Jason J Park

US Patent:

20190181004, Jun 13, 2019

Filed:

Nov 16, 2018

Appl. No.:

16/194102

Inventors:

- Fremont CA, US
Jason Daejin Park - Lake Oswego OR, US
Bart J. van Schravendijk - Palo Alto CA, US
Shu Tsai Wang - Dublin CA, US
Kaihan Abidi Ashtiani - Cupertino CA, US

International Classification:

H01L 21/02
C23C 16/32
C23C 16/26
C23C 16/04
H01L 21/762
H01L 21/768

Abstract:

Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus.

US Patent:

20190043876, Feb 7, 2019

Filed:

Aug 1, 2018

Appl. No.:

16/052401

Inventors:

- Fremont CA, US
Awnish Gupta - Hillsboro OR, US
Patrick A. van Cleemput - West Linn OR, US
Jason Daejin Park - Lake Oswego OR, US

International Classification:

H01L 27/11556
H01L 27/11582
G11C 16/04

Abstract:

Methods and apparatuses for selectively depositing silicon nitride (SiN) via high-density plasma chemical vapor deposition (HDP CVD) to form a SiN pad on an exposed flat surface of a nitride layer in a 3D NAND staircase structure with alternating oxide and nitride layers are provided. In some embodiments, selective etching is performed to remove undesirable buildup of SiN on sidewalls of the oxide layers of the staircase structure. Nitride layers of the staircase structure are replaced with tungsten (W) to form tungsten wordlines, while the SiN pads are replaced with tungsten to from landing pads, which prevent punchthrough of the tungsten wordlines on the staircase structure by interconnects extending thereto.