Julien L Borghetti

US Patent:

8274813, Sep 25, 2012

Filed:

Jul 16, 2010

Appl. No.:

12/837903

Inventors:

Matthew D. Pickett - San Francisco CA, US
Julien Borghetti - Mountain View CA, US
Gilberto Medeiros Ribeiro - Menlo Park CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 11/00

US Classification:

365148, 365100, 365129, 257 4, 257 5, 977754

Abstract:

A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.

US Patent:

8324976, Dec 4, 2012

Filed:

Apr 1, 2011

Appl. No.:

13/078595

Inventors:

Julien Borghetti - Mountain View CA, US
Matthew D Pickett - San Francisco CA, US
Gilberto Medeiros Ribeiro - Palo Alto CA, US
Wei Yi - Mountain View CA, US
Jianhua Yang - Palo Alto CA, US
Minxian Max Zhang - Mountain View CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H03B 7/00

US Classification:

331107R, 331132

Abstract:

Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.

US Patent:

8384401, Feb 26, 2013

Filed:

Mar 31, 2010

Appl. No.:

12/751739

Inventors:

Kai-Mei Fu - Palo Alto CA, US
John Paul Strachan - Millbrae CA, US
Raymond Beausoleil - Redmond WA, US
Julien Borghetti - Mountain View CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G01R 27/08

US Classification:

324691, 324702

Abstract:

A system for event detection uses a resistive switching device to record a detected event. The resistive switching device has a resistance adjustable by an applied voltage. The operation of the resistive switching device is controlled by a controller, which is configured to apply a switching voltage to the resistive switching device at a start time, and turn off the switching voltage in response to an event signal indicative of occurrence of an event. The resistance value of the resistive switching device resulting from the application of the switching voltage is indicative of the detection of the event and also the time of the occurrence of the event.

US Patent:

8431921, Apr 30, 2013

Filed:

Jan 13, 2009

Appl. No.:

13/130827

Inventors:

Matthew D. Pickett - San Francisco CA, US
Julien Borghetti - Mountain View CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 29/02

US Classification:

257 4, 257 2, 257 3, 257E29002, 438102, 438103, 438104, 365163

Abstract:

A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode.

US Patent:

8451644, May 28, 2013

Filed:

Jun 29, 2010

Appl. No.:

12/825607

Inventors:

Julien Borghetti - Mountain View CA, US
David A. Fattal - Mountain View CA, US
John Paul Strachan - Millbrae CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 11/00
H01L 21/82

US Classification:

365148, 365207, 36518907, 438129

Abstract:

A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied.

US Patent:

8502188, Aug 6, 2013

Filed:

Jun 28, 2011

Appl. No.:

13/142504

Inventors:

Matthew D. Pickett - San Francisco CA, US
Hans S. Cho - Palo Alto CA, US
Julien Borghetti - Mountain View CA, US
Duncan Stewart - Menlo Park CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 29/02

US Classification:

257 5, 257 2, 257 3, 257 4, 257E29002, 438102, 438103, 438104

Abstract:

An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.

US Patent:

8547727, Oct 1, 2013

Filed:

Dec 12, 2008

Appl. No.:

13/119932

Inventors:

Wei Wu - Palo Alto CA, US
John Paul Strachan - Stanford CA, US
R. Stanley Williams - Portola Valley CA, US
Marco Florentino - Mountain View CA, US
Shih-Yuan Wang - Palo Alto CA, US
Nathaniel J. Quitoriano - Pacifica CA, US
Hans S. Cho - Palo Alto CA, US
Julien Borghetti - Mountain View CA, US
Sagi Varghese Mathai - Palo Alto CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 11/00

US Classification:

365148

Abstract:

A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.

US Patent:

8605484, Dec 10, 2013

Filed:

Jan 29, 2009

Appl. No.:

13/130822

Inventors:

Julien Borghetti - Mountain View CA, US
Alexandre M Bratkovski - Mountain View CA, US
Matthew D Pickett - San Francisco CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 11/00

US Classification:

365148, 365200, 365201

Abstract:

A self-repairing memristor and methods of operating a memristor, and repairing a memristor, employ thermal annealing. The thermal annealing removes a short circuit in an oxide layer, of the memristor. Thermal annealing includes heating the memristor, to a predetermined annealing temperature for a predetermined annealing time period. The memristor, returns to an electrically open circuit condition after the short circuit is removed.