Lin H Xu

US Patent:

20150187615, Jul 2, 2015

Filed:

Dec 22, 2014

Appl. No.:

14/578979

Inventors:

- Fremont CA, US
Hong Shih - Walnut CA, US
Anthony Amadio - San Mateo CA, US
Tom Stevenson - Morgan Hill CA, US
Lin Xu - Katy TX, US
John Michael Kerns - Livermore CA, US
Robert Griffith O'Neill - Hayward CA, US
Sonia Castillo - Hayward CA, US

International Classification:

H01L 21/67
H01L 21/02
C25D 11/02
H01L 21/3065
C23C 24/04
C23C 22/73

Abstract:

A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

US Patent:

20140272459, Sep 18, 2014

Filed:

Mar 12, 2013

Appl. No.:

13/796751

Inventors:

- Fremont CA, US
Hong Shih - Walnut CA, US
Lin Xu - Katy TX, US
Anthony Amadio - Mountain View CA, US
Robert G. O'Neill - Fremont CA, US
Peter Holland - Pleasanton CA, US
Sivakami Ramanathan - Fremont CA, US
Tae Won Kim - Dublin CA, US
Duane Outka - Fremont CA, US
John Michael Kerns - Livermore CA, US
Sonia Castillo - Hayward CA, US

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

H01J 37/32
H01L 21/3065
H01L 21/02
C22C 21/00
C23C 4/12

US Classification:

428654, 428457, 4284722, 428332, 428141, 428 666, 428213, 428215, 134 12, 205190, 420530, 427456, 438758, 438710

Abstract:

Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.