Cynthia Elaine Brooks

US Patent:

6355557, Mar 12, 2002

Filed:

Jul 22, 1998

Appl. No.:

09/121190

Inventors:

James A. Stinnett - Mountain View CA
Cynthia B. Brooks - Sunnyvale CA
Walter R. Merry - Cupertino CA
Jason Regis - Amesbury MA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 214763

US Classification:

438640, 438689, 438700, 438712, 438711, 438713

Abstract:

An oxide etching method, particularly applicable to forming through an oxide layer a wineglass shaped contact or via hole of controlled shape. The wineglass hole is particularly useful for eased metal hole filling. The bowl is etched by first etching an anisotropic hole through a mask aperture, and then isotropically etching through the same mask aperture. The relative periods of the anisotropic and isotropic etch determine the lateral-to-vertical dimensions of the bowl. The stem is then etched through the same mask aperture with a strongly anisotropic etch. The isotropic etch may be performed in the same chamber as the anisotropic etch or may advantageously be performed in a separate etch chamber having a remote plasma source.

US Patent:

7250309, Jul 31, 2007

Filed:

Jan 9, 2004

Appl. No.:

10/754321

Inventors:

Alfred W. Mak - Union City CA, US
Yung-Hee Yvette Lee - San Jose CA, US
Cynthia B. Brooks - Austin TX, US
Melisa J. Buie - San Jose CA, US
Turgut Sahin - Cupertino CA, US
Jian Ding - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 31/26

US Classification:

438 14, 438 15, 438 16, 438 17, 257 48, 250307

Abstract:

Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

US Patent:

20070296980, Dec 27, 2007

Filed:

Jul 31, 2007

Appl. No.:

11/831943

Inventors:

ALFRED MAK - Union City CA, US
Yung-Hee Lee - San Jose CA, US
Cynthia Brooks - Austin TX, US
Melisa Buie - San Jose CA, US
Turgut Sahin - Cupertino CA, US
Jian Ding - San Jose CA, US

International Classification:

G01B 11/14

US Classification:

356625000

Abstract:

Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

US Patent:

57862761, Jul 28, 1998

Filed:

Mar 31, 1997

Appl. No.:

8/829683

Inventors:

Cynthia B. Brooks - Sunnyvale CA
Walter Merry - Cupertino CA
Ajey M. Joshi - San Jose CA
Gladys D. Quinones - Santa Clara CA
Jitske Trevor - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B44C 122
H01L 21302

US Classification:

438724

Abstract:

A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH. sub. 3 F/CF. sub. 4 /O. sub. 2 recipe and a CH. sub. 2 F. sub. 2 /CF. sub. 4 /O. sub. 2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material. A pins-up scheme is used for simultaneously stripping away backside nitride with topside nitride.