A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba Sr )TiO , where X is between about 0. 5 and about 1. Also provided is a method for making a dielectric thin film of the general formula (Ba Sr )TiO and doped with W, where X is between about 0. 5 and about 1. 0, a substrate is provided, TiO , the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO , the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.
Xiao-Dong Xiang - Alameda CA Chen Gao - Alameda CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
G01B 734
US Classification:
73105
Abstract:
A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.