Feng Gao

US Patent:

20230038157, Feb 9, 2023

Filed:

Oct 5, 2021

Appl. No.:

17/494807

Inventors:

Feng Gao - Chino Hills CA, US

International Classification:

B23K 26/402
B23K 26/70
B23K 26/08
B23K 37/00
B23K 26/361

Abstract:

A laser cleaning system includes a laser cleaning device having a laser rubber-removal assembly having a laser generator, a laser ejector connected with the laser generator, and a position adjustor slidably connected with a loading assembly; and a recycling assembly having a vacuum collector communicated with a recycling processing device; wherein the laser ejector is arranged on the loading assembly through the position adjustor; wherein the laser generator is configured to generate laser beams to remove rubber residues and the position adjustor is configured to adjust locations of the laser ejector; wherein the vacuum collector is configured to collect the rubber residues and the recycling processing device is configured to granulate the collected rubber residues.

US Patent:

20170032846, Feb 2, 2017

Filed:

Aug 26, 2016

Appl. No.:

15/249306

Inventors:

- San Jose CA, US
John W. Cooksey - Brentwood CA, US
Changyuan Chen - Sunnyvale CA, US
Feng Gao - Sunnyvale CA, US
Ya-Fen Lin - Santa Clara CA, US
Dana Lee - Santa Clara CA, US

International Classification:

G11C 16/34
G11C 16/26
G11C 16/14
G11C 16/10
G11C 16/04

Abstract:

A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

US Patent:

20140340967, Nov 20, 2014

Filed:

Jun 27, 2014

Appl. No.:

14/318502

Inventors:

- San Jose CA, US
John W. Cooksey - Brentwood CA, US
Changyuan Chen - Sunnyvale CA, US
Feng Gao - Sunnyvale CA, US
Ya-Fen Lin - Santa Clara CA, US
Dana Lee - Santa Clara CA, US

International Classification:

G11C 16/10
G11C 16/14

US Classification:

36518529, 36518518

Abstract:

A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.