Lin J Xu

US Patent:

7744720, Jun 29, 2010

Filed:

Dec 6, 2007

Appl. No.:

11/951861

Inventors:

Lee Chen - Cedar Creek TX, US
Lin Xu - Houston TX, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 21/3065
C23C 16/455
C23C 16/505
B21K 21/08

US Classification:

15634534, 15634533, 118715, 118723, 29890142

Abstract:

A chamber component configured to be coupled to a process chamber and a method of fabricating the chamber component is described. The chamber component comprises a chamber element comprising a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the chamber element comprises a reentrant cavity formed in the first surface and a conduit having an inlet coupled to the reentrant cavity and an outlet coupled to the second surface. Furthermore, the chamber component comprises an insertable member configured to couple with the reentrant cavity, the insertable member having one or more passages formed there through and each of the one or more passages are aligned off-axis from the conduit, wherein the one or more passages are configured to receive a process fluid on the supply side and the conduit is configured to distribute the process fluid from the one or more passages on the process side.

US Patent:

7777179, Aug 17, 2010

Filed:

Mar 31, 2008

Appl. No.:

12/059983

Inventors:

Lee Chen - Cedar Creek TX, US
Lin Xu - Houston TX, US
Ronald Victor Bravenec - Austin TX, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01J 37/04
H01J 49/00
H01J 3/26

US Classification:

250281, 250282, 250397, 324466

Abstract:

An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an electron rejection grid disposed proximate to the entrance grid, and an ion current collector disposed proximate to the electron rejection grid. The ion current collector is coupled to an ion selection voltage source configured to positively bias the ion current collector by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.

US Patent:

7875859, Jan 25, 2011

Filed:

Mar 31, 2008

Appl. No.:

12/059855

Inventors:

Lee Chen - Cedar Creek TX, US
Lin Xu - Houston TX, US
Ronald Victor Bravenec - Austin TX, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G01K 1/08

US Classification:

250397, 250396 R

Abstract:

An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an ion selection grid disposed proximate to the entrance grid, an electron rejection grid disposed proximate to the ion selection grid, and an ion current collector disposed proximate to the electron rejection grid. The ion selection grid is coupled to an ion selection voltage source configured to positively bias the ion selection grid by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.

US Patent:

7883839, Feb 8, 2011

Filed:

Dec 4, 2006

Appl. No.:

11/633233

Inventors:

Vincent M Donnelly - Houston TX, US
Demetre J. Economou - Houston TX, US
Paul Ruchhoeft - Houston TX, US
Lin Xu - Houston TX, US
Sri Charan Vemula - Leuven, BE
Manish Kumar Jain - Houston TX, US

Assignee:

University of Houston - Houston TX

International Classification:

G21K 1/08
C03C 25/60

US Classification:

430323, 250396 R, 25049221, 250309, 25049222, 216 66, 216 67

Abstract:

A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e. g. , a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.

US Patent:

8030620, Oct 4, 2011

Filed:

May 5, 2009

Appl. No.:

12/435545

Inventors:

Vincent M. Donnelly - Houston TX, US
Demetre J. Economou - Houston TX, US
Paul Ruchhoeft - Houston TX, US
Lin Xu - Houston TX, US
Sri Charan Vemula - Leuven, BE
Manish Kumar Jain - Houston TX, US

Assignee:

University of Houston - Houston TX

International Classification:

H01J 3/26
G21K 1/08

US Classification:

250396R, 25049221, 250309, 25049222, 216 66, 216 67, 430323, 118640

Abstract:

A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e. g. , a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.

US Patent:

8409459, Apr 2, 2013

Filed:

Feb 28, 2008

Appl. No.:

12/039236

Inventors:

Kazuki Denpoh - Kai, JP
Peter L G Ventzek - Austin TX, US
Lin Xu - Houston TX, US
Lee Chen - Cedar Creek TX, US

Assignee:

Tokyo Electron Limited

International Classification:

H01L 21/306

US Classification:

216 67, 204164, 15634533, 15634534

Abstract:

A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

US Patent:

20130228284, Sep 5, 2013

Filed:

Apr 1, 2013

Appl. No.:

13/854910

Inventors:

- Tokyo, JP
Peter LG Ventzek - Austin TX, US
Lin Xu - Houston TX, US
Lee Chen - Cedar Creek TX, US

Assignee:

TOKYO ELECTRON LIMITED - TOKYO

International Classification:

H01L 21/02
H01J 31/00

US Classification:

15634529, 15634535

Abstract:

A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

US Patent:

20150337450, Nov 26, 2015

Filed:

Aug 4, 2015

Appl. No.:

14/817742

Inventors:

- Fremont CA, US
Lin XU - Katy TX, US
John Michael KERNS - Livermore CA, US
William CHARLES - Los Altos CA, US
John DAUGHERTY - Fremont CA, US
Sivakami RAMANATHAN - Fremont CA, US
Russell ORMOND - San Jose CA, US
Robert G. O'NEILL - Fremont CA, US
Tom STEVENSON - Morgan Hill CA, US

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

C25D 11/02
H01L 21/67
C23C 28/00
C23C 24/00
C25D 11/16
C25D 11/12

Abstract:

A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.