Brian L Lu

US Patent:

7208389, Apr 24, 2007

Filed:

Sep 26, 2003

Appl. No.:

10/672311

Inventors:

Adrianne K. Tipton - Fremont CA, US
Brian G. Lu - Fremont CA, US
Patrick A. Van Cleemput - Sunnyvale CA, US
Michelle T. Schulberg - Palo Alto CA, US
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
Feng Wang - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438409, 257E21273

Abstract:

Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e. g. , alpha-terpinene) or a norbornene (e. g. , ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.

US Patent:

7629227, Dec 8, 2009

Filed:

Oct 26, 2007

Appl. No.:

11/925514

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Nerissa Draeger - Milpitas CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438452, 257E21559

Abstract:

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e. g. , a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

US Patent:

7678709, Mar 16, 2010

Filed:

Jul 24, 2007

Appl. No.:

11/881005

Inventors:

Brian Lu - Fremont CA, US
Collin Mui - Mountain View CA, US
Bunsen Nie - Fremont CA, US
Raihan Tarafdar - San Jose CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438769, 257703, 257752

Abstract:

A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.

US Patent:

7888273, Feb 15, 2011

Filed:

Aug 6, 2007

Appl. No.:

11/834581

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438778, 438781

Abstract:

Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0. 13 μm.

US Patent:

8187951, May 29, 2012

Filed:

Nov 24, 2009

Appl. No.:

12/625468

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Nerissa Draeger - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438452, 257E21559

Abstract:

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e. g. , a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

US Patent:

20160068961, Mar 10, 2016

Filed:

Sep 5, 2014

Appl. No.:

14/478919

Inventors:

- Herzogenrath, DE
Lin Yang - Sunnyvale CA, US
Jerry Mack - Sunnyvale CA, US
Zia Karim - Sunnyvale CA, US
Brian Lu - Sunnyvale CA, US

International Classification:

C23C 16/52
C23C 16/455

Abstract:

Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods.

US Patent:

20150140234, May 21, 2015

Filed:

Nov 19, 2014

Appl. No.:

14/547720

Inventors:

- Herzogenrath, DE
Brian Lu - Fremont CA, US
Kenneth Teo - Cambridge, GB
Nalin Rupesinghe - Cambridge, GB

International Classification:

C23C 16/50
C23C 16/26
C23C 16/46
C23C 16/455
C23C 16/515

US Classification:

427577, 118723 MP

Abstract:

The invention relates to a device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers having a gas inlet element () having a housing cavity () enclosed by housing walls (″), into which a gas feed line () opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity (), having a plasma generator, which has components () arranged at least partially in the housing cavity (), which has at least one plasma electrode () to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus convert it into a gaseous intermediate product, and having a gas outlet surface () having a plurality of gas outlet openings (), through which the gaseous intermediate product can exit out of the housing cavity (). A gas heating unit () is provided for assisting the conversion, which is arranged downstream of the components ().