Gary H Kroll

US Patent:

54512956, Sep 19, 1995

Filed:

Apr 12, 1994

Appl. No.:

8/226567

Inventors:

Gary H. Kroll - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

B44C 122
C03C 1500

US Classification:

216 52

Abstract:

A method for removing film from a substrate, and more particularly, photoresist from a semiconductor wafer, by a shear stress process. A wafer is coated with a medium having coefficients of thermal expansion and elasticity, such as water, and then cooled. The cooling causes shear stress to occur between the photoresist and the wafer, thereby loosening the photoresist from the wafer. The wafer is then heated to remove the medium and photoresist from the wafer. The coating, cooling and heating steps are repeated until all of the photoresist is removed. Relative to the prior art, this invention provides a novel process for removing film from a substrate that minimizes expense; substantially cuts processing time; is less complex; less hazardous; and environmentally favorable.