Plan Administrator / CoordinatorG.A.L. Manufacturing Corporation Bronx, NY Jan 2010 to Dec 2010 Assistant Door Equipment EngineerG.A.L. Manufacturing Corporation Bronx, NY Apr 2009 to Jan 2010 Assistant Engineering Drawing CoordinatorNew York City College of Technology (City Tech) Brooklyn, NY Jan 2006 to Aug 2006 College Assistant (Media Services Department)
Education:
New York City College of Technology (City Tech) Brooklyn, NY 2011 to 2012 Bachelor of Technology in Mechanical Engineering Technology
Skills:
Autodesk Inventor 11, AutoCAD 2009, Adobe Photoshop, MS Word 2010, Excel 2010, Access 2010 and PowerPoint 2010, Labview 2009, Solid Work 2008, Matlab, Pro-Engineering, Maya 2008, i-Photo, Apple Pages and Keynote
Ken K. Chin - Pine Brook NJ Haijiang Ou - Harrison NJ
Assignee:
CF Technologies, Inc. - Pine Brook NJ
International Classification:
G02F 101
US Classification:
250330, 250334, 341162
Abstract:
In the present invention of Correlated Modulation Imaging (CMI), the weak optical image signal (and therefore the signal current) is modulated, and the signal integration direction is correlated to the modulation. Therefore, the dark and/or background current, which are not modulated, are cancelled, while the signal current is integrated. As a result, the total integration time of the signal of each pixel is increased, and its signal to noise ratio and dynamic range are improved. Besides, the CMI noise spectrum peaks at the modulation frequency, and therefore, the detectors 1/f and other low frequency noises can be suppressed. In the present invention, the method and theory of CMI, as well as the means and steps for the realization of CMI, are explicitly developed. Two versions of CMOS devices (CMI unit pre-amplifier version 1 and 3), with their circuitry design and testing data are presented as the critical component for correlated modulation imaging. A prototype chip of the CMI circuitries has been fabricated by the MOSIS 0.
Ken K. Chin - Pine Brook NJ, US Guanhua Feng - Dover NJ, US Harry Roman - East Orange NJ, US
Assignee:
New Jersey Institute of Technology - Newark NJ
International Classification:
G01B 9/02
US Classification:
356480
Abstract:
The theory, design, fabrication, and characterization of MEMS (micro electrical mechanical system) Fabry-Perot diaphragm-fiber optic microphone are described in the present invention. By using MEMS technology in processing and packaging, a square 1. 9 mm×1. 9 mm, 2 μ thick SiOdiaphragm with a 350 μ square embossed center of silicon is mechanically clamped to the ferrule of a single mode fiber to keep its closeness (5 μ) and perpendicular orientation with respect to the diaphragm. Static measurement of optical output power versus the pressure on membrane reveals more than one period of Fabry-Perot interference, thereby generating a Fabry-Perot diaphragm-fiber interferometer device accurately reproducing audible acoustic wave.
Aligned Embossed Diaphragm Based Fiber Optic Sensor
The present invention is a diaphragm-fiber optic sensor (DFOS), interferometric sensor. This DFOS is based on the principles of Fabry-Perot and Michelson/Mach-Zehnder. The sensor is low cost and is designed with high efficiency, reliability, and Q-point stability, fabricated using MEMS (micro mechanic-electrical system) technology, and has demonstrated excellent performance. A DFOS according to the invention includes a cavity between two surfaces: a diaphragm made of silicon or other material with a rigid body (or boss) at the center and clamped along its edge, and the endface of a single mode optic fiber. By utilizing MEMS technology, the gap width between the diaphragm and the fiber endface is made accurately, ranging from 1 micron to 10 microns. To stabilize the Q-point of the DFOS when in use as an acoustic sensor, a system of microchannels is built in the structure of the diaphragm so that the pressure difference on two sides of the diaphragm is kept a constant, independent of the hydraulic pressure and/or low frequency noise when the device is inserted in liquid mediums.
Multicycle Integration Focal Plane Array (Mifpa) For Lock-In (Li-), Gated (G-), And Gated Lock-In (Gli-) Imaging, Spectroscopy And Spectroscopic Imaging
Ken Chin - Pine Brook NJ, US Haijiang Ou - Edison NJ, US
International Classification:
H01L025/00
US Classification:
250/370080
Abstract:
The present invention comprises the principle, theory, circuit design, computer simulation, and experimental demonstration of a new type of electronic device—the multi-cycle integration focal plane array (MIFPA)—for lock-in and/or gated imaging, spectroscopy, and/or spectroscopic imaging of extremely weak signals buried in strong background. Particularly, the MIFPA can operate in three modes—the lock-in (LI), gated (G), and gated lock-in (GLI) modes. Particularly, one MIFPA circuitry was demonstrated by simulation and experiment. Particularly, the circuitry was capable to perform the LI-, G-, and GLI-modes.
Multicycle Integration Focal Plane Array (Mifpa) For Lock-In (Li-), Gated (G-), And Gated Lock-In (Gli-) Imaging, Spectroscopy And Spectroscopic Imaging
Ken Chin - Pine Brook NJ, US Haijiang Ou - Endicott NY, US
International Classification:
H01L 27/14
US Classification:
250370080
Abstract:
A new electronic apparatus multicycle integration focal plane array (MIFPA) is disclosed, wherein by using correlated multicycle integrators (CMI, U.S. Pat. No. 6,630,669) extremely weak signals buried in strong background can be detected for imaging, spectroscopy, and/or spectroscopic imaging applications. The MIFPA apparatus can operate in three modes—the lock-in (LI), gated (G), and gated lock-in (GLI) modes. The methods of operating LI-MIFPA, G-MIFPA, and GLI-MIFPAP modes comprising specific steps are also disclosed.
Aligned Embossed Diaphragm Based Fiber Optic Sensor
Ken Chin - Pine Brook NJ, US Guanhua Feng - Dover NJ, US Ivan Padron - Carteret NJ, US Harry Roman - East Orange NJ, US
Assignee:
New Jersey Institute of Technology - Newark NJ
International Classification:
G02B 6/00 G01B 9/02
US Classification:
385012000, 356519000
Abstract:
The present invention is a diaphragm-fiber optic sensor (DFOS), interferometric sensor. This DFOS is based on the principles of Fabry-Perot and Michelson/Mach-Zehnder. The sensor is low cost and is designed with high efficiency, reliability, and Q-point stability, fabricated using MEMS (micro mechanic-electrical system) technology, and has demonstrated excellent performance. A DFOS according to the invention includes a cavity between two surfaces: a diaphragm made of silicon or other material with a rigid body (or boss) at the center and clamped along its edge, and the endface of a single mode optic fiber. By utilizing MEMS technology, the gap width between the diaphragm and the fiber endface is made accurately, ranging from 1 micron to 10 microns. To stabilize the Q-point of the DFOS when in use as an acoustic sensor, a system of microchannels is built in the structure of the diaphragm so that the pressure difference on two sides of the diaphragm is kept a constant, independent of the hydraulic pressure and/or low frequency noise when the device is inserted in liquid mediums.
George E. Georgiou - Gillette NJ, US Ken K. Chin - Pine Brook NJ, US Raymond Ferraro - Howell NJ, US Guanhua Feng - Dover NJ, US Karen Gail Noe - Wall Township NJ, US
International Classification:
G01R 19/32
US Classification:
324105
Abstract:
A system and method in which an overhead high voltage transmission line sensor system is able to measure one or more of temperature, current, and line sag for a conductor within a high voltage transmission line system. The sensor system may be able to clamp to a transmission conductor or splice, harvest power from the transmission line, and/or transmit data corresponding to measurements of current, temperature, and line sag.
P-Doping Of Cdte Polycrystalline Thin Film Based On Cd Vacancy Theory
Exemplary embodiments of the present disclosure are directed to improve p-type doping (p-doping) of cadmium telluride (CdTe) for CdTe-based solar cells, such as cadmium Sulfide (Cds)/CdTe solar cells. Embodiments can achieve improved p-doping of CdTe by creating a high density of cadmium (Cd) vacancies (V) and subsequently substituting a high density of substitutional defects and/or defect complexes for the Cd vacancies that were created. Formation of a high density of substitutional defects and defect complexes as a p-dopant can improve light-to-electricity conversion efficiency, doping levels or hole concentrations, junction band bending, and/or ohmic contact associated with p-type CdTe (p-CdTe) based solar cells.
The Running Institute - Practice Manager & Marketing Director (2009)
Education:
DePaul University - MM, DePaul University - BM
Relationship:
In_a_relationship
About:
I'm a tall Asian with a Jersey accent living in the awesome city of Chicago! I LOVE my gig at The Running Institute and how it and the Chicago Running Community has fed my soul since 2007! AND, y...
Tagline:
Http://daRevoluCHIN.com
Bragging Rights:
...from the couch in 2007 to 7 marathons under my belt by 2011! life is good! =) oh yeah...can you believe that i was a professionally trained classical clarinetist that has played in Carnegie Hall 6 times?