James C Mitchener

US Patent:

6669995, Dec 30, 2003

Filed:

Oct 12, 1994

Appl. No.:

08/321672

Inventors:

Linda Insalaco - Poolesville MD 20837
James Mitchener - Damascus MD 20872

International Classification:

B05D 306

US Classification:

427558, 20415715, 437228

Abstract:

A method of treating an anti-reflective coating on a substrate. The method includes exposing the anti-reflective coating to a dosage of ultraviolet radiation sufficient to result in the direct removal of at least a portion of the exposed anti-reflective coating.

US Patent:

20030049372, Mar 13, 2003

Filed:

Aug 9, 2002

Appl. No.:

10/216079

Inventors:

Robert Cook - Pleasanton CA, US
Daniel Brors - Byron CA, US
James Mitchener - Danville CA, US
Gabe Ormonde - Lathrop CA, US

International Classification:

C23C016/00

US Classification:

427/248100, 118/724000, 118/715000

Abstract:

A chemical vapor deposition reactor including a wafer boat with a vertical stack of horizontally oriented susceptors serving as thermal plates and each having pins extending upward for suspending a wafer between a pair of susceptors. Reactant gas injector and exhaust apparatus are positioned to concentrate a forceful supply of reactant gas across each wafer at a speed in excess of 10 cm/sec. The pressure is held in the range of 0.1 to 5,000 mTorr. The forceful gas flow avoids gas depletion effects, thinning the boundary layer and resulting in faster delivery of reactants to substrate surfaces, resulting in surface rate reaction limited operation. A plurality of individually controllable heaters are spaced vertically around the sides of the boat. Temperature sensors monitor the temperature along the boat height and provide input to a controller for adjusting the heater drive to optimize the temperature uniformity.

US Patent:

20120231182, Sep 13, 2012

Filed:

Mar 10, 2012

Appl. No.:

13/417226

Inventors:

Ronald Stevens - San Ramon CA, US
Gabriel Ormonde - Lathrop CA, US
James Mitchener - Danville CA, US

Assignee:

KAIATECH, INC. - Danville CA

International Classification:

C23C 16/50
C23C 16/24
A61L 2/14
C23C 16/06

US Classification:

427576, 427569, 427579, 118723 E, 422186, 422 22

Abstract:

An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

US Patent:

62840509, Sep 4, 2001

Filed:

May 18, 1998

Appl. No.:

9/080905

Inventors:

Jianou Shi - Milpitas CA
James C. Mitchener - Danville CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C 1600

US Classification:

118715

Abstract:

An ultraviolet-assisted chemical vapor deposition system for improving the adhesion, hardness, and thermal stability of organic polymer films deposited on semiconductor wafers is provided. The system includes an ultraviolet lamp and a tube-shaped monomer distribution system positioned over the wafer allowing ultraviolet irradiation of the wafer before, during and/or after deposition. Processes for depositing organic polymer films on semiconductor wafers are also provided. The processes include one or more depositions, one or more ultraviolet exposures, and one or more anneals.

US Patent:

48450545, Jul 4, 1989

Filed:

Jun 29, 1987

Appl. No.:

7/068727

Inventors:

James C. Mitchener - Mountain View CA

Assignee:

Focus Semiconductor Systems, Inc. - Sunnyvale CA

International Classification:

H01L 21316

US Classification:

437238

Abstract:

A method for low temperature chemical vapor deposition of an SiO. sub. 2 based film on a semiconductor structure using selected alkoxysilanes, in particular tetramethoxysilane, trimethoxysilane and triethoxysilane which decompose pyrolytically at lower temperatures than TEOS (tetraethoxysilanes). Ozone is introduced into the reaction chamber to increase deposition rates, lower reaction temperatures and provide a better quality SiO. sub. 2 film by generating a more complete oxidation. Ozone is also employed as a reactant for doping SiO. sub. 2 based films with oxides of phosphorus and boron.

US Patent:

20210121590, Apr 29, 2021

Filed:

Dec 31, 2020

Appl. No.:

17/139036

Inventors:

- Fremont CA, US
Ronald Stevens - Pleasanton CA, US
Kenneth Twain - Oakland CA, US
Craig Galloway - Hillsborough NC, US
Michelle (Meng) Shi - San Jose CA, US
James Mitchener - Danville CA, US

International Classification:

A61L 2/14
C23C 16/50
C23C 16/44
C23C 16/455
B08B 7/00
B08B 9/20
A61L 2/26
H01J 37/32

Abstract:

The invention provides an apparatus for treating surfaces of a container. The apparatus comprises an openable reaction chamber housing, an exhaust escapement and an electrode assembly. The electrode assembly comprises a probe assembly coupled with a power source, the probe assembly comprising an elongate wand body, and a helically configured primary electrode and a helically configured counter electrode disposed about an outer circumferential surface of the wand body in an alternating helical configuration. The elongate wand body has a fluid passageway defined therewithin, and one or more outlet openings that are formed on an outer circumferential surface of the wand body and that extend inward through said outer circumferential surface and upto the fluid passageway. One or both of the primary electrode and the counter electrode may be energizable by the power source.