Brian K Lu

US Patent:

7208389, Apr 24, 2007

Filed:

Sep 26, 2003

Appl. No.:

10/672311

Inventors:

Adrianne K. Tipton - Fremont CA, US
Brian G. Lu - Fremont CA, US
Patrick A. Van Cleemput - Sunnyvale CA, US
Michelle T. Schulberg - Palo Alto CA, US
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
Feng Wang - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438409, 257E21273

Abstract:

Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e. g. , alpha-terpinene) or a norbornene (e. g. , ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.

US Patent:

7629227, Dec 8, 2009

Filed:

Oct 26, 2007

Appl. No.:

11/925514

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Nerissa Draeger - Milpitas CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438452, 257E21559

Abstract:

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e. g. , a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

US Patent:

7678709, Mar 16, 2010

Filed:

Jul 24, 2007

Appl. No.:

11/881005

Inventors:

Brian Lu - Fremont CA, US
Collin Mui - Mountain View CA, US
Bunsen Nie - Fremont CA, US
Raihan Tarafdar - San Jose CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438769, 257703, 257752

Abstract:

A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.

US Patent:

7888273, Feb 15, 2011

Filed:

Aug 6, 2007

Appl. No.:

11/834581

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438778, 438781

Abstract:

Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0. 13 μm.

US Patent:

8146530, Apr 3, 2012

Filed:

Oct 20, 2008

Appl. No.:

12/254778

Inventors:

Tetsuya Ishikawa - Saratoga CA, US
Rick J. Roberts - San Jose CA, US
Helen R. Armer - Cupertino CA, US
Leon Volfovski - Mountain View CA, US
Jay D. Pinson - San Jose CA, US
Michael Rice - Pleasanton CA, US
David H. Quach - San Jose CA, US
Mohsen S. Salek - Saratoga CA, US
Robert Lowrance - Los Gatos CA, US
John A. Backer - San Jose CA, US
William Tyler Weaver - Austin TX, US
Charles Carlson - Cedar Park TX, US
Chongyang Wang - San Jose CA, US
Jeffrey Hudgens - San Francisco CA, US
Harald Herchen - Los Altos CA, US
Brian Lu - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05C 13/02
C23C 14/00
H01L 21/67

US Classification:

118503, 118500, 118 50, 414217, 41422205, 414936

Abstract:

Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e. g. , a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

US Patent:

8181596, May 22, 2012

Filed:

Oct 20, 2008

Appl. No.:

12/254750

Inventors:

Tetsuya Ishikawa - Saratoga CA, US
Rick J. Roberts - San Jose CA, US
Helen R. Armer - Cupertino CA, US
Leon Volfovski - Mountain View CA, US
Jay D. Pinson - San Jose CA, US
Michael Rice - Pleasanton CA, US
David H. Quach - San Jose CA, US
Mohsen S. Salek - Saratoga CA, US
Robert Lowrance - Los Gatos CA, US
John A. Backer - San Jose CA, US
William Tyler Weaver - Austin TX, US
Charles Carlson - Cedar Park TX, US
Chongyang Wang - San Jose CA, US
Jeffrey Hudgens - San Francisco CA, US
Harald Herchen - Los Altos CA, US
Brian Lu - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05C 13/02
C23C 14/00
H01L 21/677

US Classification:

118500, 118503, 118 50, 414217, 41422501, 414935, 414936

Abstract:

An apparatus for processing substrates using a multi-chamber processing system (e. g. , a cluster tool) that has an increased system throughput, increased system reliability, a smaller system footprint, and a more repeatable wafer history. Embodiments provide for a cluster tool comprising first and second processing racks, each having two or more vertically stacked substrate processing chambers, a first robot assembly able to access the first processing rack from a first side, a second robot assembly able to access the first processing rack from a second side and the second processing rack from a first side, a third robot assembly able to access the second processing rack from a second side, and a fourth robot assembly able to access the first and second processing racks and to load substrates in a cassette.

US Patent:

8187951, May 29, 2012

Filed:

Nov 24, 2009

Appl. No.:

12/625468

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Nerissa Draeger - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438452, 257E21559

Abstract:

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e. g. , a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

US Patent:

8215262, Jul 10, 2012

Filed:

Oct 20, 2008

Appl. No.:

12/254784

Inventors:

Tetsuya Ishikawa - Saratoga CA, US
Rick J. Roberts - San Jose CA, US
Helen R. Armer - Cupertino CA, US
Leon Volfovski - Mountain View CA, US
Jay D. Pinson - San Jose CA, US
Michael Rice - Pleasanton CA, US
David H. Quach - San Jose CA, US
Mohsen S. Salek - Saratoga CA, US
Robert Lowrance - Los Gatos CA, US
John A. Backer - San Jose CA, US
William Tyler Weaver - Austin TX, US
Charles Carlson - Cedar Park TX, US
Chongyang Wang - San Jose CA, US
Jeffrey Hudgens - San Francisco CA, US
Harald Herchen - Los Altos CA, US
Brian Lu - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05C 13/02
C23C 14/00
H01L 21/677

US Classification:

118500, 118503, 118 50, 414217, 41422501, 414935, 414936

Abstract:

Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e. g. , a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, a cluster tool for processing a substrate includes a first processing rack, a first robot assembly and a second robot assembly operable to transfer substrates to substrate processing chambers in the first processing rack, and a horizontal motion assembly. The horizontal motion assembly includes one or more walls that form an interior region in which a motor is enclosed. The one or more walls defining an elongated opening through which a robot support interface travels, the robot support interface supporting a robot of the horizontal motion assembly.