Chang H Park MD 2405 W 8 St STE 102, Los Angeles, CA 90057 2133837606 (phone), 2133837697 (fax)
Education:
Medical School Yonsei Univ, Coll of Med, Sudai Moon Ku, Seoul, So Korea Graduated: 1960
Conditions:
Erectile Dysfunction (ED) Prostatitis Urinary Tract Infection (UT) Benign Prostatic Hypertrophy Calculus of the Urinary System
Languages:
English Korean
Description:
Dr. Park graduated from the Yonsei Univ, Coll of Med, Sudai Moon Ku, Seoul, So Korea in 1960. He works in Los Angeles, CA and specializes in Urology. Dr. Park is affiliated with St Vincent Medical Center.
A field-effect transistor (FET) on bulk substrate and a method of fabricating the same is discussed herein. The FET includes a dielectric layer disposed on the bulk substrate and a fin structure and a gate structure disposed on the dielectric layer. The dielectric layer includes alternating first and second dielectric regions. The fin structure includes a channel region interposed between a source region and a drain region. The gate structure is capacitively coupled to the fin structure and positioned between the source region and the drain region. Improved performance characteristics of FET is primarily achieved with the dielectric layer providing electrical isolation of the fin structure from the bulk substrate.
Isbn (Books And Publications)
Optical Transmission, Switching, and Subsystems IV: 5-7 September, 2006, Gwangju, South Korea