Aaron Wade Wilson

US Patent:

6350388, Feb 26, 2002

Filed:

Aug 19, 1999

Appl. No.:

09/377256

Inventors:

Eric J. Knappenberger - Meridian ID
Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

B44C 122

US Classification:

216 42, 216 2, 216 11, 216 24, 216 67, 216 79, 438717, 438719, 438725

Abstract:

A method of forming a pattern in a layer of material on a substrate, comprising providing a plurality of spheres, covering the layer on the substrate with the plurality of spheres to form a mask, reducing the diameter of at least one sphere of the plurality of spheres, etching the layer on the substrate using the at least one sphere having a reduced diameter as a mask, and etching the substrate.

US Patent:

6358763, Mar 19, 2002

Filed:

Apr 10, 2000

Appl. No.:

09/545978

Inventors:

David H. Wells - Boise ID
Aaron R. Wilson - Boise ID
John J. Michiels - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2100

US Classification:

438 20, 427180, 427184, 427194, 427 77, 427355, 427359, 216 11

Abstract:

Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comprising material joined with the first layer. The mixture, as applied, leaves an undesirable distribution of mask particles over the first surface. After application of the mixture to the second surface, the mask particles are laterally distributed over the first surface, into a desirable distribution by placing a particle-dispersing structure directly into the mixture on the second surface and moving the particle-dispersing structure laterally through the mixture on the second surface. In another embodiment, a mixture is formed on the substrates second surface and includes a liquid component and a plurality of solid mask-forming components. A mixture-thinning structure is positioned over the substrate and separated from the second surface thereof only by the mixture.

US Patent:

6391670, May 21, 2002

Filed:

Apr 29, 1999

Appl. No.:

09/303091

Inventors:

David H. Wells - Boise ID
Ji Ung Lee - Cohoes NY
Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2100

US Classification:

438 20, 445 49, 445 50, 445 51

Abstract:

A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (âtopographic selectivityâ) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid. Accordingly, such formation of the extraction grid is self-aligned to its associated emitter tip structures.

US Patent:

6416376, Jul 9, 2002

Filed:

Mar 29, 2000

Appl. No.:

09/537525

Inventors:

Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01J 904

US Classification:

445 50, 445 24

Abstract:

A method of forming emitter tips for use in a field emission array is disclosed. The tips are formed by utilizing a polymer residue that forms during the dry etch sharpening step to hold the mask caps in place on the emitter tips. The residue polymer continues to support the mask caps as the tips are over-etched, enabling the tips to be etched past sharp without losing their shape and sharpness. The dry etch utilizes an etchant comprised of fluorine and chlorine gasses. The mask caps and residue polymer are easily removed after etching by washing the wafers in a wash of deionized water, or Buffered Oxide Etch.

US Patent:

6421747, Jul 16, 2002

Filed:

Feb 25, 1999

Appl. No.:

09/257391

Inventors:

Aaron Wade Wilson - Berthoud CO

Assignee:

STMicroelectronics N.V.

International Classification:

G06F 306

US Classification:

710 56, 711170

Abstract:

A method for maximizing buffer usage in a disk drive system. Control circuitry within the disk drive system tansfers the defective sector list for the disk to a buffer, and places the list in a reserved list area. The size of the defective sector list is then determined and the reserved list area is reduced to a size equal to the size of the defective sector list plus some spare room. If the newly sized reserved list area is not at one end of the buffer, it is then moved to one end of the buffer to leave the remainder of the buffer as a contiguous and expanded reserved user area for use data. The expanded reserved user area reduces the time of read or write operations in a disk drive.

US Patent:

6442715, Aug 27, 2002

Filed:

Nov 5, 1998

Appl. No.:

09/187061

Inventors:

Aaron W. Wilson - Berthoud CO

Assignee:

STMicroelectrics N.V.

International Classification:

G11C 2900

US Classification:

714710, 714718, 714708

Abstract:

Disclosed is a storage media defect management method for use in a storage device that is to be coupled to a computer. The method broadly includes writing data to a storage media of the storage device, the storage media having a plurality of servo fields. Stopping the writing upon detecting an off-track or other servo field error with a particular servo field of the plurality of servo fields. Reallocating a plurality of suspect sectors that may be affected by the off-track or other servo field error detected in the particular servo field. The method then proceeds to resume the writing beginning with a next sector following the plurality of suspect sectors that were reallocated. In a preferred implementation, a number of preliminary checks are preferably performed on the plurality of suspect sectors to ascertain which ones may not be part of the reallocation transfer. However, the plurality of suspect sectors that are reallocated will preferably not be more than a maximum look-ahead number set in accordance with a disk zone that the current track being written lies. In this manner, maximum look-ahead reallocation number can be custom implemented depending on which track of the media the servo error is detected.

US Patent:

6461526, Oct 8, 2002

Filed:

Aug 14, 2000

Appl. No.:

09/639357

Inventors:

Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01J 904

US Classification:

216 11, 216 24, 216 46, 216 51, 216 67, 216 79, 445 50

Abstract:

A method of forming emitter tips for use in a field emission array is disclosed. The tips are formed by utilizing a polymer residue that forms during the dry etch sharpening step to hold the mask caps in place on the emitter tips. The residue polymer continues to support the mask caps as the tips are over-etched, enabling the tips to be etched past sharp without losing their shape and sharpness. The dry etch utilizes an etchant comprised of fluorine and chlorine gases. The mask caps and residue polymer are easily removed after etching by washing the wafers in a wash of deionized water, or Buffered Oxide Etch.

US Patent:

6464890, Oct 15, 2002

Filed:

Aug 29, 2001

Appl. No.:

09/942139

Inventors:

Eric J. Knappenberger - Meridian ID
Aaron R. Wilson - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

B44C 122

US Classification:

216 42, 216 11, 216 24, 216 51, 216 79

Abstract:

A method of forming a pattern in a layer of material on a substrate, comprising providing a plurality of spheres, covering the layer on the substrate with the plurality of spheres to form a mask, reducing the diameter of at least one sphere of the plurality of spheres, etching the layer on the substrate using at least one sphere having a reduced diameter as a mask, and etching the substrate.