Christopher C Harris

US Patent:

7728403, Jun 1, 2010

Filed:

May 31, 2006

Appl. No.:

11/444106

Inventors:

Christopher Harris - Rockville MD, US
Cem Basceri - Reston VA, US
Kent Bertilsson - Sundsvall, SE

Assignee:

Cree Sweden AB - Kista

International Classification:

H01L 29/47

US Classification:

257484, 257471, 257472, 257473, 257486, 257454, 257155, 257284

Abstract:

A semiconductor device of unipolar type has Schottky-contacts () laterally separated by regions in the form of additional layers (″) of semiconductor material on top of a drift layer (). Said additional layers being doped according to a conductivity type being opposite to the one of the drift layer. At least one (″) of the additional layers has a substantially larger lateral extension and thereby larger area of the interface to the drift layer than adjacent such layers () for facilitating the building-up of a sufficient voltage between that layer and the drift layer for injecting minority charge carriers into the drift layer upon surge for surge protection.

Address:

542 Warrick Rd, Chesapeake, VA 23322

Phone:

7575810841

VIN:

5NPEB4AC2BH052882

Make:

HYUNDAI

Model:

SONATA

Year:

2011