David A Knudson

US Patent:

52455149, Sep 14, 1993

Filed:

May 27, 1992

Appl. No.:

7/888670

Inventors:

James A. Fife - Thornbury, GB2
David A. Knudson - Gilbertsville PA
Prabhat Kumar - Allentown PA
Viren Pathare - Allentown PA

Assignee:

Cabot Corporation - Boston MA

International Classification:

H01G 905

US Classification:

361529

Abstract:

Tantalum electrode material is produced which has extremely low tortuosity, exceptionally low ESL and ESR, potentially extended high frequency performance, very high volumetric efficiency, and reduced tantalum consumption per electrode. The electrode material is characterized by having a cross-section composed of plates of tantalum separated by spaced gaps resulting in a highly dense (volumetric efficiency) electrode. The plates are electrically interconnected which also adds to the structural stability of the article. This is made possible by being able to carefully control the geometry of the tantalum material during processing. A method for producing such material includes extruding a billet filled with a (preferentially geometrically uniform) mixture of rods of tantalum and an extrudable metal. When the billet has been sufficiently reduced in size and severed, the extrudable metal is removed by selectively dissolving with acid. In addition to the above advantages, the resulting article is particularly adapted for use in super-miniaturization applications.