Brian A Lu

US Patent:

7208389, Apr 24, 2007

Filed:

Sep 26, 2003

Appl. No.:

10/672311

Inventors:

Adrianne K. Tipton - Fremont CA, US
Brian G. Lu - Fremont CA, US
Patrick A. Van Cleemput - Sunnyvale CA, US
Michelle T. Schulberg - Palo Alto CA, US
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
Feng Wang - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438409, 257E21273

Abstract:

Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e. g. , alpha-terpinene) or a norbornene (e. g. , ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.

US Patent:

7265061, Sep 4, 2007

Filed:

Mar 11, 2004

Appl. No.:

10/800377

Inventors:

Easwar Srinivasan - Beaverton OR, US
Brian G. Lu - Fremont CA, US
David Mordo - Cupertino CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31

US Classification:

438764, 438781

Abstract:

Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric matrix and further exposing the dielectric matrix to ultraviolet radiation to increase the mechanical strength of the dielectric matrix. Some methods involve activating a gas to create reactive gas species that can clean a reaction chamber. One disclosed apparatus includes an array of multiple ultraviolet sources that can be controlled such that different wavelengths of light can be used to irradiate a sample at a time.

US Patent:

7381662, Jun 3, 2008

Filed:

Mar 14, 2006

Appl. No.:

11/376510

Inventors:

Dong Niu - Tualatin OR, US
Haiying Fu - West Linn OR, US
Brian Lu - Fremont CA, US
Feng Wang - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/26
H01L 21/76

US Classification:

438795, 438410

Abstract:

Methods for improving the mechanical properties of a CDO film are provided. The methods involve, for instance, providing either a dense CDO film or a porous CDO film in which the porogen has been removed followed by curing the CDO film at an elevated temperature using either a UV light treatment, an e-beam treatment, or a plasma treatment such that the curing improves the mechanical toughness of the CDO dielectric film.

US Patent:

7482247, Jan 27, 2009

Filed:

Sep 19, 2006

Appl. No.:

11/524502

Inventors:

George D. Papasouliotis - North Andover MA, US
Raihan M. Tarafdar - San Jose CA, US
Dennis M. Hausmann - Lake Oswego OR, US
Jeff Tobin - Mountain View CA, US
Adrianne K. Tipton - Pleasanton CA, US
Bunsen Nie - Fremont CA, US
Brian G. Lu - Fremont CA, US
Timothy M. Archer - Lake Oswego OR, US
Sasson Roger Somekh - Los Altos Hills CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/311

US Classification:

438437, 438789, 257E21245, 257E21546

Abstract:

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0. 13 micron, for example 0. 1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of any suitable confirmal dielectric deposition technique and a dry etch back. The etch back part of the process involves a single step or an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality nanolaminate dielectric gap fill operations.

US Patent:

7629227, Dec 8, 2009

Filed:

Oct 26, 2007

Appl. No.:

11/925514

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Nerissa Draeger - Milpitas CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438452, 257E21559

Abstract:

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e. g. , a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

US Patent:

7678709, Mar 16, 2010

Filed:

Jul 24, 2007

Appl. No.:

11/881005

Inventors:

Brian Lu - Fremont CA, US
Collin Mui - Mountain View CA, US
Bunsen Nie - Fremont CA, US
Raihan Tarafdar - San Jose CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438769, 257703, 257752

Abstract:

A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.

US Patent:

7888273, Feb 15, 2011

Filed:

Aug 6, 2007

Appl. No.:

11/834581

Inventors:

Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438778, 438781

Abstract:

Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0. 13 μm.

US Patent:

8146530, Apr 3, 2012

Filed:

Oct 20, 2008

Appl. No.:

12/254778

Inventors:

Tetsuya Ishikawa - Saratoga CA, US
Rick J. Roberts - San Jose CA, US
Helen R. Armer - Cupertino CA, US
Leon Volfovski - Mountain View CA, US
Jay D. Pinson - San Jose CA, US
Michael Rice - Pleasanton CA, US
David H. Quach - San Jose CA, US
Mohsen S. Salek - Saratoga CA, US
Robert Lowrance - Los Gatos CA, US
John A. Backer - San Jose CA, US
William Tyler Weaver - Austin TX, US
Charles Carlson - Cedar Park TX, US
Chongyang Wang - San Jose CA, US
Jeffrey Hudgens - San Francisco CA, US
Harald Herchen - Los Altos CA, US
Brian Lu - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05C 13/02
C23C 14/00
H01L 21/67

US Classification:

118503, 118500, 118 50, 414217, 41422205, 414936

Abstract:

Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e. g. , a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.