Gregory G Wilson

US Patent:

6565729, May 20, 2003

Filed:

Dec 7, 2000

Appl. No.:

09/732513

Inventors:

Linlin Chen - Plano TX
Gregory J. Wilson - Kalispell MT
Paul R. McHugh - Kalispell MT
Robert A. Weaver - Whitefish MT
Thomas L. Ritzdorf - Big Fork MT

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C25D 2112

US Classification:

205 82, 205 96, 205 97, 205123, 205133, 204DIG 7, 42725518, 42725522, 4274301, 4274431, 438758

Abstract:

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

US Patent:

7115196, Oct 3, 2006

Filed:

Feb 27, 2003

Appl. No.:

10/377397

Inventors:

Linlin Chen - Plano TX, US
Gregory J. Wilson - Kalispell MT, US
Paul R. McHugh - Kalispell MT, US
Robert A. Weaver - Whitefish MT, US
Thomas L. Ritzdorf - Big Fork MT, US

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C25D 7/12
C25D 5/10

US Classification:

205 82, 205115, 205 96, 205182, 205170

Abstract:

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

US Patent:

7332066, Feb 19, 2008

Filed:

Feb 7, 2005

Appl. No.:

11/053050

Inventors:

Linlin Chen - Plano TX, US
Gregory J. Wilson - Kalispell MT, US
Paul R. McHugh - Kalispell MT, US
Robert A. Weaver - Whitefish MT, US
Thomas L. Ritzdorf - Big Fork MT, US

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C25D 7/12
C25D 17/00
C25D 17/12

US Classification:

205 96, 205148, 205157

Abstract:

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

US Patent:

20100116671, May 13, 2010

Filed:

Oct 3, 2006

Appl. No.:

11/543270

Inventors:

Linlin Chen - Plano TX, US
Gregory J. Wilson - Kalispell MT, US
Paul R. McHugh - Kalispell MT, US
Robert A. Weaver - Kalispell MT, US
Thomas L. Ritzdorf - Bigfork MT, US

Assignee:

Semitool, Inc. - Kalispell MT

International Classification:

C25D 21/12

US Classification:

205 83

Abstract:

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.