Feng J Gao

US Patent:

6814814, Nov 9, 2004

Filed:

Mar 29, 2002

Appl. No.:

10/109736

Inventors:

Alan W. Collins - San Francisco CA
Feng Gao - Fremont CA
Tetsuya Ishikawa - Santa Clara CA
Padmanaban Krishnaraj - San Francisco CA
Yaxin Wang - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 312

US Classification:

134 1, 134 11, 134 221, 134 22, 134 30, 134 56 R, 134 951, 134166 R, 216 37, 216 67, 216 71, 438714, 438905, 438906

Abstract:

In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.