Christopher T Scanlan

US Patent:

20160064334, Mar 3, 2016

Filed:

Aug 26, 2015

Appl. No.:

14/836525

Inventors:

- Tempe AZ, US
Sabbas A. Daniel - Los Altos CA, US
Christopher M. Scanlan - Chandler AZ, US

International Classification:

H01L 23/544
H01L 21/66
H01L 21/56
H01L 21/768
H01L 21/78

Abstract:

A method of making a semiconductor device can include providing a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface. The method can include forming a build-up interconnect structure that extends over the active surface of each of the plurality of semiconductor die within the wafer, and forming a unique identifying mark for each of the plurality of semiconductor die as part of a layer within the build-up interconnect structure while simultaneously forming the layer of the build-up interconnect structure. The layer of the build-up interconnect structure can comprise both the unique identifying marks for each of the plurality of semiconductor die and functionality for the semiconductor device. Each unique identifying mark can convey a unique identity of its respective semiconductor die. The method can further include singulating the plurality of semiconductor die into a plurality of semiconductor devices.