James J Liu

US Patent:

6644615, Nov 11, 2003

Filed:

Jul 3, 2002

Appl. No.:

10/189863

Inventors:

James Liu - Fullerton CA

Assignee:

Larin Corporation - Ontario

International Classification:

B66F 300

US Classification:

248352, 24834607, 254DIG 1

Abstract:

A stabilized jack stand for a vehicle comprises a vertically directed leg for location on a foot, and an extendable portion for supporting a vehicle chassis, the leg defining a peripheral area relative to the foot plate. An engagement element releasably secures the foot to the leg, and the foot extends to an area beyond the periphery area of the leg. The leg a side profile extends from a wider portion adjacent to the foot to a narrower portion towards the extendable portion of the jack stand, and the leg has a cross-sectional profile including at least two inter-engaging walls and the engagement element being for interfacing with the two walls.

US Patent:

D573886, Jul 29, 2008

Filed:

Jun 17, 2005

Appl. No.:

29/232361

Inventors:

James Liu - Malibu CA, US
Barry Debake - Malibu CA, US
Peter Wachtel - Malibu CA, US

Assignee:

JAKKS Pacific, Inc. - Malibu CA

International Classification:

0901

US Classification:

D 9529, D9522, D9537, D9539

US Patent:

D4332075, Oct 31, 2000

Filed:

Nov 1, 1999

Appl. No.:

D/113215

Inventors:

James Liu - Fontana CA

Assignee:

Larin Corporation - Ontario CA

International Classification:

1205

US Classification:

D34 31

US Patent:

44015054, Aug 30, 1983

Filed:

Mar 31, 1982

Appl. No.:

6/364092

Inventors:

James K. Liu - Glendale CA
Guenter H. Schwuttke - Poughkeepsie NY
Krishna M. Koliwad - La Canada CA

Assignee:

The United States of America as represented by the Administrator
National Aeronautics and Space Administration - Washington DC

International Classification:

C30B 1534
C30B 2906
C30B 3300

US Classification:

156608

Abstract:

A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers are achieved by processing the web in an atmosphere of a selected gas, e. g. oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900. degree. C. -1200. degree. C.