Zhiyong Wang - Chandler AZ, US Rajendra Dias - Phoenix AZ, US Deepak Goyal - Phoenix AZ, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G01N 21/00
US Classification:
356 731
Abstract:
Apparatuses, methods, and systems associated with and/or having components capable of, isolating defects in microelectronic packages are disclosed herein. In various embodiments, a defect-isolation apparatus may include an optoelectronic module to convert an optical test signal to an electrical test signal and provide the electrical test signal to a device under test; an electro-optic probe including an electro-optic crystal to polarize an optical sampling signal upon application of an electrical test signal reflected from the device under test to the electro-optic crystal; and an output module configured to receive the polarized optical sampling signal, and produce an electrical output signal as a function of time based at least in part on the polarized optical sampling signal, the electrical output signal adapted to facilitate isolation of the location(s) of the defect(s) in the device under test.
Tec-Embedded Dummy Die To Cool The Bottom Die Edge Hotspot
- Santa Clara CA, US Zhimin WAN - Chandler AZ, US Peng LI - Chandler AZ, US Deepak GOYAL - Phoenix AZ, US
International Classification:
H01L 23/367 H01L 23/40 H01L 23/38
Abstract:
Embodiments disclosed herein include thermoelectric cooling (TEC) dies for multi-chip packages. In an embodiment, a TEC die comprises a glass substrate and an array of N-type semiconductor vias and P-type semiconductor vias through the glass substrate. In an embodiment, conductive traces are over the glass substrate, and individual ones of the conductive traces connect an individual one of the N-type semiconductor vias to an individual one of the P-type semiconductor vias.
Method And Device For Failure Analysis Using Rf-Based Thermometry
- Santa Clara CA, US Phillip C. Miller - Chandler AZ, US Purushotham Kaushik Muthur Srinath - Chandler AZ, US Deepak Goyal - Phoenix AZ, US
International Classification:
H01L 21/67 G01J 5/00
Abstract:
According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.
Method, Device And System For Non-Destructive Detection Of Defects In A Semiconductor Die
- Santa Clara CA, US Jacob Woolsey - Mesa AZ, US Deepak Goyal - Phoenix AZ, US
International Classification:
G01N 29/22 G01R 31/28 G01N 29/04
Abstract:
According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.
Integrated Cable Probe Design For High Bandwidth Rf Testing
- Santa Clara CA, US Mayue Xie - Phoenix AZ, US Simranjit S. Khalsa - Chandler AZ, US Deepak Goyal - Phoenix AZ, US
International Classification:
G01R 1/067 G01R 31/28
Abstract:
An electrical characterization and fault isolation probe can include a cable, a connector, and a coating over a portion of the cable. The cable can have a first conductor having a first impedance, a second conductor having a second impedance, and a dielectric surrounding the first conductor and electrically isolating the first conductor from the second conductor. The connector can physically couple to, and be in electrical communication with, the cable. The connector can include a first electrical communication pathway and a second electrical communication pathway. The first electrical communication pathway can be electrically isolated from the second electrical communication pathway. The first electrical communication pathway can be in electrical communication with the first conductor. The second electrical communication pathway can be in electrical communication with the second conductor. The connector can have a fifth impedance.
Integrated Heat Spreader (Ihs) With Heating Element
- Santa Clara CA, US Kelly P. Lofgreen - Phoenix AZ, US Manish Dubey - Chandler AZ, US Bamidele Daniel Falola - Chandler AZ, US Ken Hackenberg - Plano TX, US Shenavia S. Howell - Chandler AZ, US Sergio Antonio Chan Arguedas - Chandler AZ, US Yongmei Liu - Chandler AZ, US Deepak Goyal - Phoenix AZ, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 23/34 H01L 23/367 H01L 23/433 H01L 21/48
Abstract:
Embodiments may relate to a microelectronic package that includes a lid coupled with a package substrate such that a die is positioned between the lid and the package substrate. The lid may include a heating element that is to heat an area between the lid and the die. Other embodiments may be described or claimed.
- Santa Clara CA, US Deepak Goyal - Phoenix AZ, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G01R 31/303 G01N 23/04
Abstract:
Embodiments may relate an x-ray filter. The x-ray filter may be configured to be positioned between an x-ray source output and a device under test (DUT) that is to be x-rayed. The x-ray filter may include at least 80% titanium (Ti) by weight. Other embodiments may be described or claimed.
Method Of Sample Preparation Using Dual Ion Beam Trenching
- Santa Clara CA, US Richard Kenneth BREWER - San Tan Valley AZ, US Deepak GOYAL - Phoenix AZ, US
International Classification:
H01L 21/027 H01L 21/265 H01J 37/31
Abstract:
Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.
Medical School Gov't Med Coll, Baba Farid Univ Hlth Sci, Patiala, Punjab, India Graduated: 2001
Description:
Dr. Goyal graduated from the Gov't Med Coll, Baba Farid Univ Hlth Sci, Patiala, Punjab, India in 2001. He works in Glen Ullin, ND and 1 other location and specializes in Internal Medicine. Dr. Goyal is affiliated with Jacobson Memorial Hospital Care Center.