Gang Xu

US Patent:

6801213, Oct 5, 2004

Filed:

Feb 21, 2001

Appl. No.:

09/792041

Inventors:

Neil Bergstrom - Palo Alto CA
Dick Huston - Boulder Creek CA
Gang Xu - Cupertino CA

Assignee:

Brillian Corporation - Tempe AZ

International Classification:

G09G 502

US Classification:

345596, 345591, 345600, 345593, 345597, 345 88, 345102

Abstract:

A system and method are provided for driving a digital display adapted to depict a first number of bits per color field during each frame. In use, a second number of bits is displayed which is greater than the first number of bits. This is accomplished by alternating the display of the bits between frames. To this end, additional bits of color are displayed without increasing the number of bits per color field during each frame.

US Patent:

7369292, May 6, 2008

Filed:

May 3, 2006

Appl. No.:

11/416920

Inventors:

Gang Xu - Cupertino CA, US
Evgeni Gousev - Saratoga CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02F 1/03
G02B 26/00

US Classification:

359245, 359290

Abstract:

A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.

US Patent:

7619822, Nov 17, 2009

Filed:

Jan 30, 2007

Appl. No.:

11/669074

Inventors:

Russell Wayne Gruhike - Santa Clara CA, US
Mark Mienko - San Jose CA, US
Gang Xu - Cupertino CA, US
Ion Bita - San Jose CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02B 5/02
F21V 7/04
G02B 26/00

US Classification:

359599, 362600, 362603, 362609, 362610, 359291

Abstract:

Various embodiments of the invention include an interferometric optical modulator comprising a substrate layer and a light direction layer. Such an interferometric modulator may be integrated with a diffuser layer in a display device in a way that physically integrates the diffuser layer into the light direction layer in a way where the diff-user layer does not interact with light propagating within the light direction layer. As a result, most of the light propagating within the light direction layer does not penetrate into the diffuser which would inhibit performance of the display. In some embodiments, the interface between the diffuser layer and the light direction layer has a lower index of refraction than the light direction layer and the transparent substrate so that total internal reflection occurs at the interface.

US Patent:

7643203, Jan 5, 2010

Filed:

Apr 10, 2006

Appl. No.:

11/401023

Inventors:

Evgeni Gousev - Saratoga CA, US
Gang Xu - Cupertino CA, US
Marek Mienko - San Jose CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02B 26/00
G02B 26/08
G02F 1/29

US Classification:

359291, 359292, 359298

Abstract:

Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.

US Patent:

7684107, Mar 23, 2010

Filed:

Oct 6, 2006

Appl. No.:

11/544978

Inventors:

Gang Xu - Cupertino CA, US
Alan Lewis - Sunnyvale CA, US
Brian Gally - Los Gatos CA, US
Mark Mienko - San Jose CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02B 26/00
G02F 1/29

US Classification:

359296, 359290, 359318

Abstract:

An optical isolation structure is incorporated into a display between the display elements and the transparent substrate for the display elements. The optical isolation structure reflects light rays within the substrate that impact the structure at high angles relative to normal to the structure, thereby permitting the substrate to be used as an integrated light guide for distributing light over the display from a light source on the edge of the substrate. The optical isolation structure may include a single layer having an index of refraction less than the substrate or a plurality of thin-film interference layers.

US Patent:

7688494, Mar 30, 2010

Filed:

May 5, 2008

Appl. No.:

12/115395

Inventors:

Gang Xu - Cupertino CA, US
Evgeni Gousev - Saratoga CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02F 1/03
G02B 26/00

US Classification:

359245, 359290

Abstract:

A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.

US Patent:

7777954, Aug 17, 2010

Filed:

Jan 30, 2007

Appl. No.:

11/669074

Inventors:

Russell Wayne Gruhike - Santa Clara CA, US
Mark Mienko - San Jose CA, US
Gang Xu - Cupertino CA, US
Ion Bita - San Jose CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02B 5/02
F21V 7/04
G02B 26/00

US Classification:

359599, 362600, 362603, 362609, 362610, 359291

Abstract:

Various embodiments of the invention include an interferometric optical modulator comprising a substrate layer and a light direction layer. Such an interferometric modulator may be integrated with a diffuser layer in a display device in a way that physically integrates the diffuser layer into the light direction layer in a way where the diff-user layer does not interact with light propagating within the light direction layer. As a result, most of the light propagating within the light direction layer does not penetrate into the diffuser which would inhibit performance of the display. In some embodiments, the interface between the diffuser layer and the light direction layer has a lower index of refraction than the light direction layer and the transparent substrate so that total internal reflection occurs at the interface.

US Patent:

7855827, Dec 21, 2010

Filed:

Oct 6, 2006

Appl. No.:

11/544978

Inventors:

Gang Xu - Cupertino CA, US
Alan Lewis - Sunnyvale CA, US
Brian Gally - Los Gatos CA, US
Mark Mienko - San Jose CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02B 26/00
G02F 1/29

US Classification:

359296, 359290, 359318

Abstract:

An optical isolation structure is incorporated into a display between the display elements and the transparent substrate for the display elements. The optical isolation structure reflects light rays within the substrate that impact the structure at high angles relative to normal to the structure, thereby permitting the substrate to be used as an integrated light guide for distributing light over the display from a light source on the edge of the substrate. The optical isolation structure may include a single layer having an index of refraction less than the substrate or a plurality of thin-film interference layers.