug 14, 2000

Appl. No.:

09/639357

Inventors:

Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01J 904

US Classification:

216 11, 216 24, 216 46, 216 51, 216 67, 216 79, 445 50

Abstract:

A method of forming emitter tips for use in a field emission array is disclosed. The tips are formed by utilizing a polymer residue that forms during the dry etch sharpening step to hold the mask caps in place on the emitter tips. The residue polymer continues to support the mask caps as the tips are over-etched, enabling the tips to be etched past sharp without losing their shape and sharpness. The dry etch utilizes an etchant comprised of fluorine and chlorine gases. The mask caps and residue polymer are easily removed after etching by washing the wafers in a wash of deionized water, or Buffered Oxide Etch.

US Patent:

6464890, Oct 15, 2002

Filed:

Aug 29, 2001

Appl. No.:

09/942139

Inventors:

Eric J. Knappenberger - Meridian ID
Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

B44C 122

US Classification:

216 42, 216 11, 216 24, 216 51, 216 79

Abstract:

A method of forming a pattern in a layer of material on a substrate, comprising providing a plurality of spheres, covering the layer on the substrate with the plurality of spheres to form a mask, reducing the diameter of at least one sphere of the plurality of spheres, etching the layer on the substrate using at least one sphere having a reduced diameter as a mask, and etching the substrate.

US Patent:

6555402, Apr 29, 2003

Filed:

Feb 8, 2002

Appl. No.:

10/071440

Inventors:

David H. Wells - Boise ID
Ji Ung Lee - Cohoes NY
Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2100

US Classification:

438 20, 438 30, 257 72, 345 82

Abstract:

An extraction grid for field emitter tip structures and method of forming are described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (âtopographic selectivityâ) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid. Accordingly, such formation of the extraction grid is self-aligned to its associated emitter tip structures.

US Patent:

6649469, Nov 18, 2003

Filed:

Oct 11, 2002

Appl. No.:

10/269302

Inventors:

Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 218242

US Classification:

438253, 438396

Abstract:

A carbon containing masking layer is patterned to include a plurality of container openings therein having minimum feature dimensions of less than or equal to 0. 20 micron. The container openings respectively have at least three peripheral corner areas which are each rounded. The container forming layer is plasma etched through the masking layer openings. In one implementation, such plasma etching uses conditions effective to both a) etch the masking layer to modify shape of the masking layer openings by at least reducing degree of roundness of the at least three corners in the masking layer, and b) form container openings in the container forming layer of the modified shapes. Capacitors comprising container shapes are formed using the container openings in the container forming layer. Other implementations and aspects are disclosed.