Daniel L Liu

US Patent:

7515049, Apr 7, 2009

Filed:

Jun 8, 2006

Appl. No.:

11/449084

Inventors:

Arun Sharma - Cupertino CA, US
Daniel Fritschen - Sunnyvale CA, US
Daniel Liu - San Francisco CA, US
Norma Riley - Fremont CA, US

Assignee:

Asyst Technologies, Inc. - Fremont CA

International Classification:

G08B 13/14

US Classification:

3405726, 3405721, 340 101

Abstract:

The present invention generally comprises an apparatus that allows an RFID antenna to obtain information from an RFID tag mounted on a container. The apparatus reproduces the RF field generated by the antenna to a location proximate to the RFID tag. In one embodiment, the apparatus comprises a pickup device and a reproduction device electrically coupled with the pickup device. In another embodiment, the apparatus comprises at least one magnetic rod, which creates a magnetic path for the RF field to travel between the antenna and the RFID tag. In another embodiment, the apparatus comprises a pickup antenna and a reproduction antenna for transmitting the RF signal from the antenna proximate to the RFID tag.

US Patent:

7707732, May 4, 2010

Filed:

Oct 15, 2008

Appl. No.:

12/252354

Inventors:

Alex Shenderovich - San Francisco CA, US
Boris Djurovic - San Jose CA, US
Daniel Liu - Milpitas CA, US
Wen Chang - Sunnyvale CA, US
Benyamin Buller - Sylvania OH, US
Erel Milshtein - Cupertino CA, US

Assignee:

Solyndra, Inc. - Fremont CA

International Classification:

B43L 13/00

US Classification:

33 181, 33 211

Abstract:

A scribing system comprising a mounting mechanism, stylus, and force generating mechanism is provided. The mounting mechanism is configured to rotate an elongated object in such a manner that the object is subjected to a bow effect wherein a middle portion of the object bends relative to the end portions of the object. The stylus is for scribing the object at a position x along the long dimension of the object while the mounting mechanism rotates the object. The force generating mechanism is connected to the stylus so that the stylus applies the same constant force to the elongated object regardless of the position x along the long dimension of the object that the stylus is positioned, while the mounting mechanism rotates the object and thereby subjects the object to the bow effect, thereby scribing the object.

US Patent:

7877881, Feb 1, 2011

Filed:

Mar 18, 2010

Appl. No.:

12/727184

Inventors:

Alex Shenderovich - San Francisco CA, US
Boris Djurovic - San Jose CA, US
Daniel Liu - Milpitas CA, US
Wen Chang - Sunnyvale CA, US
Benyamin Butler - Slyvania OH, US
Erel Milshtein - Cupertino CA, US

Assignee:

Solyndra, Inc. - Fremont CA

International Classification:

B43L 13/00

US Classification:

33 181, 33 211

Abstract:

A scribing system comprising a mounting mechanism, stylus, and force generating mechanism is provided. The mounting mechanism is configured to rotate an elongated object in such a manner that the object is subjected to a bow effect wherein a middle portion of the object bends relative to the end portions of the object. The stylus is for scribing the object at a position x along the long dimension of the object while the mounting mechanism rotates the object. The force generating mechanism is connected to the stylus so that the stylus applies the same constant force to the elongated object regardless of the position x along the long dimension of the object that the stylus is positioned, while the mounting mechanism rotates the object and thereby subjects the object to the bow effect, thereby scribing the object.

US Patent:

7884433, Feb 8, 2011

Filed:

Oct 31, 2008

Appl. No.:

12/290495

Inventors:

Tom Zhong - Saratoga CA, US
Rongfu Xiao - Fremont CA, US
Adam Zhong - Milpitas CA, US
Wai-Ming Johnson Kan - San Ramon CA, US
Daniel Liu - San Jose CA, US

Assignee:

MagIC Technologies, Inc. - Milpitas CA

International Classification:

H01L 29/82

US Classification:

257421, 257774, 257E29323, 257E23145

Abstract:

A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

US Patent:

7919407, Apr 5, 2011

Filed:

Nov 17, 2009

Appl. No.:

12/590945

Inventors:

Tom Zhong - Saratoga CA, US
Wai-Ming Johnson Kan - San Ramon CA, US
Daniel Liu - San Jose CA, US
Adam Zhong - Milpitas CA, US

Assignee:

MagIC Technologies, Inc. - Milpitas CA

International Classification:

H01L 21/4763

US Classification:

438622, 438 3, 438614, 438618, 438620, 438674, 257E21665

Abstract:

Described herein are novel, cost effective and scalable methods for integrating a CMOS level with a memory cell level to form a field induced MRAM device. The memory portion of the device includes N parallel word lines, which may be clad, overlaid by M parallel bit lines orthogonal to the word lines and individual patterned memory cells formed on previously patterned electrodes at the N×M intersections of the two sets of lines. The memory portion is integrated with a CMOS level and the connection between levels is facilitated by the formation of interconnecting vias between the N×M electrodes and corresponding pads in the CMOS level and by word line connection pads in the memory device level and corresponding metal pads in the CMOS level. Of particular importance are process steps that replace single damascene formations by dual damascene formations, different process steps for the formation of clad and unclad word lines and the formation of patterned electrodes for the memory cells prior to the patterning of the cells themselves.

US Patent:

8109004, Feb 7, 2012

Filed:

Jan 26, 2011

Appl. No.:

13/014286

Inventors:

Alex Shenderovich - San Francisco CA, US
Boris Djurovic - San Jose CA, US
Daniel Liu - Milpitas CA, US
Wen Chang - Sunnyvale CA, US
Benyamin Buller - Sylvania OH, US
Erel Milshtein - Cupertino CA, US

Assignee:

Solyndra LLC - Fremont CA

International Classification:

B43L 13/00

US Classification:

33 181, 33 211

Abstract:

A scribing system comprising a mounting mechanism, stylus, and force generating mechanism is provided. The mounting mechanism is configured to rotate an elongated object in such a manner that the object is subjected to a bow effect wherein a middle portion of the object bends relative to the end portions of the object. The stylus is for scribing the object at a position x along the long dimension of the object while the mounting mechanism rotates the object. The force generating mechanism is connected to the stylus so that the stylus applies the same constant force to the elongated object regardless of the position x along the long dimension of the object that the stylus is positioned, while the mounting mechanism rotates the object and thereby subjects the object to the bow effect, thereby scribing the object.

US Patent:

8183061, May 22, 2012

Filed:

Feb 7, 2011

Appl. No.:

12/931648

Inventors:

Tom Zhong - Saratoga CA, US
Rongfu Xiao - Fremont CA, US
Adam Zhong - Milpitas CA, US
Wai-Ming Johnson Kan - San Ramon CA, US
Daniel Liu - San Jose CA, US

Assignee:

MagIC Technologies, Inc. - Milpitas CA

International Classification:

H01L 21/441

US Classification:

438 3, 257421, 257E21577, 257E21579, 438637

Abstract:

A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

US Patent:

8324698, Dec 4, 2012

Filed:

Jan 4, 2011

Appl. No.:

12/930333

Inventors:

Tom Zhong - Saratoga CA, US
Rongfu Xiao - Fremont CA, US
Adam Zhong - Milpitas CA, US
Wai-Ming Johnson Kan - San Ramon CA, US
Daniel Liu - San Jose CA, US

Assignee:

MagIC Technologies, Inc. - Milpitas CA

International Classification:

H01L 29/82

US Classification:

257421, 257774, 257E29323, 257E23145

Abstract:

A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.