Elizabeth G Pavel from 3982 Teale Ave, San Jose, CA 95117, age 57, Phone: 4086150633

Method And Apparatus For Performing Hydrogen Optical Emission Endpoint Detection For Photoresist Strip And Residue Removal
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US Patent:

20040195208, Oct 7, 2004
Filed:

Feb 11, 2004
Appl. No.:

10/776672
Inventors:

Elizabeth Pavel - San Jose CA, US
Mark Kawaguchi - Mountain View CA, US
James Papanu - San Rafael CA, US
International Classification:

H01L021/306
US Classification:

216/059000, 156/345240
Abstract:

A method for monitoring and detecting a hydrogen optical emission while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate.

Alternating Asymmetrical Plasma Generation In A Process Chamber
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US Patent:

20050241762, Nov 3, 2005
Filed:

Feb 18, 2005
Appl. No.:

11/060980
Inventors:

Alexander Paterson - San Jose CA, US
Elizabeth Pavel - San Jose CA, US
Valentin Todorow - Palo Alto CA, US
Huong Nguyen - San Ramon CA, US
Thomas Kropewnicki - San Mateo CA, US
Brian Hatcher - San Jose CA, US
John Holland - San Jose CA, US
International Classification:

C23F001/00
US Classification:

156345280, 216067000
Abstract:

Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.

Method And Apparatus For Performing Hydrogen Optical Emission Endpoint Detection For Photoresist Strip And Residue Removal
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US Patent:

20060289384, Dec 28, 2006
Filed:

Aug 28, 2006
Appl. No.:

11/467842
Inventors:

Elizabeth Pavel - San Jose CA, US
Mark Kawaguchi - Mountain View CA, US
James Papanu - San Rafael CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

G01L 21/30
C23F 1/00
H01L 21/302
US Classification:

216059000, 216067000, 438725000
Abstract:

Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.

Methods And Apparatus For Stripping
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US Patent:

20070051471, Mar 8, 2007
Filed:

Oct 4, 2002
Appl. No.:

10/264664
Inventors:

Mark Kawaguchi - Mountain View CA, US
Elizabeth Pavel - San Jose CA, US
James Papanu - San Rafael CA, US
Jonathan Mohn - Saratoga CA, US
John Yamartino - Palo Alto CA, US
Christopher Lane - San Jose CA, US
Michael Barnes - San Ramon CA, US
Robert Wunar - Ben Lomond CA, US
International Classification:

C23F 1/00
US Classification:

156345360
Abstract:

One embodiment of the present invention is a stripping reactor that includes: (a) a remote plasma source disposed to output a gas; (b) a gas distribution plate connected to ground that transmits the gas output from the remote plasma source to a processing chamber; (c) a wafer support disposed in the processing chamber; (d) a wafer support assembly disposed about the wafer pedestal that includes an outer conductive peripheral structure connected to ground; and (e) an RF power supply connected to supply RF power to the wafer support.

Alternating Asymmetrical Plasma Generation In A Process Chamber
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US Patent:

20080023443, Jan 31, 2008
Filed:

Jun 20, 2007
Appl. No.:

11/766067
Inventors:

Alexander Paterson - San Jose CA, US
Elizabeth Pavel - San Jose CA, US
Valentin Todorow - Palo Alto CA, US
Huong Nguyen - San Ramon CA, US
Thomas Kropewnicki - San Mateo CA, US
Brian Hatcher - San Jose CA, US
John Holland - San Jose CA, US
International Classification:

C23F 1/00
US Classification:

216067000
Abstract:

Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.