Julia Hsu

US Patent:

7229847, Jun 12, 2007

Filed:

Dec 2, 2002

Appl. No.:

10/307642

Inventors:

Julia Wan-Ping Hsu - Berkeley Heights NJ, US
Yueh-Lin Loo - Princeton NJ, US
John A. Rogers - New Providence NJ, US

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 51/40
H01L 21/00
H01L 21/84

US Classification:

438 99, 438149, 438738, 438151, 438 48, 438578, 257E5104, 257E51005, 257E51046

Abstract:

The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.

US Patent:

20030235921, Dec 25, 2003

Filed:

Jun 24, 2002

Appl. No.:

10/178471

Inventors:

Julia Hsu - Berkeley Heights NJ, US
Yueh-Lin Loo - Princeton NJ, US
John Rogers - New Providence NJ, US

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

G01N027/00

US Classification:

436/149000, 436/179000, 436/120000, 436/080000, 436/084000, 422/082010

Abstract:

The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.

US Patent:

20030235970, Dec 25, 2003

Filed:

Jun 25, 2002

Appl. No.:

10/179806

Inventors:

Julia Hsu - Berkeley Heights NJ, US
Michael Manfra - Clinton NJ, US
Nils Weimann - Chatham NJ, US

International Classification:

H01L021/336
C30B001/00
H01L021/20

US Classification:

438/478000, 438/507000

Abstract:

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects. Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.

US Patent:

20070142619, Jun 21, 2007

Filed:

Feb 21, 2007

Appl. No.:

11/677403

Inventors:

Julia Hsu - Berkeley Heights NJ, US
Yueh-Lin Loo - Princeton NJ, US
John Rogers - New Providence NJ, US

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

C08G 79/00

US Classification:

528395000

Abstract:

The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.