Gang Liu

US Patent:

20110060009, Mar 10, 2011

Filed:

Aug 27, 2010

Appl. No.:

12/870186

Inventors:

Clinton A. BROOKS - Alexandria VA, US
Christine Hiu-Tung CHEN - Waltham MA, US
Young Shin CHO - Cambridge MA, US
Lei JIANG - Shanghai, CN
Gang LIU - Waltham MA, US
Michael SHULTZ - Stow MA, US

International Classification:

A61K 31/4439
C07D 403/06
A61K 31/4045
C07D 401/06
C07D 401/14
A61K 31/4155
A61K 31/4192
A61P 35/00
A61P 25/28
A61P 25/16
A61P 9/00
A61P 19/02
C12N 9/99

US Classification:

514339, 548468, 514414, 548455, 514415, 5462764, 514343, 5462774, 5483641, 514406, 548255, 514359, 435184

Abstract:

The present teachings relate to compounds of Formula I:and pharmaceutically acceptable salts, hydrates, esters, and prodrugs thereof, wherein R, R, R, R, R, ring A, and Z are as defined herein.The present teachings also provide methods of preparing compounds of Formula I and methods of use compounds of Formula I in treating pathologic conditions or disorders mediated wholly or in part by deacetylases.

US Patent:

20180301344, Oct 18, 2018

Filed:

May 22, 2018

Appl. No.:

15/986304

Inventors:

- Urbana IL, US
Kaiyuan Wang - Atlanta GA, US
Chris Edwards - Chandler AZ, US
Lonna Edwards - Louisville KY, US
Xin Yu - Urbana IL, US
Gang Logan Liu - Champaign IL, US
Samuel Washington - Urbana IL, US
Shailendra Srivastava - Urbana IL, US
Terry Koker - Gibson City IL, US
Julianne Lee - Savoy IL, US
Catherine Britt Carlson - Saint Joseph IL, US

International Classification:

H01L 21/306
H01L 31/0236
C25F 3/14
H01L 31/0232
H01L 21/66
G01B 11/24

Abstract:

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

US Patent:

20160118265, Apr 28, 2016

Filed:

Jan 6, 2016

Appl. No.:

14/988895

Inventors:

- Urbana IL, US
Kaiyuan Wang - Atlanta GA, US
Chris Edwards - Chandler AZ, US
Lonna Edwards - Louisville KY, US
Xin Yu - Urbana IL, US
Gang Logan Liu - Champaign IL, US
Samuel Washington - Urbana IL, US
Shailendra Srivastava - Urbana IL, US
Terry Koker - Gibson City IL, US
Julianne Lee - Savoy IL, US
Catherine Britt Carlson - Saint Joseph IL, US

International Classification:

H01L 21/306
H01L 31/0236
H01L 21/768
H01L 31/0232

Abstract:

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. An electrical potential is applied across the interface of the semiconductor and the solution with a specified temporal profile relative to the temporal profile of the spatial pattern of illumination. Such methods are applied to the fabrication of a photodetector integral with a parabolic reflector, cell size sorting chips, a three-dimensional photonic bandgap chip, a photonic integrated circuit, and an integrated photonic microfluidic circuit.